Datasheet FDMC86102L Datasheet (Fairchild)

FDMC86102L

G

S

S

S

D
D

D

D

5
6

7

8

3

2

1

4

Bottom

D

D

D

D

S

S

S

G

Top

Pin 1

MLP 3.3x3.3

N-Channel Power Trench® MOSFET

100 V, 18 A, 23 mΩ

Features

 Max r
 Max r
 Low Profile - 1 mm max in Power 33
 RoHS Compliant

= 23 mΩ at VGS = 10 V, ID = 7 A

DS(on)

= 34 mΩ at VGS = 4.5 V, ID = 5.5 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Application

 DC - DC Conversion

December 2010

®

process that has

FDMC86102L N-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC86102L FDMC86102L Power 33 13 ’’ 12 mm 3000 units

©2010 Fairchild Semiconductor Corporation
FDMC86102L Rev.C

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 18

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30
Single Pulse Avalanche Energy (Note 3) 63 mJ
Power Dissipation TC = 25 °C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

A

= 25 °C 30

C

= 25 °C (Note 1a) 7

A

= 25 °C (Note 1a) 2.3

A

1

A

W

°C/W

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FDMC86102L N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 71 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA11.83V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -6 mV/°C

D

V

= 10 V, ID = 7 A 18.9 23

GS

= 4.5 V, ID = 5.5 A 24.9 34

GS

= 10 V, ID = 7 A, TJ = 125 °C 31.9 39

V

GS

Forward Transconductance VDS = 5 V, ID = 7 A 26 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 178 240 pF
Reverse Transfer Capacitance 7.6 15 pF
Gate Resistance 0.5 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 2.2 10 ns
Turn-Off Delay Time 19 34 ns
Fall Time 2.4 10 ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 2.7 nC
Gate to Drain “Miller” Charge 2.3 nC

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

= 50 V, ID = 7 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 4.5 V 7.3 11 nC

GS

GEN

= 6 Ω

V

DD

I

D

= 50 V,

= 7 A

999 1330 pF

7.7 16 ns

15 22 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

is determined with the devi ce m ount ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 11.3 A, VDD = 90 V, VGS = 10 V.

©2010 Fairchild Semiconductor Corporation
FDMC86102L Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 45 72 nC

a) 53 °C/W when mounted on
a 1 in

V

GS

V

GS

= 7 A, di/dt = 100 A/μs

I

F

2

pa d of 2 oz co pper

= 0 V, IS = 7 A (Note 2) 0.81 1.3
= 0 V, IS = 2 A (Note 2) 0.74 1.2

45 72 ns

is guaranteed by design while R

θJC

b) 125 °C/W when mounted on a
minimum pad of 2 oz copper

2

θCA

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V

is determined by

FDMC86102L N-Channel PowerTrench

012345

0

5

10

15

20

25

30

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 3.5 V

VGS = 4.5 V

VGS = 10 V

VGS = 4 V

VGS = 3 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15 20 25 30

0

1

2

3

4

5

VGS = 3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4 V

VGS = 4.5 V

VGS = 3 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 7 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

30

60

90

120

TJ = 125 oC

ID = 7 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

1.0 1.5 2.0 2.5 3.0 3.5 4.0

0

5

10

15

20

25

30

TJ = 150 oC

V

DS

= 5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

30

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

®

MOSFET

Fig ure 3. Norm a lized On Re s ista n ce

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDMC86102L Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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FDMC86102L N-Channel PowerTrench

0481216

0

2

4

6

8

10

ID = 7 A

V

DD

= 75 V

V

DD

= 25 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 50 V

0.1 1 10 100

1

10

100

1000

2000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.01 0.1 1 10 30

1

10

30

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

5

10

15

20

25

30

Limited by p ackag e

V

GS

= 4.5 V

R

θJC

= 3 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

0.01 0.1 1 10 100 500

0.01

0.1

1

10

40

100 us

DC

100 ms

10 ms

1 ms

1s

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 125

o

C/W

T

A

= 25

o

C

10s

10-410-310-210

-1

110

100 1000

0.5

1

10

100

1000

SINGLE PULSE
R

θJA

= 125

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics

= 25 °C unless otherwise noted

J

Figure 8.

Capacitance vs Drain

to Source Voltage

®

MOSFET

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

©2010 Fairchild Semiconductor Corporation
FDMC86102L Rev.C

Figure 11. Forward Bias Safe

Oper

ating Area

Figure 10.

M a x i m u m C o n t i n u o u s D r a i n

Current vs Case Temperature

Figure 12.

Single Pulse Max imum

Power Dissipation

4

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FDMC86102L N-Channel PowerTrench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

SINGLE PULSE
R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PU L SE D U R ATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13.

= 25 °C unless otherwise noted

J

Junction-to-Ambient Transient Thermal Response Curve

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDMC86102L Rev.C

5

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMC86102L N-Channel PowerTrench

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDMC86102L Rev.C

6

www.fairchildsemi.com

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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FDMC86102L N-Channel PowerTrench

®

MOSFET

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any ti me without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I51

©2010 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FDMC86102L Rev.C