Datasheet FJT44 Datasheet (Fairchild)

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FJT44 NPN Epitaxial Silicon Transistor

Features

• High Voltage Transistor

December 2009

SOT-223

1. Base 2. Collector 3. Emitter

FJT44 — NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings* T

=25°C unless otherwise noted

Symbol Parameter Value Units

CBO

CEO

EBO

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics* T

Symbol Parameter Value

θJA

* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm. mounting pad for the collector lead min. 6 cm

Collector-Base Voltage 500 V Collector-Emitter Voltage 400 V Emitter-Base Voltage 6 V Collector Current 300 mA Collector Dissipation (TA = 25 °C) 2 W Junction Temperature 150 °C Storage Temperature Range - 55 to +150 °C

=25°C unless otherwise noted

Units

Thermal Resistance, Junction to Ambient 62.5 °C/W

Ordering Information

Part Number Package Packing size Packing Method Remarks

FJT44KTF SOT-223 2500 pcs Tape and Reel

FJT44TF SOT-223 4000 pcs Tape and Reel

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FJT44 — NPN Epitaxial Silicon Transistor

Electrical Characteristics* T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

CBO

CEO

EBO

CBO

CES

EBO

CE(sat)

BE(sat)

obo

* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%

Collector-Base Breakdown Voltage IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage IE = 100μA, IC = 0 Collector-Base Cutoff Current VCB = 400V, IE = 0 Collector-Emitter Cutoff Current VCE = 400V, VBE = 0 Emitter-Base Cutoff Current VCE = 4V, IC = 0 DC Current Gain VCE=10V, IC=1mA

VCE=10V, IC=10mA VCE=10V, IC=50mA

=10V, IC=100mA

Collector-Emitter Saturation Voltage IC = 1mA, IB = 0.1mA

IC = 10mA, IB = 1mA

IC = 50mA, IB = 5mA Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA Output Capacitance VCB = 20V, IE = 0, f = 1MHz

500 V 400 V

100 nA 500 nA 100 nA

40 50

200 45 40

0.4

0.5

0.75

0.75 V 7pF

V V V

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Typical Performance Characteristics

FJT44 — NPN Epitaxial Silicon Transistor

160

140

120

100

, DC CURRENT GAIN

-20

-40 1 10 100 1000 10000

IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Turn-On Switching Times

t[us], TIME

100

VCE=10V

VCC=150V IC/IB=10

TA=25oC

VCC=150V IC/IB=10

TA=25oC VBE(off)=4V

t[us], TIME

0.1 1 10 100

IC[mA], COLLECTOR CURRENT

1000

100

[pF], CAPACITANCE

[pF],C

TA=25oC f=1MHz

0.1 110100

IC[mA], COLLECTOR CURRENT

0.1 1 10 100 1000

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Turn-Off Switching Times Figure 4. Capacitance

1.0

0.8

0.6

0.4

TA=25oC

VBE(sat) @IC/IB=10

VBE(on) @VCE=10V

[V], VOLTAGE

0.2

0.0

VCE(sat)@IC/IB=10

0.1 1 10 100 1000

IC[mA], COLLECTOR CURRENT

0.5

0.4

0.3

0.2

0.1

[V] COLLECTOR EMITTER VOLTAGE

0.0 10 100 1000 10000 100000

IC[mA], COLLECTOR CURRENT

IC=10mAIC=1mA

IC=50mA

TA=25oC

Figure 5. On Voltage Figure 6. Collector Saturation Region

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Typical Performance Characteristics (Continued)

FJT44 — NPN Epitaxial Silicon Transistor

100

, SMALL SIGNAL CURRENT GAIN

0.1

0.1 1 10 100 1000

IC[mA], COLLECTOR CURREN T

VCE=10V f=10MHz TA=25oC

Figure 1. High Frequency Current Gain

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Physical Dimensions

1.60

(

3.00

SOT-223

±0.10

MAX1.80

±0.20

1.75

±0.20

0.08MAX

+0.04

0.06

–0.02

FJT44 — NPN Epitaxial Silicon Transistor

±0.20

0.65

±0.30

2.30 TYP

(0.95) (0.95)

±0.20

0.46)(0.89)

4.60

6.50

±0.25

±0.20

0.70

±0.10

3.50 (0.60) (0.60)

0.25

+0.10 –0.05

7.00

0°~10°

Dimensions in Millimeters

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AccuPower¥ Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥

CROSSVOLT¥

CTL™ Current Transfer Logic™ EcoSPARK

EfficentMax™ EZSWITCH™*

™*

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FACT

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Programmable Active Droop¥ QFET QS¥ Quiet Series¥ RapidConfigure¥

Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START¥ SPM STEALTH™ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6

SuperSOT¥-8 SupreMOS™ SyncFET™ Sync-Lock™

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I41