Datasheet FDMC86324 Datasheet (Fairchild)

FDMC86324

G

S

S

S

D
D

D

D

5

6

7

8

3

2

1

4

Top

Power 33

Bottom

D

D

D

D

S

S

S

G

Pin 1

N-Channel Power Trench® MOSFET

80 V, 20 A, 23 mΩ

Features

 Max r
 Max r
 Low Profile - 1 mm max in Power 33
 100% UIL Tested

 RoHS Compliant

= 23 mΩ at VGS = 10 V, ID = 7 A

DS(on)

= 37 mΩ at VGS = 6 V, ID = 4 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Application

 DC - DC Conversion

May 2010

®

process that has

FDMC86324 N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC86324 FDMC86324 Power 33 13’’ 12 mm 3000 units

©2010 Fairchild Semiconductor Corporation
FDMC86324 Rev.C

Drain to Source Voltage 80 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 20

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30
Single Pulse Avalanche Energy (Note 3) 72 mJ
Power Dissipation TC = 25 °C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

A

= 25 °C 30

C

= 25 °C (Note 1a) 7

A

= 25 °C (Note 1a) 2.3

A

1

A

W

°C/W

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FDMC86324 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

ΔV

GS(th)

ΔT

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 80 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 64 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 69 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 3.1 4.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 10 V, ID = 7 A 19 S

= 250 μA, referenced to 25 °C -9 mV/°C

I

D

V

= 10 V, ID = 7 A 19.1 23

GS

= 6 V, ID = 4 A 25.5 37

GS

= 10 V, ID = 7 A, TJ = 125 °C 32.5 40

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 175 235 pF
Reverse Transfer Capacitance 15 25 pF

V

= 50 V, VGS = 0 V,

DS

f = 1 MHz

725 965 pF

Gate Resistance 0.5 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 4 10 ns
Turn-Off Delay Time 14 25 ns

= 50 V, ID = 7 A,

V

DD

= 10 V, R

V

GS

GEN

= 6 Ω
Fall Time 4 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 3.7 nC

= 0 V to 5 V 8 11 nC

GS

V

DD

I

D

= 50 V

= 7 A

Gate to Drain “Miller” Charge 3.6 nC

8 17 ns

13 18 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1i n2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. Starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 12 A, VDD = 72 V, VGS = 10 V.

FDMC86324 Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 40 65 nC

a.

53 °C/W when mounted on a
1 in2 pad of 2 oz copper

V

= 0 V, IS = 7 A (Note 2) 0.81 1.3

GS

= 0 V, IS = 2 A (Note 2) 0.75 1.2

V

GS

= 7 A, di/dt = 100 A/μs

I

F

2

θJC

44 70

is guaranteed by design while R

125 °C/W when mounted on

b.

a minimum pad of 2 oz copper

V

ns

is determined by

θCA

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FDMC86324 N-Channel Power Trench

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

5

10

15

20

25

30

VGS = 6 V

VGS = 10 V

VGS = 5 V

VGS = 5.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 4.5 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15 20 25 30

0

1

2

3

4

5

VGS = 6 V

VGS = 4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 10 V

VGS = 5.5 V

VGS = 5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 7 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TE MPERATURE (

o

C)

45678910

10

20

30

40

50

60

70

80

TJ = 125 oC

ID = 7 A

TJ = 25 oC

V

GS

, GATE TO S OURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

234567

0

5

10

15

20

25

30

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

60

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norm a l i z e d O n-Resist a n c e

vs Drain Current and Gate Voltage

®

MOSFET

Fig u r e 3. N o r maliz e d On- Re s i s tanc e

vs Junction Temperature

FDMC86324 Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Re sistance vs Gate to

Source Voltage

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current

3

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FDMC86324 N-Channel Power Trench

02468101214

0

2

4

6

8

10

ID = 7 A

VDD = 50 V

V

DD

= 25 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 75 V

0.1 1 10 80

10

100

1000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.01 0.1 1 10 30

1

2

3

4

5

6

7

8

9

10

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

5

10

15

20

25

30

Limited by P ackage

R

θJC

= 3 oC/W

V

GS

= 6 V

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

c

, CASE TEMPERATURE (

o

C)

0.01 0.1 1 10 100 500

0.01

0.1

1

10

50

1 s

100 μs

DC

100 ms

10 ms

1 ms

10 s

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS A REA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 125

o

C/W

T

A

= 25

o

C

10-410-310-210

-1

110

100 1000

0.5

1

10

100

1000

VGS = 10 V

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

SINGLE PULSE
R

θJA

= 125

o

C/W

T

A

= 25

o

C

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

J

Capacitance vs Drain

to Source Voltage

®

MOSFET

Figure 9.

Uncl a m p e d I n duct i v e

Switching Capability

FDMC86324 Rev.C

Figure 11.

Forward Bias Safe

Operating Area

Figure 10.

Ma x imu m Cont i nuo u s Dra in

Current v s C ase Temperature

Figure 12.

Sing le Pul se M ax imu m

Power Dissipation

4

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FDMC86324 N-Channel Power Trench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

SINGLE PULSE
R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

®

MOSFET

FDMC86324 Rev.C

5

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FDMC86324 N-Channel Power Trench

Dimensional Outline and Pad Layout

®

MOSFET

FDMC86324 Rev.C

6

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THEREIN, WHICH COVERS THESE PRODUCTS.

FDMC86324 N-Channel Power Trench

®

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

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Counterfeiting of semiconductor parts is a growing problem in the indust ry. All manufactures of semiconductor products are experiencin g counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDMC86324 Rev.C 7

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fairchild
Semiconductor. The datasheet is for reference information only.

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Rev. I48