Page 1
tm
FDMC8854
®
N-Channel Power Trench
30V, 15A, 5.7mΩ
Features
Max r
Max r
Low Profile - 1mm max in Power 33
RoHS Compliant
= 5.7mΩ at VGS = 10V, ID = 15A
DS(on)
= 7.6mΩ at VGS = 4.5V, ID = 13A
DS(on)
MOSFET
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.
FDMC8854 N-Channel PowerTrench
February 2007
Application
DC - DC Conversion
Bottom
8
7
6
5
1
2
3
4
D
Power 33
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 15
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 30
Power Dissipation TC = 25°C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25°C unless otherwise noted
A
Thermal Characteristics
Top
D
D
D
5
6
7
G
S
S
S
= 25°C 67
C
= 25°C (Note 1a) 15
A
= 25°C (Note 1a) 2.0
A
8
®
MOSFET
4
3
2
1
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 60
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC8854 FDMC8854 Power 33 7’’ 8mm 3000 units
©2007 Fairchild Semiconductor Corporation
FDMC8854 Rev.C
°C/W
1
www.fairchildsemi.com
Page 2
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24V, V
Gate to Source Leakage Current VGS = ±20V, V
I
= 250µA, referenced to 25°C 21 mV/°C
D
= 0V 1 µA
GS
= 0V ±100 nA
GS
FDMC8854 N-Channel PowerTrench
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA11.93V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 5V, ID = 15A 60 S
(Note 2)
I
= 250µA, referenced to 25°C -6 mV/°C
D
V
= 10V, ID = 15A 4.4 5.7
GS
= 4.5V, ID = 13A 5.6 7.6
GS
= 10V, ID = 15A, TJ = 125°C 6.6 9.0
V
GS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Input Capacitance
Output Capacitance 515 685 pF
Reverse Transfer Capacitance 290 435 pF
= 10V, VGS = 0V,
V
DS
f = 1MHz
Gate Resistance f = 1MHz 1.3 Ω
Turn-On Delay Time
Rise Time 510ns
Turn-Off Delay Time 31 50 ns
VDD = 10V, ID = 15A
V
= 10V, R
GS
GEN
Fall Time 510ns
Total Gate Charge
Gate to Source Gate Charge 7 nC
Gate to Drain “Miller” Charge 7 nC
=10V, ID = 15A,
V
DD
V
= 10V
GS
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 28 42 nC
= 0V, IS = 15A (Note 2) 0.8 1.3 V
GS
= 15A, di/dt = 100A/µs
I
F
= 6Ω
2560 3405 pF
13 23 ns
41 57 nC
33 50 ns
is guaranteed by design while R
θJC
is determined by
θCA
mΩV
®
MOSFET
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDMC8854 Rev.C
a. 60°C/W when mounted on
2
a 1 in
pad of 2 oz copper
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
2
www.fairchildsemi.com
Page 3
FDMC8854 N-Channel PowerTrench
Typical Characteristics T
180
150
120
90
60
, DRAIN CURRENT (A)
D
I
30
0
012345
Figure 1.
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
1.6
1.4
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
-75 -50 -25 0 25 50 75 100 125 150
Figu r e 3. Norm a l ized On - R esista n c e
vs Junction Temperature
VGS = 10.0V
VGS =4.5V
VGS = 4.0V
VGS = 3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VDS, DRAIN TO SOURCE V OLTAGE (V)
On-Region Characteristics Figure 2.
ID =15A
V
= 10V
GS
TJ, JUNCTION TEMPERATURE (oC)
= 25°C unless otherwise noted
J
3.0
2.5
VGS = 3.5V
2.0
1.5
NORMALIZED
1.0
0.5
DRAIN TO SOURCE ON-RESISTANCE
0 30 60 90 120 150 180
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 4V
ID, DRAIN CURRENT(A)
VGS = 4.5V
VGS = 10.0V
Norma l i z e d O n - R esistance
vs Drain Current and Gate Voltage
15
(mΩ)
12
9
, DRAIN TO
DS(on)
r
6
SOURCE ON-RESISTANCE
3
246810
VGS, GATE TO SOURCE VOLTA GE (V)
Figure 4.
On-Resis tance vs Gate to
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID =15A
TJ = 125oC
o
T
= 25
C
J
Source Voltage
®
MOSFET
100
80
60
40
20
, DRAIN CURRENT (A)
D
I
FDMC8854 Rev.C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 150oC
0
1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = -55oC
Figure 5. Transfer Characteristics
100
V
= 0V
GS
10
1
0.1
TJ = 150oC
TJ = 25oC
TJ = -55oC
0.01
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWA RD VO LT AGE (V)
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
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Page 4
FDMC8854 N-Channel PowerTrench
Typical Characteristics T
10
ID = 15A
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
0
GS
V
0 1020304050
Figure 7.
20
10
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100 1000
Figure 9.
100
100
10
1
R
DS(ON)
, DRAIN CURRENT (A)
0.1
D
I
0.01
0.01 0.1 1 10 100
Figure 11. Forward Bias Safe
VDD = 5V
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
TJ = 125oC
tAV, TIME IN AVALANCHE(ms)
Unc l a m p e d I ndu c t i v e
Switching Capability
LIMITED
SINGLE PULSE
T
= MAX RATED
J
o
= 135
θJA
C/W
o
C
R
TA = 25
VDS, DRAIN to SOURCE VOLTAGE (V)
Operating Area
= 25°C unless otherwise noted
J
VDD = 10V
V
=15V
DD
TJ = 25oC
1ms
10ms
100ms
1s
DC
4000
C
iss
1000
C
oss
C
rss
CAPACITANCE (pF)
f = 1MHz
= 0V
V
GS
100
0.1 1 10
VDS, DRAIN TO SOURCE V OLTAGE (V)
Capacitance vs Drain
to Source Voltage
80
60
V
= 10V
GS
40
Package limited
20
, DRAIN CURRENT (A)
D
I
R
= 3oC/W
θJC
0
25 50 75 100 125 150
V
= 4.5V
GS
TC, CASE TEMPERAT URE (oC)
Figure 10.
Ma xim um C ont inu ous Dra in
Current vs Case Temperature
200
100
10
1
), PEAK TRANSIENT POWER (W)
PK
0.5
P(
-3
10
10
Figure 12.
VGS = 10V
-2
t, PULSE WID T H (s )
Single Pulse M aximu m
TA = 25oC
FOR TEMPERATURES
o
ABOVE 25
CURRENT AS FOLLOWS:
-1
10
10010
C DERATE PEAK
150 TA–
---------------------- -
I = I
25
125
SINGLE PULSE
1
Power Dissipation
30
10210
®
MOSFET
3
FDMC8854 Rev.C
4
www.fairchildsemi.com
Page 5
FDMC8854 N-Channel PowerTrench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-3
10
-2
10
NORMALIZED THERMAL
θJA
0.1
IMPEDANCE, Z
0.01
0.004
= 25°C unless otherwise noted
J
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
2
10
3
10
®
MOSFET
FDMC8854 Rev.C
5
www.fairchildsemi.com
Page 6
FDMC8854 N-Channel PowerTrench
®
MOSFET
FDMC8854 Rev.C
6
www.fairchildsemi.com
Page 7
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF
ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE
WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
®
UniFET™
VCX™
Wire™
FDMC8854 N-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain
life, or (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FDMC8854 Rev.C
Rev. I22
7
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