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FJP13009
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
FJP13009 High Voltage Fast-Switching NPN Power Transistor
March 2007
1
TO-220
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings* T
= 25°C unless otherwise noted (notes_1)
C
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Base Voltage 700 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 9 V
Collector Current (DC) 12 A
Collector Current (Pulse) 24 A
Base Current 6 A
Collector Dissipation (TC = 25°C) 100 W
Junction Temperature 150 °C
Storage Temperature Range -65 ~ 150 °C
Package Marking and Ordering Information
Device Item (notes_2) Device Marking Package Packing Method Qty(pcs)
FJP13009 J13009 TO-220 Bulk 1,200
FJP13009H2TU J130092 TO-220 TUBE 1,000
FJP13009TU J13009 TO-220 TUBE 1,000
Notes_2 :
1) The Affix “-H2” means the hFE classification.
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FJP13009 Rev. B
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FJP13009 High Voltage Fast-Switching NPN Power Transistor
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Typ. Max Units
V
(sus) Collector-Emitter Sustaining Voltage IC = 10mA, IB = 0 400 V
CEO
I
EBO
h
FE
VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 1A
VBE (sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 1A
C
ob
f
T
t
ON
t
STG
t
F
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%
Emitter Cut-off Current V
* DC Current Gain
= 9V, IC = 0 1 mA
EB
V
= 5V, IC = 5A (h
CE
V
= 5V, IC = 8A
CE
FE1
)
8
6
40
30
1
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
1.5
3
1.2
IC = 8A, IB = 1.6A
Output Capacitance V
Current Gain Bandwidth Product V
Turn On Time V
Storage Time 3 µs
= 10V, f = 0.1MHz 180 pF
CB
= 10V, IC = 0.5A 4 MHz
CE
= 125V, IC = 8A
CC
IB1 = - IB2 = 1.6A, RL = 15,6Ω
1.6
1.1 µs
Fall Time 0.7 µs
hFE Classification
Classification H1 H2
h
FE1
8 ~ 17 15 ~ 28
V
V
V
V
V
FJP13009 Rev. B
2 www.fairchildsemi.com
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Typical Performance Characteristics
FJP13009 High Voltage Fast-Switching NPN Power Transistor
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
VCE = 5V
VCE(sat)
IC = 3 I
B
10
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
10000
1000
[ns], TURN ON TIME
100
D
, t
R
t
tD, VBE(off)=5V
VCC=125V
I
t
R
=5I
C
B
[ns], TURN OFF TIME
F
, t
STG
t
FJP13009 Rev. B
1
0.1 1 10 100 1000
VCB[V], COLLECTOR BASE VOLTAGE
10
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
10000
1000
100
0.1 1 10 100
VCC=125V
IC=5I
t
STG
t
F
IC[A], COLLECTOR CURRENT
100
B
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
D
C
Figure 5. Turn Off Time Figure 6. Forward Bias Safe Operating Area
3 www.fairchildsemi.com
1ms
10
µ
1
s
00
µ
s
Page 4
Typical Performance Characteristics (Continued)
FJP13009 High Voltage Fast-Switching NPN Power Transistor
100
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
10 100 1000 10000
Vcc=50V,
I
=1A, IB2 = -1A
B1
L = 1mH
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
120
100
80
60
40
[W], POWER DISSIPATION
C
P
20
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 8. Power Derating
FJP13009 Rev. B
4 www.fairchildsemi.com
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Mechanical Dimensions
4.50
0
0
5
FJP13009 High Voltage Fast-Switching NPN Power Transistor
TO-220
(1.70)
±0.20
9.20
±0.20
13.08
±0.10
1.30
(1.46)
(1.00)
1.27
2.54TYP
[2.54
±0.10
±0.20
]
9.90
(8.70)
ø3.60
±0.20
±0.10
(45°)
1.52
±0.10
0.80
±0.10
2.54TYP
[2.54
±0.20
(3.70)(3.00)
]
±0.10
2.80
±0.20
18.95MAX.
15.90
±0.30
10.08
0.50
+0.10
–0.05
1.30
2.40
±0.2
+0.1
–0.0
±0.20
FJP13009 Rev. B
10.00
±0.20
Dimensions in Millimeters
5 www.fairchildsemi.com
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
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Rev. I24
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
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