Page 1
FDMA1027P
Dual P-Channel PowerTrench® MOSFET
FDMA1027P Dual P-Channel PowerTrench
May 2010
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features two
independent P-Channel MOSFETs with low on-state
resistance for minimum conduction losses. When
connected in the typical common source configuration,
bi-directional current flow is possible.
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
PIN1
S1
D1 D2
MicroFET 2X2
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
, T
T
J
STG
MOSFET Drain-Source Voltage -20 V
MOSFET Gate-Source Voltage r8V
Drain Current -Continuous (Note 1a)
-Pulsed
Power dissipation
Operating and Storage Junction Temperature Range
G2
D1
= 25°C unless otherwise noted
A
Features
-3.0 A, -20V. R
R
R
Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
RoHS Compliant
Free from halogenated compounds and antimony
oxides
G1 D2
S1
G1
S2
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
= 120 m: @ VGS = -4.5 V
DS(ON)
= 160 m: @ VGS = -2.5 V
DS(ON)
= 240 m: @ VGS = -1.8 V
DS(ON)
1
2
3
D2
-3.0
1.4
0.7
1.8
0.8
-55 to +150
-6
6
5
4
D1
G2
S2
®
MOSFET
A
W
o
C
Thermal Characteristics
R
TJA
R
TJA
R
TJA
R
TJA
Thermal Resistance for Single Operation, Junction-to-Ambient (Note 1a) 86
Thermal Resistance for Single Operation, Junction-to-Ambient (Note 1b) 173
Thermal Resistance for Dual Operation, Junction-to-Ambient 69
Thermal Resistance for Dual Operation, Junction-to-Ambient
(Note 1c)
(Note 1d)
151
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
027 FDMA1027P 7" 8mm 3000 units
©2010 Fairchild Semiconductor Corporation FDMA1027P Rev.D51
o
C/W
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FDMA1027P Dual P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BV
DSS
'T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
'V
GS(th)
'T
J
R
DS(ON)
I
D(on)
g
FS
Drain-Source Breakdown Voltage VGS = 0V, ID = -250PA -20 - - V
Breakdown Voltage Temperature
Coefficient
ID = -250PA,
Referenced to 25°C
- -12 - mV/°C
Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V - - -1 PA
Gate-Body Leakage, VGS = r8V, VDS = 0V - - r100 nA
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = -250PA -0.4 -0.7 -1.3 V
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source On-Resistance
On-State Drain Current VGS = -4.5V, VDS = -5V -20 - - A
Forward Transconductance VDS = -5V, ID = -3.0A - 7 - S
ID = -250PA,
Referenced to 25°C
V
= -4.5V, ID = -3.0A - 90 120
GS
= -2.5V, ID = -2.5A - 120 160
V
GS
= -1.8V, ID = -1.0A - 172 240
V
GS
= -4.5V, ID = -3.0A
V
GS
= 125°C
T
J
- 2 - mV/°C
- 118 160
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance - 80 - pF
Reverse Transfer Capacitance - 45 - pF
V
= -10V, VGS = 0V,
DS
f = 1.0MHz
- 435 - pF
m:
®
MOSFET
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Turn-On Rise Time - 11 19 ns
Turn-Off Delay Time - 15 27 ns
= -10V, ID = -1A
V
DD
= -4.5V, R
V
GS
GEN
= 6:
Turn-Off Fall Time - 6 12 ns
Total Gate Charge
Gate-Source Charge - 0.8 - nC
Gate-Drain Charge - 0.9 - nC
= -10V, ID = -3.0A,
V
DS
= -4.5V
V
GS
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current - - -1.1 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = -1.1 A (Note 2) - -0.8 -1.2 V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge - 6 - nC
= -3.0A, dIF/dt=100A/Ps
I
F
- 9 18 ns
-46nC
-17-ns
FDMA1027P Rev.D52
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FDMA1027P Dual P-Channel PowerTrench
Electrical Characteristics T
Notes:
is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
1: R
TJA
determined by the user's board design.
(a) R
= 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB. For single operation.
TJA
= 173°C/W when mounted on a minimum pad of 2 oz copper. For single operation.
(b) R
TJA
(c) R
(d) R
2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0%
= 69oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB, For dual operation, configured in parallel.
TJA
= 151oC/W when mounted on a minimum pad of 2 oz copper. For dual operation, configured in parallel.
TJA
a) 86oC/W when
mounted on a
2
pad of 2
1 i n
oz copper.
= 25°C unless otherwise noted
A
o
b) 173
C/W when
mounted on a
mini mum pad of
2 oz copper.
is guaranteed by design while R
TJC
o
c) 69
C/W when
mounted on a
2
pad of 2
1 in
oz copper.
is
TJA
o
C/W when
d) 151
mounted on a
minimum pad of
2 oz copper.
®
MOSFET
FDMA1027P Rev.D53
Page 4
Typical Characteristics
FDMA1027P Dual P-Channel PowerTrench
6
VGS = -4.5V
5
4
3
2
, DRAIN CURRENT (A)
D
-I
1
0
00.511.522.5
Figure 1.
1.4
ID = -3.0 A
V
= -4.5V
GS
1.3
1.2
1.1
, NORMALIZED
1
DS(ON)
R
0.9
DRAIN-SOURCE ON-RESIST ANCE
0.8
-50 -25 0 25 50 75 100 125 150
-2.5V
-3.0V-3.5V
, DRAIN-SOURCE VOLTAGE (V)
-V
DS
-2.0V
-1.8V
-1.5V
On-Region Characteristics Figure 2.
T
, JUNCTI ON TEMPERATURE (oC)
J
3
VGS= -1.5V
2.6
2.2
1.8
-1.8V
, NORMALIZED
1.4
DS(ON)
R
1
DRAIN-SOU RCE ON-RESI STANCE
0.6
0123456
-2.0V
-I
, DRAIN CURRENT ( A)
D
-2.5V
-3.0V
-3.5V
-4.5V
On-Resistance Variation with
Drain Current and Gate Voltage
0.28
ID = -1.5A
0.22
0.16
, ON-RESIS TANCE (OHM)
0.1
TA = 25oC
DS(ON)
R
0.04
0246810
TA = 125oC
, GATE TO SOUR CE VOLTAGE (V )
-V
GS
®
MOSFET
Figure 3.
On-Resistance Variation with
Temperature
6
VDS = -5V
5
4
3
2
, DRAIN CURRENT ( A)
D
-I
1
0
00.511.522.5
TA = 125oC
-V
, GATE TO SOURCE VOLTAGE ( V)
GS
-55oC
25oC
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance Variation with
Gate-to-Source Voltage
10
VGS = 0V
1
0.1
TA = 125oC
0.01
0.001
, REVERSE DRAI N CURRENT (A)
S
-I
0.0001
00.20.40.60.811.2
-V
SD
Figure 6.
Body Diode Forward Voltage Variation
25oC
-55oC
, BODY DI ODE FORWARD VOLTAGE ( V)
with Source Current and Temperature
FDMA1027P Rev. D54
Page 5
Typical Characteristics
FDMA1027P Dual P-Channel PowerTrench
5
ID = -3.0A
4
3
2
1
, GATE-SOURCE VOLTAGE (V)
GS
-V
0
012345
Figure 7.
100
10
R
1
, DRAIN CU RRENT (A )
D
0.1
I
SINGLE PULSE
R
0.01
0.01 0.1 1 10 100
Gate Charge Characteristics Figure 8.
LIMIT
DS(ON)
VGS = -4.5V
= 173oC/W
TJA
= 25oC
T
A
V
VDS = -5V
-10V
, GATE CHARGE ( nC)
Q
g
10ms
100ms
1s
10s
DC
, DRAI N-SOURCE VOL TAGE ( V)
DS
-15V
1ms
100us
700
600
500
400
300
CAPACITANCE (pF)
200
100
C
0
0 4 8 121620
C
oss
rss
, DRAIN TO SOURCE V OLTAGE (V)
-V
DS
C
iss
f = 1MHz
= 0 V
V
GS
Capacitance Characteristics
®
MOSFET
Figure 9.
Maximum Safe Operation Area Figure 10. Single Pulse Maximum Power
Dissipation
Thermal characterization performed using the conditions described in Note 1b.
Figure 11.
Transient thermal response will change depending on the circuit board design.
Transient Thermal Response Curve
FDMA1027P Rev. D55
Page 6
Dimensional Outline and Pad Layout
FDMA1027P Dual P-Channel PowerTrench
®
MOSFET
6 FDMA1027P Rev. D5
Page 7
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconductor and/ or its global subsidiaries, and is no t
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
®
®
®
®
*
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
®
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
SM
®
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
®*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
®
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMA1027P Dual P-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b ) support or su stain li fe,
and (c) whose failure to perform when properly used in acco rdance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fai rchild
Semiconductor. The datasheet is for reference information only.
Rev. I48
FDMA1027P Rev. D5
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