Page 1
tm
FDMC8462
N-Channel Power Trench® MOSFET
40V, 20A, 5.8mΩ
Features
Max r
Max r
Low Profile - 1mm max in Power 33
100% UIL Tested
RoHS Compliant
= 5.8mΩ at VGS = 10V, ID = 13.5A
DS(on)
= 8.0mΩ at VGS = 4.5V, ID = 11.8A
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
DC - DC Conversion
March 2008
®
process that has
FDMC8462 N-Channel Power Trench
®
MOSFET
Pin 1
Bottom
S
S
S
G
5
D
D
6
D
7
8
D
D
D
D
D
Top
Power 33
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 20
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 216 mJ
Power Dissipation TC = 25°C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25°C unless otherwise noted
A
= 25°C 64
C
= 25°C (Note 1a) 14
A
= 25°C (Note 1a) 2.0
A
Thermal Characteristics
4
G
S
3
S
2
S
1
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 53
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC8462 FDMC8462 Power 33 13’’ 12mm 3000 units
©2008 Fairchild Semiconductor Corporation
FDMC8462 Rev.C
°C/W
1
www.fairchildsemi.com
Page 2
FDMC8462 N-Channel Power Trench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current VGS = ±20V, V
ID = 250µA, referenced to 25°C 31 mV/°C
= 0V, VDS = 32V, 1 µA
GS
= 0V ±100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 2.0 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDD = 5V, ID = 13.5A 60 S
ID = 250µA, referenced to 25°C -6.6 mV/°C
VGS = 10V, ID = 13.5A 4.7 5.8
VGS = 10V , ID = 13.5A, TJ = 125°C 7.1 9.3
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 545 725 pF
Reverse Transfer Capacitance 80 120 pF
VDS = 20V, VGS = 0V,
f = 1MHz
2000 2660 pF
Gate Resistance f = 1MHz 2.7 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 4 10 ns
Turn-Off Delay Time 27 43 ns
VDD = 20V, ID = 13.5A,
VGS = 10V, R
GEN
= 6Ω
12 21 ns
Fall Time 3 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 6 nC
= 0V to 10V
GS
= 0V to 4.5V 15 21 nC
GS
VDD = 20V,
30 43 nC
ID = 13.5A
Gate to Drain “Miller” Charge 5 nC
mΩVGS = 4.5V, ID = 11.8A 6.4 8.0
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR- 4 mat erial . R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting T
FDMC8462 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 20 32 nC
= 25oC; N-ch: L = 3 mH, IAS = 12A, VDD = 40V, VGS = 10V
J
a.
53°C/W when mounted on a
2
pad of 2 oz copper
1 in
V
= 0V, IS = 13.5A (Note 2) 0.8 1.3
GS
V
= 0V, IS = 1.7A (Note 2) 0.7 1.2
GS
IF = 13.5A, di/dt = 100A/µs
θJC
b.
2
35 57 ns
is guaranteed by design while R
125°C/W when mounted on a
minimum pad of 2 oz copper
V
is determined by
θCA
www.fairchildsemi.com
Page 3
FDMC8462 N-Channel Power Trench
Typical Characteristics T
50
VGS = 10V
40
30
20
, DRAIN CURRENT (A)
10
D
I
0
0.0 0.5 1.0 1.5
Figure 1.
1.8
ID = 13.5A
= 10V
V
1.6
GS
1.4
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
Figu r e 3. Norm a l ized On - R esista n c e
vs Junction Temperature
VGS = 4.5V
VGS = 4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
On-Region Characteristics Figure 2.
T
, JUNCTION TEMPERATURE (
J
= 25°C unless otherwise noted
J
VGS = 3.5V
VGS = 3V
o
C)
5.0
4.5
4.0
VGS = 3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
3.5
VGS = 3.5V
V
= 4V
GS
NORMALIZED
3.0
2.5
2.0
1.5
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
01020304050
I
D
V
= 4.5V
GS
, DRAIN CURRENT(A)
V
= 10V
GS
Norma l i z e d O n - Resistance
vs Drain Current and Gate Voltage
30
25
(mΩ)
ID = 13.5A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
20
15
DRAIN TO
,
10
DS(on)
r
5
SOURCE ON-RESISTANCE
0
246810
V
, GATE TO SO U RCE VOLTAGE (V)
GS
Figure 4.
On-Resis tance vs Gate to
TJ = 125oC
TJ = 25oC
Source Voltage
®
MOSFET
50
40
30
20
, DRAIN CURRENT (A)
10
D
I
FDMC8462 Rev.C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= 5V
DS
TJ = 150oC
TJ = 25oC
TJ = -55oC
0
12345
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
50
V
= 0V
GS
10
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ = 150oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Drain Diode
TJ = 25oC
TJ = -55oC
Forward Voltage vs Source Current
3
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Page 4
FDMC8462 N-Channel Power Trench
Typical Characteristics T
10
ID = 13.5A
8
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
V
0
0 5 10 15 20 25 30 35
Figure 7.
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
30
10
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE(ms)
Figure 9.
Uncl a m p e d I n duct i v e
Switching Capability
V
DD
VDD = 24V
TJ = 125oC
= 25°C unless otherwise noted
J
= 16V
VDD = 20V
TJ = 25oC
400
5000
1000
100
CAPACITANCE (pF)
f = 1MHz
= 0V
V
GS
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
to Source Voltage
75
60
V
= 10V
GS
45
V
= 4.5V
30
, DRAIN CURRENT (A)
D
I
15
Limited by Package
0
25 50 75 100 125 150
Figure 10.
GS
R
= 3oC/W
θJC
T
, CASE TEMPERATURE (
C
o
C)
Max imum C o ntin u ous D r ain
Current vs Case Temperature
C
iss
C
oss
C
rss
40
®
MOSFET
100
10
1
, DRAIN CURRENT (A)
0.1
D
I
0.01
0.01 0.1 1 10 100
FDMC8462 Rev.C
THIS AREA IS
LIMITED BY r
Figure 11.
DS(on)
SINGLE PULSE
= MAX RATED
T
J
θJA
A
= 125
= 25
o
C/W
o
C
R
T
VDS, DRAIN to SOURCE VOLTAGE (V)
Forward Bias Safe
Operating Area
1ms
10ms
100ms
1s
10s
DC
2000
1000
VGS = 10V
100
SINGLE PULSE
R
T
θJA
A
= 25
= 125
o
o
C/W
C
10
), PEAK TRANSIENT POWER (W)
1
PK
P(
0.5
10-410-310-210
Figure 12.
t, PULSE WIDTH (sec)
Si ngl e Pu lse Max imum
-1
110
100 1000
Power Dissipation
4
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Page 5
FDMC8462 N-Channel Power Trench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
-4
10
-3
10
NORMALIZED THERMAL
0.1
θJA
Z
0.01
IMPEDANCE,
0.001
0.0002
= 25°C unless otherwise noted
J
SINGLE PULSE
R
= 125oC/W
θJA
-2
10
t, RECTANGULAR PULSE DURATION (sec)
-1
10
110
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
100 1000
®
MOSFET
FDMC8462 Rev.C
5
www.fairchildsemi.com
Page 6
Dimensional Outline and Pad Layout
FDMC8462 N-Channel Power Trench
®
MOSFET
FDMC8462 Rev.C
6
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Page 7
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
®
ACEx
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
®
EfficentMax™
EZSWITCH™ *
™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
®
®
®
®
®
*
* EZSWITCH™ and FlashWriter
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
®
PDP-SPM™
Power-SPM™
PowerTrench
SM
Programmable Active Droop™
QFET
®
®
QS™
Quiet Series™
RapidConfigure™
Saving our world 1mW at a time™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
The Power Franchise
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TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®
FDMC8462 N-Channel Power Trench
®
MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NO TICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE U NDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND TH E TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
Obsolete Not In Production
FDMC8462 Rev.C
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
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Rev. I34
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