Page 1
FJV42
NPN High Voltage Transistor
3
1. Base 2. Emitter 3. Collector
SOT-23
1
Marking: 1DF
FJV42 NPN High Voltage Transistor
March 2007
2
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
Collector Current 500 mA
C
T
STG
P
C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Collector-Base Voltage 350 V
Collector-Emitter Vo ltage 350 V
Emitter-Base Voltage 6 V
Storage Temperature Range -55~150 °C
Collector Power Dissipation 350 mW
Thermal Characteristics
Symbol Parameter Value Units
RTH(j-a)
Electrical Characteristics T
Symbol Parameter Test Condition MIN MAX Units
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 5.0 mA, IB = 0 350 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100 uA, IE = 0 350 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 uA, IC = 0 6 V
ICBO Collector-Cutoff Current VCB = 200 V, IE = 0 0.1 uA
IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 0.1 uA
hFE DC Current Gain* IC = 1.0 mA, VCE = 10 V
VCE(sat) Collector-Emitter Saturation Voltage * IC = 20 mA, IB = 2.0 mA 0.5 V
VBE(sat) Base-Emitter Breakdown Voltage * IC = 20 mA, IB = 2.0 mA 0.9 V
fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20V, f =100 MHz 50 MHz
Ccb Output Capacitance VCB = 20 V, IE = 0, f = 1.0 MHz 3 pF
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Thermal Resistance, Junction to Ambiet 357 °C/W
= 25°C unless otherwise noted
C
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
25
40
40
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FJV42 Rev. A
Page 2
Typical Characteristics
FJV42 NPN High Voltage Transistor
1000
VCE = 10V
100
, DC CURRENT GAIN
FE
h
10
110100
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
100
10
[pF], CAPACITANCE
cb
C
1
0.1 1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
IE = 0
f = 1MHz
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
110100
VBE(sat)
VCE(sat)
IC = 10 I
IC[mA], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
120
100
VCE = 20V
80
60
[MHz],
T
f
40
20
CURRENT GAIN BANDWIDTH PRODUCT
0
110100
IC[mA], COLLECTOR CURRENT
B
FJV42 Rev. A
Figure 3. Collector-Base Capacitance Figure 4. Current Gain Bandwidth Product
2 www.fairchildsemi.com
Page 3
0
F
3
N
Package Dimensions
FJV42 NPN High Voltage Transistor
SOT-23
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
0.20 MI
0.45~0.60
±0.10
0.03~0.1
2.40
0.38 RE
0.40 ±0.03
0.97REF 1.30 ±0.10
0.96~1.14
0.12
+0.05
–0.02
FJV42 Rev. A
1.90 ±0.03
0.508REF
3 www.fairchildsemi.com
Dimensions in Millimeters
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™
Across the board. Around the world.™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
CTL™
Current Transfer Logic™
DOME™
2
E
CMOS™
EcoSPARK
®
EnSigna™
FACT Quiet Series™
®
FACT
®
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
MICROCOUPLER™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
®
®
PACMAN™
POP™
Power220
Power247
®
®
PowerEdge™
PowerSaver™
PowerTrench
Programmable Active Droop™
QFET
®
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
ScalarPump™
SMART START™
SPM™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TCM™
The Power Franchise
®
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyWire™
TruTranslation™
µSerDes™
®
UHC
UniFET™
VCX™
Wire™
FJV42 NPN High Voltage Transistor
FJV42 NPN High Voltage Transistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.
2. A critical component is any component of a life supp ort device or system
whose failure to perform can be reasonably expecte d to cause the failure
of the life support device or system, or to affect its safet y or effectiven ess.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product develop-
Preliminary First Production This datasheet contains preliminary data, and supplementary data will
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor
Obsolete Not In Production This datasheet contains specifications on a product that has been dis-
ment. Specifications may change in any manner without notice.
be published at a later date.Fairchild Semiconductor reserves the right
to make changes at any time without notice in order to improve design.
reserves the right to make changes at any time without notice in order
to improve design.
continued by Fairchild semiconductor.The datasheet is printed for reference information only.
FJV42 Rev. A
Rev. I23
4 www.fairchildsemi.com
Loading...