Page 1
FDMC86320
Bottom
D
D
D
D
S
S
S
G
Top
Pin 1
MLP 3.3x3.3
S
S
S
G
D
D
D
D
N-Channel Power Trench® MOSFET
80 V, 22 A, 11.7 mΩ
Features
Max r
Max r
MSL1 robust package design
100% UIL Tested
RoHS Compliant
= 11.7 mΩ at VGS = 10 V, ID = 10.7 A
DS(on)
= 16 mΩ at VGS = 8 V, ID = 8.5 A
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
December 2011
, fast switching speed and body
DS(on)
FDMC86320 N-Channel Power Trench
Applications
Primary DC-DC Switch
Motor Bridge Switch
Synchronous Rectifier
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 80 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 22
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 60 mJ
Power Dissipation TC = 25 °C 40
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 45
C
= 25 °C (Note 1a) 10.7
A
= 25 °C (Note 1a) 2.3
A
Thermal Characteristics
®
MOSFET
A
W
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC86320 FDMC86320 Power 33 13 ’’ 12 mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev. C
Thermal Resistance, Junction to Case 3.1
Thermal Resistance, Junction to Ambient (Note 1a) 53
°C/W
1
www.fairchildsemi.com
Page 2
FDMC86320 N-Channel Power Trench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 80 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 64 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 56 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.4 3.5 4.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -11 mV/°C
D
V
= 10 V, ID = 10.7 A 9.7 11.7
GS
= 8 V, ID = 8.5 A 11.4 16
GS
= 10 V, ID = 10.7 A, TJ = 125 °C 15 18
V
GS
Forward Transconductance VDS = 10 V, ID = 10.7 A 20 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 353 469 pF
Reverse Transfer Capacitance 12 30 pF
Gate Resistance 0.5 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 816ns
Turn-Off Delay Time 20 35 ns
Fall Time 510ns
Total Gate Charge V
Total Gate Charge 10 nC
Gate to Drain “Miller” Charge 6.9 nC
= 40 V, VGS = 0 V,
V
DS
f = 1 MHz
= 40 V, ID = 10.7 A,
V
DD
V
= 10 V, R
GS
= 0 V to 10 V
GS
V
= 0 V to 8 V 24 34 nC
GS
= 6 Ω
GEN
VDD = 40 V,
I
D
= 10.7 A
1985 2640 pF
15 28 ns
29 41 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev. C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 27 43 nC
SF
SS
DS
DF
G
= 25 °C; N-ch: L = 0.3 mH, IAS = 20 A, VDD = 72 V, VGS = 10 V.
J
V
GS
V
GS
= 10.7 A, di/dt = 100 A/μs
I
F
a. 53 °C/W when mounted on a
2
pa d o f 2 oz co ppe r
1 in
= 0 V, IS = 10.7 A (Note 2) 0.84 1.3
= 0 V, IS = 2 A (Note 2) 0.75 1.2
38 61 ns
is guaranteed by design while R
θJC
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper
SF
SS
DS
DF
G
2
θCA
www.fairchildsemi.com
V
is determined by
Page 3
FDMC86320 N-Channel Power Trench
012345
0
10
20
30
40
50
VGS = 6.5 V
VGS = 5.5 V
VGS = 6 V
VGS = 7 V
VGS = 8 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 1020304050
0
1
2
3
4
5
VGS = 6.5 V
VGS = 6 V
VGS = 7 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
VGS = 5.5 V
VGS = 8 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = 10.7 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
5678910
0
10
20
30
40
TJ = 125 oC
ID = 10.7 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0 .5% MAX
2345678
0
10
20
30
40
50
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
50
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
vs Drain Current and Gate Voltage
N o r m a l i z e d O n - R e s i s t a n c e
®
MOSFET
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev. C
Figure 5. Transfer Characteristics
Figure 4.
O n - R es i s t a n c e vs G a t e t o
Source Voltage
Figure 6.
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
www.fairchildsemi.com
Page 4
FDMC86320 N-Channel Power Trench
0 5 10 15 20 25 30
0
2
4
6
8
10
ID = 10.7 A
VDD = 40 V
V
DD
= 30 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 50 V
0.1 1 10 100
5
10
100
1000
3000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.01 0.1 1 10 50
1
10
30
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
10
20
30
40
50
Limited by Package
V
GS
= 8 V
R
θJC
= 3.1 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.01 0.1 1 10 100 400
0.01
0.1
1
10
100
100 μs
10 ms
10 s
100 ms
DC
1 s
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10-410-310-210
-1
110
100 1000
0.5
1
10
100
1000
2000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
VGS = 10 V
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics
= 25 °C unless otherwise noted
J
Figure 8.
C a p a c i t a n c e v s D r a i n
to Source Voltage
®
MOSFET
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev. C
F ig u re 1 1. F or w ar d B ia s Sa f e
Op
erating Area
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Figure 12.
S i n g l e P u l s e M a x i m u m
Power Dissipation
4
www.fairchildsemi.com
Page 5
FDMC86320 N-Channel Power Trench
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.0005
0.001
0.01
0.1
1
2
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECT ANGULAR PULSE DURATION (sec)
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13.
= 25 °C unless otherwise noted
J
Junction-to-Ambient Transient Thermal Response Curve
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev. C
5
www.fairchildsemi.com
Page 6
Dimensional Outline and Pad Layout
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
A. DOE S NOT CONFORM TO JEDEC
REGISTRATION MO-229
ASME Y14.5M, 1994
0.10 CAB
0.05
C
TOP VIEW
BOTTOM VI EW
RECOMMENDED LAND PATTERN
0.10 C
0.0 8 C
B
A
3.30
3.3 0
0.0 5
0.0 0
0.10 C
2X
2X
0.8 MAX
SIDE VIEW
SEATING
PLANE
0.1 0 C
PIN #1 IDENT
(0. 20)
8
5
1.9 5
0.65
E. DRAWING FILE NAME : MLP08Srev1
PIN#1 QUADRANT
0.40
0.30
41
(8X )
D. LAND PATTERN REC OMMENDATION IS
BASED ON FSC DESIGN ONLY
2.3 2
2.2 2
0.55
0.45
(4X )
1.1 5
0.30
2.05
1.95
0.3 5
R0.15
0.79
FDMC86320 N-Channel Power Trench
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev. C
6
www.fairchildsemi.com
Page 7
TRADEMARKS
tm
®
™
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
Auto-SPM™
AX-CAP™*
®
BitSiC
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
®
®
®
®
®
®
*
®
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptoHiT™
OPTOLOGIC
OPTOPLANAR
®
®
SM
®
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
®
®
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
®
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®
®
®*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
TranSiC
TriFault Detect™
TRUECURRENT
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
®
®
*
FDMC86320 N-Channel Power Trench
®
MOSFET
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2011 Fairchild Semiconductor Corporation
FDMC86320 Rev. C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I60
7
www.fairchildsemi.com
Loading...