Page 1
FJV992
Audio Frequency Low Noise Amplifier
• Complement to FJV1845
PNP Epitaxial Silicon Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
FJV992
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -120 V
Collector-Emitter Voltage -120 V
Emitter-Base Voltage -5 V
Collector Current -50 mA
Collector Power Dissipation 300 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA -300 mV
V
CE
(on) Base-Emitter On Voltage VCE= -6V, IC= -1mA -0.55 -0.65 V
V
BE
f
T
C
ob
NV Noise Voltage 40 mV
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -120 V
Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -120 V
Emitter-Emitter Breakdown Voltage IE= -10µA, IC=0 -5 V
Emitter-Base Cutoff Current VEB= -6V, IC=0 -30 nA
DC Current Gain VCE= -6V, IC= -0.1mA
Current Gain Bandwidth Product VCE= -6V, IC= -1mA 50 MHz
Output Capacitance VCB= -30V, IE=0, f=1MHz 3 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
= -6V, IC= -1mA
CE
150
200 800
h
Classification
FE2
Classification P F E
h
FE2
200 ~ 400 300 ~ 600 400 ~ 800
Marking
2JP
hFE Classification
©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
Page 2
Typical Characteristics
FJV992
-1.0
-0.8
-0.6
-0.4
-0.2
[mA], COLLECTOR CURRENT
C
I
0.0
0 -20 -40 -60 -80 -100
IB = -1.2µA
IB = -1.2µA
IB = -1.0µA
IB = 0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Static Characteristic
1000
Ta=1250C
Ta=250C
Ta=-250C
100
IB = -0.8µA
IB = -0.6µA
IB = -0.4µA
IB = -0.2µA
VCE=-6V
-10
IB = -24µA
-8
-6
-4
-2
[mA], COLLECTOR CURRENT
C
I
0
0-1-2-3-4-5
IB = -20µA
IB = -16µA
IB = -12µA
IB = -8µA
IB = -4µA
IB = 0
VCE[V], COLLECTOR-EMITTER VOLTAGE
-1
Ta=250C
Ta=1250C
-0.1
IC=10I
B
, DC CURRENT GAIN
FE
h
10
-1E-3 -0.01 -0.1
IC[mA], COLLECTOR CURRENT
Ta=-250C
(SAT)[V], SATURATION VOLTAGE
CE
V
-0.01
-1E-3 -0.01 -0.1
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage
1
Ta=-250C
Ta=250C
Ta=1250C
(SAT)[V], SATURATION VOLTAGE
BE
V
0.1
1E-3 0.01 0.1
IC[mA], COLLECTOR CURRENT
IC=10I
-0.12
B
-0.10
-0.08
-0.06
-0.04
[A], COLLECTOR CURRENT
C
-0.02
I
-0.00
-0.2 -0.4 -0.6 -0.8 -1.0
VBE[V], BASE-EMITTER VOLTAGE
Ta=1250C
Ta=250C
Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter Voltage
VCE=-6V
Ta=-250C
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
Page 3
FJV992
Typical Characteristics
10
1
[pF], CAPACITANCE
ob
C
0.1
-1 -10 -100 -1000
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 7. Collector Output Capacitance Figure 8. Current Gain Bandwidth Product
600
500
400
(Continued)
IE=0
f = 1MHz
1000
100
10
1
0.1 1 10 100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
VCE = -6V
IE[mA], COLLECTOR CURRENT
300
200
[mW], POWER DISSIPATION
C
100
P
0
0 25 50 75 100 125 150 175
Ta[oC], AMBIENT TEMPERATURE
Figure 9. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
Page 4
Package Dimensions
0.40
±0.03
FJV992
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
Page 5
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®
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2
C™
I
Across the board. Around the world.™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status D efini tion
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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