Page 1
52098HA (KT)/41594TH (KOTO) B8-0026 No.4658-1/4
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN4658
FC601
Specifications
Absolute Maximum Ratings at Ta = 25˚C
1:Collector
2:Cathode
3:Anode
4:Emitter
5:Base
SANYO:CP5
Package Dimensions
unit:mm
2105A
[FC601]
Features
· Composed of a Shottky barrier diode and a PNP
transistor with built-in resistors, and contained in one
CP package, resulting in greatly improved circuitboard using efficiency.
· The FC601 is composed of an equivalent chip to the
SB007-03CP and an equivalent chip to the RA104C
(R1=10kΩ, R2=47kΩ).
retemaraPlobmySsnoitidnoCsgnitaRtinU
]RT[
egatloVesaB-ot-rotcelloCV
OBC
05–V
egatloVrettimE-ot-rotcelloCV
OEC
05–V
egatloVesaB-ot-rettimEV
OBE
6–V
tnerruCrotcelloCI
C
001–Am
noitapissiDrotcelloCP
C
002Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
]DBS[
egatloVesreveRkaePevititepeRV
MRR
03V
egatloVegruSesreveRkaePevititeper-noNV
MSR
53V
tnerruCtuptuOegarevAI
O
07Am
tnerruCdrawroFegruSI
MSF
elcyc1,evaweniszH05 2A
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
Marking:601
Electrical Connection
1:Collector
2:Cathode
3:Anode
4:Emitter
5:Base
˚C
˚C
˚C
˚C
Continued on next page.
Page 2
FC601
No.4658-2/4
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
˚C/W
retemaraPlobmySsnotidnoC
sgnitaR
tinU
nimpytxam
]RT[
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V04–=
E
0=1.0–Aµ
tnerruCffotuCrotcelloCI
OEC
V
EC
I,V04–=
B
0=5.0–Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V5–=
C
0=76–88–521–Aµ
niaGtnerruCCDh
EF
V
EC
I,V5–=
C
Am5–=07
tcudorPhtdiwdnaB-niaGf
T
V
EC
I,V01–=
C
Am5–=002zHM
ecnaticapaCtuptuOboCV
BC
zHM1=f,V01–=3.5Fp
egatloVnoitarutaSE-CV
)tas(EC
I
C
I,Am01–=
B
Am5.0–=1.0–3.0–V
egatloVnwodkaerBB-CV
OBC)RB(
I
C
I,Aµ01–=
E
0=05–V
egatloVnwodkaerBE-CV
OEC)RB(
I
C
R,Aµ001–=
EB
=∞ 05–V
egatloVetatS-FFOtupnIV
)ffo(I
V
EC
I,V5–=
C
Aµ001–=6.0–8.0–0.1–V
egatloVetatS-NOtupnIV
)no(I
V
EC
I,V2.0–=
C
Am5–=7.0–0.1–0.2–V
ecnatsiseRtupnI1R70131kΩ
oitaRecnatsiseR2R/1R 312.0
]DBS[
egatloVesreveRV
R
I
R
Aµ02=03V
egatloVdrawroFV
F
I
F
Am07= 55.0V
tnerruCesreveRI
R
VRV51= 5Aµ
ecnaticapaClanimretretnICV
R
zHM1=f,V01=0.3Fp
emiTyrevoceResreveRt
rr
IFI=
R
tiucriCtseTdeificepseeS,Am01= 01sn
ecnatsiseRlamrehTa-jhtR 026
T rr Test Circuit
Page 3
FC601
No.4658-3/4
Page 4
FC601
PS No.4658-4/4
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
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