Datasheet FDMC8015L Datasheet (Fairchild)

FDMC8015L

N-Channel Power Trench® MOSFET

40 V, 18 A, 26 mΩ

Features

 Max r
 Max r
 Low Profile - 1 mm max in Power 33
 100% UIL Tested

 RoHS Compliant

= 26 mΩ at VGS = 10 V, ID = 7 A

DS(on)

= 36 mΩ at VGS = 4.5 V, ID = 6 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor
been

especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

's advanced Power Trench

Applications

 Load Switch
 Motor Bridge Switch

April 2011

®

process that has

FDMC8015L N-Channel PowerTrench

®

MOSFET

G

Bottom

D

S

S

D

D

D

D

5

D

6

D

7

8

D

4

3

2
1

S

Top

6

8

1

2

3

5

7

4

MLP 3.3x3.3

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 18

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30
Single Pulse Avalanche Energy (Note 3) 32 mJ
Power Dissipation TC = 25°C 24
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to + 150 °C

= 25 °C unless otherwise noted

A

= 25°C 22

C

= 25°C (Note 1a) 7

A

= 25°C (Note 1a) 2.3

A

Thermal Characteristics

TM

G

S

S

S

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 5.1
Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8015L FDMC8015L Power 33 13’’ 12

©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev.C

°C/W

mm 3000 units

1

www.fairchildsemi.com

FDMC8015L N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 40 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 32 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 36 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA11.83V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -6 mV/°C

D

V

= 10 V, ID = 7 A 19.7 26

GS

= 4.5 V, ID = 6 A 24 36

GS

= 10 V, ID = 7 A, TJ = 125 °C 29 39

V

GS

Forward Transconductance VDD = 5 V, ID = 7 A 30 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 94 125 pF
Reverse Transfer Capacitance 58 90 pF
Gate Resistance 1.2 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g(TOT)
g(TOT)
gs
gd

Turn-On Delay Time
Rise Time 1.9 10 ns
Turn-Off Delay Time 18 33 ns
Fall Time 1.7 10 ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 1.9 nC
Gate to Drain “Miller” Charge 2.5 nC

= 20 V, VGS = 0 V,

V

DS

f = 1 MHz

= 20 V, ID = 7 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 4.5 V 6.6 10 nC

GS

= 6 Ω

GEN

VDD = 20 V,
I

D

= 7 A

710 945 pF

6.3 13 ns

13.6 19 nC

mΩV

®

MOSFET

TM

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1 .5 x 1.5 in . boa rd o f FR- 4 m ateria l. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 8 A, VDD = 36 V, VGS = 10 V.

©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev. C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 8.6 18 nC

a.

V

= 0 V, IS = 7 A (Note 2) 0.84 1.2

GS

= 0 V, IS = 2 A (Note 2) 0.76 1.1

V

GS

= 7 A, di/dt = 100 A/μs

I

F

53 °C/W when mounted on a

2

pad of 2 oz copper

1 in

V

18 33 ns

is guaranteed by design while R

θJC

b.

125 °C/W when mounted on
a minimum pad of 2 oz copper

2

is determined by

θCA

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FDMC8015L N-Channel PowerTrench

0 0.5 1.0 1.5 2.0 2.5

0

5

10

15

20

25

30

VGS = 4.5 V

VGS = 4 V

VGS = 3.5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 3 V

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15 20 25 30

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 4 V

VGS = 3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 3 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

ID = 7 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

20

40

60

80

TJ = 125 oC

ID = 7 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOL TAG E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

1 1.5 2.0 2.5 3.0 3.5 4.0

0

5

10

15

20

25

30

TJ = 150 oC

V

DS

= 5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Normali z e d O n - R esistance

vs Drain Current and Gate Voltage

®

MOSFET

TM

Fig u re 3. Norma l ized O n Res i stan c e

vs Junction Temperature

©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev. C

Figure 5. Transfer Characteristics

Figure 4.

On-R esistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Di ode

Forward Voltage vs Source Current

3

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FDMC8015L N-Channel PowerTrench

0 2 4 6 8 10 12 14

0

2

4

6

8

10

ID = 7 A

VDD = 25 V

V

DD

= 15 V

V

GS

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 20 V

0.1 1 10 40

10

100

1000

2000

f = 1 MHz
V

GS

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

rss

C

oss

C

iss

0.01 0.1 1 10 20

1

10

20

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

0

5

10

15

20

25

Limited by Package

V

GS

= 4.5 V

R

θJC

= 5.1 oC/W

V

GS

= 10 V

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

0.1 1 10 100

0.01

0.1

1

10

50

100 us

1 ms

1 s

10 ms

DC

10 s

100 ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

R

θJA

= 125

o

C/W

T

A

= 25

o

C

10-410-310-210-1110

100 1000

0.5

1

10

100

500

SINGLE PULSE
R

θJA

= 125

o

C/W

T

A

= 25

o

C

P(

PK

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics

= 25 °C unless otherwise noted

J

Figure 8.

Capacitance vs Drain

to Source Voltage

®

MOSFET

TM

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev. C

Figure 11. Forward Bias Safe

Operating Area

Figure 10.

Ma xim um Continuous Drai n

Current vs Case Temperature

Figure 12.

Si ngle P ulse Maxi mum

Power Dissipation

4

www.fairchildsemi.com

FDMC8015L N-Channel PowerTrench

10

-4

10

-3

10

-2

10

-1

110

100 1000

0.001

0.01

0.1

1

SINGLE PULSE
R

θJA

= 125 oC/W

DUTY CYCLE-DESCENDING OR D ER

NORMALIZED THERMAL

IMPEDANCE,

Z

θJA

t, RECTANGULAR PU L SE D U R ATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

2

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

A

Typical Characteristics T

Figure 13.

= 25 °C unless otherwise noted

J

Junction-to-Ambient Transient Thermal Response Curve

®

MOSFET

TM

©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev. C

5

www.fairchildsemi.com

Dimensional Outline and Pad Layout

FDMC8015L N-Channel PowerTrench

®

MOSFET

TM

©2011 Fairchild Semiconductor Corporation
FDMC8015L Rev. C

6

www.fairchildsemi.com

TRADEMARKS

tm

®

tm

tm

The following includes registered and unregistered trad emarks and service marks, owned by Fairchild Semiconductor and/or its gl obal subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

AccuPower™
Auto-SPM™
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Current Transfer Logic™
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ESBC™

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FACT

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FAST
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F-PFS™

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FRFET
Global Power Resource
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MegaBuck™
MICROCOUPLER™
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MicroPak™
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MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptiHiT™
OPTOLOGIC
OPTOPLANAR

®

®

®

PDP SPM™

Power-SPM™
PowerTrench

SM

PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™

Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®*

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™

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The Power Franchise
The Right Technology for Your Success™

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TinyBoost™
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TinyLogic
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TRUECURRENT
μSerDes™

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UHC
Ultra FRFET™
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*

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THEREIN, WHICH COVERS THESE PRODUCTS.

FDMC8015LN-Channel PowerTrench

®

MOSFET

TM

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
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PRODUCT STATUS DEFINITIONS
Definition of Terms

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplement ary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I53

©2011 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FDMC8015L Rev.C