Datasheet FDJ1027P Datasheet (Fairchild)

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November 2004

FDJ1027P

P-Channel 1.8V Specified PowerTrench® MOSFET

FDJ1027P

General Description

This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the R properties of the device are optimized for battery power management applications.

and thermal

DS(ON)

Applications

• Battery management/Charger Application

• Load switch

S2

G1

S1

MOSFET Maximum Ratings T

G2

S2

S1

o

=25

C unless otherwise noted

A

Features

• –2.8 A, –20 V R

• Low gate charge, High Power and Current handling

capability

• High performance trench technology for extremely

DS(ON)

low R

• FLMP SC75 package: Enhanced thermal performance in industry-standard package size

4

5

6

= 160 mΩ @ VGS = –4.5 V

DS(ON)

= 230 mΩ @ VGS = –2.5 V

R

DS(ON)

= 390 mΩ @ VGS = –1.8 V

R

DS(ON)

Bottom Drain Contact

3 2 1

Symbol Parameter Ratings Units

V

Drain-Source Voltage –20 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) –2.8 A – Pulsed –12 PD

TJ, T

stg

Power Dissipation for Single Operation (Note 1a) 1.5

Operating and Storage Junction Temperature Range –55 to +150

(Note 1b)

±8

0.9

V

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) 80

5

°C/W

Package Marking and Ordering Information

.G FDJ1027P 7’’ 8mm 3000 units

2004 Fairchild Semiconductor Corporation FDJ1027P Rev C1 (W)

FDJ1027P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics

BV

Drain–Source BreakdownVoltage

DSS

∆BVDSS ∆T

J

I

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

DSS

I

Gate–Body Leakage VGS = ±8 V, VDS = 0 V ±100 nA

GSS

Breakdown Voltage Temperature Coefficient

= 0 V, ID = –250 µA

V

GS

I

= –250 µA, Referenced to 25°C

D

–20 V

–13

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

= VGS, ID = –250 µA

V

DS

I

= –250 µA, Referenced to 25°C

D

VGS = –4.5 V, ID = –2.8 A

= –2.5 V, ID = –2.2 A

V

GS

= –1.8 V, ID = –1.7 A

V

GS

= –4.5 V,ID = –2.8 A,TJ=125°C

V

GS

gFS Forward Transconductance VDS = –5 V, ID = –2.8 A 5 S

–0.4 –0.8 –1.5 V

3

108 163 283 150

160 230 390 238

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 290 pF

iss

C

Output Capacitance 55 pF

oss

C

Reverse Transfer Capacitance

rss

Rg Gate Resistance V

= –10 V, VGS = 0 V,

V

DS

f = 1.0 MHz

29 pF

= 15 mV f = 1.0 MHz 18

GS

mΩ

Switching Characteristics (Note 2)

V

t

Turn–On Delay Time 8 16 ns

d(on)

tr Turn–On Rise Time 13 23 ns t

Turn–Off Delay Time 13 23 ns

d(off)

tf Turn–Off Fall Time Qg Total Gate Charge 3 4 nC Qgs Gate–Source Charge 0.65 nC Qgd Gate–Drain Charge

= –10 V, ID = –1 A,

DD

= –4.5 V, R

V

GS

= –10 V, ID = –2.8 A,

V

DS

= –4.5 V

V

GS

GEN

= 6 Ω

18 32 ns

0.75 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –1.25 A VSD

trr Diode Reverse Recovery Time 14 ns Qrr Diode Reverse Recovery Charge

Drain–Source Diode Forward Voltage

= 0 V, IS = –1.25 A (Note 2) –0.8 –1.2

V

GS

I

= –2.8 A,

F

d

= 100 A/µs

iF/dt

4 nC

V

FDJ1027P Rev C1 (W)

FDJ1027P

Electrical Characteristics T

NOTES:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

a) 80°C/W when

mounted on a 1in2 pad of 2 oz copper (Single Operation).

= 25°C unless otherwise noted

A

b) 140°C/W when mounted

on a minimum pad of 2 oz copper (Single Operation).

FDJ1027P Rev C1 (W)

Dimensional Outline and Pad Layout

FDJ1027P

Top

View

FDJ1027P Rev C1 (W)

Typical Characteristics

FDJ1027P

10

VGS=-4.5V

8

6

4

, DRAIN CURRENT (A)

D

-I

2

0

012345

-3.5V

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

-3.0V

-2.5V

-2.0V

-1.8V

2.6

2.4

VGS=-1.8V

2.2 2

1.8

1.6

, NORMALIZED

1.4

DS(ON)

R

1.2 1

DRAIN-SOURCE ON-RESISTANCE

0.8

-2.0V

-2.5V

-3.0V

-3.5V

-4.0V

0246810

-I

, DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.5 ID = -2.8A

1.4

V

= -4.5V

GS

1.3

1.2

1.1

, NORMALIZED

1

DS(ON)

R

0.9

0.8

DRAIN-SOURCE ON-RESISTANCE

0.7

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.5

0.44

0.38

0.32

0.26

, ON-RESISTANCE (OHM)

0.2

DS(ON)

R

0.14

TA = 25oC

0.08

1.5 2 2.5 3 3.5 4 4.5 5

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

-V

GS

-4.5V

ID = -1.4A

Figure 3. On-Resistance Variation with

Temperature.

5

VDS = -5V

4

3

2

, DRAIN CURRENT (A)

D

-I

1

0

0.511.522.5

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TA = -55oC

125oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS=0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

-V

BODY DIODE FORWARD VOLTAGE (V)

SD,

with Source Current and Temperature.

FDJ1027P Rev C (W)

)

Typical Characteristics

FDJ1027P

5

ID = -2.8A VDS = -5V -10V

4

3

2

1

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

00.511.522.533.5

, GATE CHARGE (nC)

Q

g

-15V

500

400

C

ISS

300

200

CAPACITANCE (pF)

100

0

C

OSS

C

RSS

0 5 10 15 20

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

10ms

100µs

1ms

10

R

LIMIT

DS(ON)

1s

1

VGS = -4.5V

, DRAIN CURRENT (A)

SINGLE PULSE

0.1

D

-I

0.01

= 140oC/W

R

θ

JA

T

= 25oC

A

0.1 1 10 100

, DRAIN-SOURCE VOLTAGE (V)

-V

DS

100ms

DC

10s

10

SINGLE PULSE

8

6

4

2

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

R

f = 1 MHz V

= 140°C/W

θ

JA

= 25°C

T

A

GS

= 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.05

THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.01

0.02

0.01 SINGLE PULSE

R

JA

θ

R

θ

P(pk

T

- TA = P * R

J

Duty Cycle, D = t

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

(t) = r(t) * R

= 140oC/W

JA

t

1

t

2

JA

θ

(t)

JA

θ

/ t

1

2

FDJ1027P Rev C (W)

TRADEMARKS

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CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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

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PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I14