Datasheet FDS4780 Datasheet (Fairchild Semiconductor)

March 2003

FDS4780

40V N-Channel PowerTrench MOSFET

FDS4780

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R

and fast switching speed.

DS(ON)

Applications

• DC/DC converter

D

D

D

D

D

D

D

D

SO-8

Pin 1

SO-8

S

Absolute Maximum Ratings T

G

G

S

S

S

S

S

o

=25

C unless otherwise noted

A

Features

• 10.8 A, 40 V. R

• Low gate charge (30 nC)

• High performance trench technology for extremely

DS(ON)

5

6

7

8

low R

• High power and current handling capability

= 10.5 mΩ @ VGS = 10 V

DS(ON)

4

3

2

1

Symbol Parameter Ratings Units

V

Drain-Source Voltage 40 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) 10.8 A

– Pulsed 45

PD

TJ, T

STG

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150

(Note 1c)

± 20

1.4

1.2

V

W

°C

Thermal Characteristics

R

θJA

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient (Note 1c) 125

Thermal Resistance, Junction-to-Case

(Note 1a) 50

(Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2003 Fairchild Semiconductor Corpora tion

FDS4780 FDS4780 13’’ 11mm 2500 units

°C/W

°C/W

°C/W

FDS4780 Rev B (W)

FDS4780

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

EAS Drain-Source Avalanche Energy Single Pulse, VDD=20V, ID=10.8A 240 mJ

IAS Drain-Source Avalanche Current 10.8 A

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆TJ

I

Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA

VGS = 0 V, ID = 250 µA

ID = 250 µA, Referenced to 25°C

40 V

42

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

I

D(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source On–Resistance

On–State Drain Current VGS = 10 V, VDS = 5 V 22 A

VDS = VGS, ID = 250 µA

ID = 250 µA, Referenced to 25°C

VGS = 10 V, ID = 10.8 A

= 10 V,ID = 10.8 A, TJ=115°C

V

GS

2 3.9 5 V

–8

8

10.5

13

21

mV/°C

mΩ

gFS Forward Transconductance VDS = 10 V, ID = 10.8 A 36 S

Dynamic Characteristics

C

Input Capacitance 1686 pF

iss

C

Output Capacitance 384 pF

oss

C

Reverse Transfer Capacitance

rss

V

= 20 V, V

DS

f = 1.0 MHz

= 0 V,

GS

185 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 11 22 ns

d(on)

tr Turn–On Rise Time 9 18 ns

t

Turn–Off Delay Time 30 48 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 30 40 nC

Qgs Gate–Source Charge 9 nC

Qgd Gate–Drain Charge

V

= 20 V, ID = 1 A,

DD

= 10 V, R

V

GS

GEN

= 6 Ω

VDS = 20 V, ID = 10.8 A,
VGS = 10 V

15 27 ns

10 nC

FDS4780 Rev B (W)

FDS4780

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A

VSD

Drain–Source Diode Forward
Voltage

= 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V

V

GS

trr Diode Reverse Recovery Time IF = 10.8 A, diF/dt = 100 A/µs 27 nS

Qrr Diode Reverse Recovery Charge 58 nC

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

is guaranteed by design while R

θJC

a) 50°C/W when

mounted on a 1in
pad of 2 oz copper

is determined by the user's board design.

θCA

2

b) 105°C/W when

mounted on a .04 in
pad of 2 oz copper

2

c) 125°C/W when mounted

on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS4780 Rev B (W)

Typical Characteristics

FDS4780

80

VGS = 10V

70

60

50

40

30

, DRAIN CURRENT (A)

D

20

I

10

0

01234

6.0V

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

5.5V

5.0V

4.5V

2

VGS = 5.0V

1.8

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0 20406080

5.5V

6.0V

I

, DRAIN CURRENT (A)

D

7.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2

ID = 10.8A

1.8
V

= 10V

GS

1.6

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 2 5 50 75 100 125 150 175

, JUNCTION TEMPERATURE (oC)

T

J

0.025

0.022

0.019

0.016

0.013

, ON-RESISTANCE (OHM)

0.01

DS(ON)

R

0.007

TA = 25oC

45678910

V

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

GS

8.0V
10V

ID = 5.4A

Figure 3. On-Resistance Variation

withTemperature.

80

VDS = 5V

60

40

, DRAIN CURRENT (A)

D

20

I

0

23456

, GATE TO SOURCE VOLTAGE (V)

V

GS

TA = -55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

25oC

125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

V

BODY DIODE FORWARD VOLTAGE (V)

SD,

-55oC

with Source Current and Temperature.

FDS4780 Rev B (W)

)

Typical Characteristics

FDS4780

10

ID = 10.8 A VDS = 10V

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 5 10 15 2 0 25 30 35

Q

, GATE CHARGE (nC)

g

20V

30V

2400

2000

C

1600

1200

800

CAPACITANCE (pF)

400

C

OSS

C

RSS

0

0 10203040

ISS

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

1s

100ms

10ms

1ms

R

LIMIT

DS(ON)

10

1

VGS = 10V

SINGLE PULSE

, DRAIN CURRENT (A)

0.1

D

I

R

= 125oC/W

θJA

= 25oC

T

A

0.01

0.01 0.1 1 10 100

, DRAIN-SOURCE VOLTAGE (V)

V

DS

10s

DC

100µs

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

f = 1 MHz
VGS = 0 V

SINGLE PULSE
R

= 125°C/W

θJA

= 25°C

T

A

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

R

(t) = r(t) * R

JA

0.2

0.1

0.01

THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.001

0.1

0.05

0.02

0.01

SINGLE PULSE

θ

R

JA

θ

P(pk

- TA = P * R

T

J

Duty Cycle, D = t

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

= 125oC/W

t

1

t

2

θ

JA

θ

(t)

JA

/ t

1

2

FDS4780 Rev B (W)

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systems which, (a) are intended for surgical implant into
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I2