Datasheet FDZ663P Datasheet (Fairchild)

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FDZ663P

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WL-CSP 0.8X0.8 Thin

P-Channel 1.5 V Specified PowerTrench® Thin

-20 V, -2.7 A, 134 mΩ

December 2011

WL-CSP MOSFET

FDZ663P P-Channel 1.5 V Specified PowerTrench

Features

 Max r  Max r  Max r  Max r  Occupies only 0.64 mm

area of 2 x 2 BGA

 Ultra-thin package: less than 0.4 mm height when mounted

to PCB

 RoHS Compliant

= 134 mΩ at VGS = -4.5 V, ID = -2 A

DS(on)

= 171 mΩ at VGS = -2.5 V, ID = -1.5 A

DS(on)

= 216 mΩ at VGS = -1.8 V, ID = -1 A

DS(on)

= 288 mΩ at VGS = -1.5 V, ID = -1 A

DS(on)

of PCB area. Less than 16% of the

General Description

Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ663P minimizes both PCB space and r advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile (0.4 mm) and small (0.8x0.8 mm low r

DS(on)

) packaging, low gate charge, and

DS(on)

. This

Applications

 Battery management  Load switch  Battery protection

Thin

WL-CSP MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage -20 V Gate to Source Voltage ±8 V

-Continuous TA = 25 °C (Note 1a) -2.7

-Pulsed -10 Power Dissipation TA = 25 °C (Note 1a) 1.3 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C (Note 1b) 0.4

Thermal Characteristics

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 93 Thermal Resistance, Junction to Ambient (Note 1b) 311

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

EJ FDZ663P WL-CSP 0.8X0.8 Thin 7 ” 8 mm 5000 units

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FDZ663P P-Channel 1.5 V Specified PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -20 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = -16 V, V Gate to Source Leakage Current VGS = ±8 V, V

= -250 μA, referenced to 25 °C -14 mV/°C

= 0 V -1 μA

= 0 V ±60 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA -0.3 -0.7 -1.2 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= -250 μA, referenced to 25 °C 2.4 mV/°C

= -4.5 V, ID = -2 A 103 134

= -2.5 V, ID = -1.5 A 122 171

= -1.8 V, ID = -1 A 149 216

= -1.5 V, ID = -1 A 186 288

= -4.5 V, ID = -2 A, TJ =125°C 137 198

Forward Transconductance VDD = -5 V, ID = -2 A 8 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 62 85 pF Reverse Transfer Capacitance 53 80 pF

Switching Characteristics

d(on)

d(off)

Q Q Q

g gs gd

Turn-On Delay Time Rise Time 6.2 12 ns Turn-Off Delay Time 67 107 ns Fall Time 32 52 ns Total Gate Charge Gate to Source Charge 0.6 nC Gate to Drain “Miller” Charge 1.6 nC

= -10 V, VGS = 0 V,

f = 1 MHz

= -10 V, ID = -2.5 A,

= -4.5 V, R

= -4.5 V, VDD = -10 V,

= -2.5 A

GEN

= 6 Ω

394 525 pF

4.8 10 ns

5.9 8.2 nC

mΩ

Thin

WL-CSP MOSFET

Drain-Source Diode Characteristics

Notes:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boa rd of FR-4 mate rial. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 10 18 nC

a. 93 °C/W when mounted on a 1 in2 pad of 2 oz copper.

= 0 V, IS = -1.4 A (Note 2) -0.8 -1.2 V

= -2.5 A, di/dt = 100 A/μs

θJC

30 48 ns

is guaranteed by design while R

b. 311 °C/W when mounted on a minimum pad of 2 oz copper.

θCA

www.fairchildsemi.com

is determined by

Page 3

FDZ663P P-Channel 1.5 V Specified PowerTrench

0123

VGS = -1.5 V

VGS = -1.8 V

VGS = -4.5 V

VGS = -3 V

VGS = -2.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

-I

, DRAIN CURRENT (A)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

0246810

VGS = -1.5 V

VGS = -3 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

-ID, DRAIN CURRENT (A)

VGS = -2.5 V

VGS = -4.5 V

= -1.8 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = -2 A V

= -4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTI ON TEMPERATURE (

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

150

300

450

600

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = 125 oC

= 25

ID = -2 A

DS(on)

, DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

-VGS, GATE TO SO URCE VOLTAGE (V)

0 0.5 1.0 1.5 2.0 2.5

TJ = 25 oC

= -5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 150 oC

-I

, DRAIN CURRENT (A)

-VGS, GATE TO SOURCE V OLTAGE (V)

0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

-I

, REVERSE DRAIN CURRENT (A)

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Nor m a lized On-Res i s t ance vs

Drain Current and Gate Voltage

Thin

WL-CSP MOSFET

Figur e 3 . N ormali z e d O n - Resis t a n c e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resi sta nce vs Gate to

Source Voltage

Figure 6.

Sourc e to D rain Diod e

Forward Voltage vs Source Current

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FDZ663P P-Channel 1.5 V Specified PowerTrench

0246

1.5

3.0

4.5

ID = -2.5 A

VDD = -12 V

= -10 V

-V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = -8 V

0.1 1 10 20

100

1000

2000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.1 1 10 100

0.001

0.01

0.1

THIS A REA IS LIMITED BY r

DS(on)

100 us

1 ms

100 ms

1 s

10 s

10 ms

SINGLE PULSE T

= MAX RATED

θJA

= 311

C/W

TA = 25

-I

, DRAIN CURRENT (A)

-VDS, DRAIN to SOURCE VOLTAGE (V)

10-410-310-210

-1

110

100 1000

0.1

100

1000

SINGLE PULSE R

θJA

= 311

C/W

= 25

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

-4

-3

-2

-1

110

100 1000

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 311 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PU L SE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

Cap a ci t a nc e v s D r ai n

to Source Voltage

Thin

Figure 9.

Fo rward B ias Safe

Ope r at i n g A r e a

Figure 11. Junction-to-Ambient Transient Thermal Response Curve

WL-CSP MOSFET

Figure 10. Single Pluse Maximum

Power Dissipation

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Page 5

Dimensional Outline and Pad Layout

FDZ663P P-Channel 1.5 V Specified PowerTrench

Thin

WL-CSP MOSFET

www.fairchildsemi.com

Page 6

TRADEMARKS

™

The following includes registered and unregistered trademar ks and service marks, owned by Fair child Semicondu ctor and/or its glo bal subsidiaries, and is no t intended to be an exhaustive list of all such trademarks.

2Cool™ AccuPower™ Auto-SPM™ AX-CAP™*

BitSiC Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™ F-PFS™

FRFET Global Power Resource GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ mWSaver™ OptoHiT™ OPTOLOGIC OPTOPLANAR

PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™

SPM STEALTH™ SuperFET SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS SyncFET™ Sync-Lock™

®*

The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™

TranSiC TriFault Detect™ TRUECURRENT μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDZ663P P-Channel 1.5 V Specified PowerTrench

Thin

WL-CSP MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing proble m in the industry. All manufactures of semicondu ctor products a re experiencing counterfe iting of their

parts. Customers who inadvertently purchase counterfeit parts experience many problems su ch as l oss of bra nd reput ation , su bstan dard per fo rmance, f ailed application, and increased cost of production and manufacturing delays. Fairchild is taking st rong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild stro ngly encourages custo mers to purchase Fairchild parts eithe r directly fro m Fairchild or from A uthorized Fairchil d Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceabi lity, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

committed to combat this global problem and encourage our customers to do their part in stopping th is practice by buying direct or from authorized distribut ors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I60

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