Page 1
FDZ375P
P-Channel 1.5 V Specified PowerTrench® Thin
-20 V, -3.7 A, 78 mΩ
Features
Max r
Max r
Max r
Max r
Occupies only 1.0 mm2 of PCB area. Less than 30% of the
area of 2 x 2 BGA
Ultra-thin package: less than 0.4 mm height when mounted to
PCB
RoHS Compliant
= 78 mΩ at VGS = -4.5 V, ID = -2.0 A
DS(on)
= 92 mΩ at VGS = -2.5 V, ID = -1.5 A
DS(on)
= 112 mΩ at VGS = -1.8 V, ID = -1.0 A
DS(on)
= 150 mΩ at VGS = -1.5 V, ID = -1.0 A
DS(on)
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench® process
with state of the art "fine pitch" Thin WLCSP packaging process,
the FDZ375P minimizes both PCB space and r
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low r
Applications
Battery management
Load switch
Battery protection
WL-CSP MOSFET
.
DS(on)
April 2010
. This
DS(on)
FDZ375P P-Channel 1.5 V Specified PowerTrench
®
Thin
D
BOTTOM
Pin 1
S
S
G
Pin 1
G
TOP
S
D
WL-CSP 1.0X1.0 Thin
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage -20 V
Gate to Source Voltage ±8 V
-Continuous TA = 25°C (Note 1a) -3.7
-Pulsed -12
Power Dissipation TA = 25°C (Note 1a) 1.7
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25°C (Note 1b) 0.5
A
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 75
Thermal Resistance, Junction to Ambient (Note 1b) 260
Package Marking and Ordering Information
A
W
°C/W
WL-CSP MOSFET
Device Marking Device Package Reel Size Tape Width Quantity
N FDZ375P WL-CSP 1.0X1.0 Thin 7 ” 8 mm 5000 units
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
1
www.fairchildsemi.com
Page 2
FDZ375P P-Channel 1.5 V Specified PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = -16 V, V
Gate to Source Leakage Current VGS = ±8 V, V
I
= -250 µA, referenced to 25 °C -12 mV/°C
D
= 0 V -1 µA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA -0.3 -0.5 -1.2 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= -250 µA, referenced to 25 °C 2 mV/°C
D
V
= -4.5 V, ID = -2.0 A 65 78
GS
= -2.5 V, ID = -1.5A 77 92
V
GS
= -1.8 V, ID = -1.0 A 92 112
V
GS
= -1.5 V, ID = -1.0 A 112 150
V
GS
= -4.5 V, ID = -2.0 A,
V
GS
T
=125°C
J
98 143
Forward Transconductance VDD = -5 V, ID = -3.3 A 11 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 110 145 pF
Reverse Transfer Capacitance 95 150 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 8.2 15 ns
Turn-Off Delay Time 138 221 ns
Fall Time 84 124 ns
Total Gate Charge
Gate to Source Charge 0.8 nC
Gate to Drain “Miller” Charge 3 nC
= -10 V, VGS = 0 V,
V
DS
f = 1 MHz
= -10 V, ID = -3.3 A,
V
DD
V
= -4.5 V, R
GS
= -4.5 V, VDD = -10 V,
V
GS
I
= -3.3 A
D
GEN
= 6 Ω
650 865 pF
5.3 11 ns
11 15 nC
mΩ
®
Thin
WL-CSP MOSFET
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device moun ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
Maximum Continuous Drain-Source Diode Forward Current -1.1 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 43 69 nC
GS
= -3.3 A, di/dt = 100 A/µs
I
F
a. 75 °C/W when mounted on
2
a 1 in
pad of 2 oz copper.
= 0 V, IS = -1.3 A (Note 2) -0.7 -1.2 V
68 109 ns
is guaranteed by desig n while R
θJC
b. 260 °C/W when mounted on a
minimum pad of 2 oz copper.
2
is determined by
θCA
www.fairchildsemi.com
Page 3
FDZ375P P-Channel 1.5 V Specified PowerTrench
Typical Characteristics T
12
VGS = -4.5 V
VGS = -3 V
VGS = -2.5 V
9
VGS = -2 V
VGS = -1.8 V
6
, DRAIN CURRENT (A)
D
3
-I
0
0 0.51.01.52.02.5
-V
Figure 1.
1.6
ID = -2 A
V
= -4.5 V
GS
1.4
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
VGS = -1.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
, DRAIN TO SOURCE VOLTAGE (V)
DS
On Region Characteristics Figure 2.
T
, JUNCTION TEMPERATURE (
J
= 25°C unless otherwise noted
J
o
C)
2.5
V
= -1.5 V
GS
2.0
1.5
NORMALIZED
V
GS
= -1.8 V
V
= -2 V
GS
VGS = -2.5 V
1.0
V
V
= -3 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX
DRAIN TO SOURCE ON-RESISTANCE
0.5
036912
-I
, DRAIN CURRENT (A)
D
GS
GS
= -4.5 V
Norma l i z e d O n - Resistance
vs Drain Current and Gate Voltage
400
(mΩ)
300
200
DRAIN TO
,
DS(on)
r
100
SOURCE ON-RESISTANCE
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
-V
, GATE TO SOURCE VO L TA G E (V)
GS
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = -2 A
TJ = 125 oC
TJ = 25 oC
®
Thin
WL-CSP MOSFET
Fi g ure 3 . Norm a lize d On Re sista n ce
vs Junction Temperature
12
PULSE DURATION = 80 µ s
DUTY CYCLE = 0.5% MAX
9
V
= -5 V
DS
6
, DRAIN CURRENT (A)
3
D
-I
0
0.00.51.01.52.02.5
TJ = 150 oC
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
TJ = 25 oC
TJ = -55 oC
Figure 4.
On-Resistanc e vs Gate to
Source Voltage
100
V
= 0 V
GS
10
TJ = 150 oC
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
-I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Dr ai n Diode
TJ = 25 oC
TJ = -55 oC
Forward Voltage vs Source Current
3
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Page 4
FDZ375P P-Channel 1.5 V Specified PowerTrench
Typical Characteristics T
4.5
ID = -3.3 A
3.0
1.5
, GATE TO SOURCE VOLTAGE (V)
GS
-V
0
036912
Figure 7.
Gate Charge Characteristics Figure 8.
30
10
1
THIS AR E A IS
0.1
LIMITED BY r
SINGLE PULSE
, DRAIN CURRENT (A)
T
D
0.01
-I
0.001
= MAX RATED
J
R
= 260
θJA
o
T
= 25
C
A
0.1 1 10 100
-VDS, DRAIN to SOURCE VOLTAGE (V)
VDD = -8 V
V
DD
Qg, GATE CHARGE (nC)
DS(on)
o
C/W
= 25°C unless otherwise noted
J
VDD = -10 V
= -12 V
100 us
1 ms
10 ms
100 ms
1 s
10 s
DC
5000
1000
100
CAPACITANCE (pF)
f = 1 MHz
V
= 0 V
GS
10
0.1 1 10 20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
to Source Voltage
1000
100
10
1
), PEAK TRANSIENT POWER (W)
PK
P(
0.1
10-410-310-210
t, PULSE WIDTH (sec)
-1
110
SINGLE PULSE
= 260
R
θJA
o
T
= 25
A
C
iss
C
oss
C
rss
o
C/W
C
100 1000
®
Thin
WL-CSP MOSFET
Figure 9. Forward Bias Safe
Operating Area
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
θJA
Z
0.1
IMPEDANCE,
0.01
NORMALIZED THERMAL
0.001
0.1
0.05
0.02
0.01
-4
10
10
Figure 11.
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
Fig u r e 10. Si n g le Puls e M a ximum
Power Dissipation
-3
SINGLE PULSE
= 260 oC/W
R
θJA
-2
10
-1
10
t, RECTANGULAR PULSE DURATION (sec)
110
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
Junction-to-Ambient Transient Thermal Response Curve
4
P
DM
t
1
t
2
2
x R
+ T
θJA
θJA
A
100 1000
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Page 5
Dimensional Outline and Pad Layout
FDZ375P P-Channel 1.5 V Specified PowerTrench
®
Thin
WL-CSP MOSFET
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
5
www.fairchildsemi.com
Page 6
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tm
®
tm
tm
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intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
®
®
®
®
*
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
®
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
SM
®
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
®
®
™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
The Power Franchise
®
TinyBoost™
TinyBuck™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
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®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THEREIN, WHICH COVERS THESE PRODUCTS.
FDZ375P P-Channel 1.5 V Specified PowerTrench
®
Thin
WL-CSP MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2010 Fairchild Semiconductor Corporation
FDZ375P Rev.C
Datasheet contains the design specificatio ns for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinu ed by Fai r child
Semiconductor. The datashe et is for reference information only.
Rev. I48
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