Page 1
FCA16N60N N-Channel MOSFET
D
G
S
G SD
TO-3PN
FCA Series
FCA16N60N
N-Channel MOSFET
600V, 16A, 0.170Ω
Features
• R
• Ultra low gate charge ( Typ. Qg = 40.2nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
= 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A
DS(on)
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
August 2009
TM
SupreMOS
MOSFET Maximum Ratings
Symbol Parameter FCA16N60N Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
TJ, T
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 48.0 A
Single Pulsed Avalanche Energy (Note 2) 355 mJ
Avalanche Current 5.3 A
Repetitive Avalanche Energy 1.34 mJ
MOSFET dv/dt Ruggedness 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20 V/ns
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TC = 25oC unless otherwise noted*
-Continuous (TC = 25oC) 16.0
-Continuous (TC = 100oC) 10.1
(TC = 25oC) 134.4 W
- Derate above 25oC 1.08 W/oC
300
Thermal Characteristics
Symbol Parameter FCA16N60N Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 0.93
Thermal Resistance, Case to Heat Sink (Typical) 0.24
Thermal Resistance, Junction to Ambient 40
A
o
C
o
C
o
C/WR
©2009 Fairchild Semiconductor Corporation
FCA16N60N Rev. A1
www.fairchildsemi.com1
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCA16N60N FCA16N60N TO-3PN - - 30
FCA16N60N N-Channel MOSFET
Electrical Characteristics
TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
ID = 1mA, Referenced to 25oC - 0.73 - V/oC
VDS = 480V, V
VDS = 480V, V
= 0V - - 10
GS
= 0V, TC = 125oC - - 100
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 - 4.0 V
Static Drain to Source On Resistance VGS = 10V, ID = 8A - 0.170 0.199 Ω
Forward Transconductance VDS = 40V, ID = 8A - 20 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 176 - pF
oss
Q
g(tot)
Q
gs
Q
gd
ESR Equivalent Series Resistance (G-S) Drain Open 2.9 Ω
Input Capacitance
Output Capacitance - 70 95 pF
Reverse Transfer Capacitance - 5 10 pF
VDS = 100V, VGS = 0V
f = 1MHz
- 1630 2170 pF
Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 40 60 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 6.7 - nC
Gate to Drain “Miller” Charge - 12.9 - nC
VDS = 380V, ID = 8A,
VGS = 10V
(Note 4)
- 40.2 52.3 nC
µA
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 15.5 41.0 ns
Turn-Off Delay Time - 60.3 130.6 ns
Turn-Off Fall Time - 20.2 50.4 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 5.3A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD = 380V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 16 A
Maximum Pulsed Drain to Source Diode Forward Current - - 48 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 4.4 - µC
VDD = 380V, ID = 8A
RG = 4.7Ω
(Note 4)
= 0V, I
GS
VGS = 0V, I
= 8A - - 1.2 V
SD
= 8A
SD
dIF/dt = 100A/µs
- 15.8 41.6 ns
- 319 - ns
FCA16N60N Rev. A1 www.fairchildsemi.com2
Page 3
Typical Performance Characteristics
0.1 1 10 20
0.1
1
10
100
*Notes:
1. 250
µµµµ
s Pulse Test
2. TC = 25oC
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
2 4 6 8
0.1
1
10
100
-55oC
150oC
*Notes:
1. VDS = 20V
2. 250
µµµµ
s Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0 10 20 30 40 50
0.1
0.2
0.3
0.4
0.5
0.6
*Notes: T
C
= 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[
Ω
Ω
Ω
Ω
]
,
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
10
100
*Notes:
1. VGS = 0V
2. 250
µµµµ
s Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10 100 600
0
2500
5000
7500
10000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted
)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Notes:
1. VGS = 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 10 20 30 40 50
0
2
4
6
8
10
*Notes: I
D
= 8A
VDS = 120V
VDS = 380V
VDS = 480V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FCA16N60N N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FCA16N60N Rev. A1 www.fairchildsemi.com3
Page 4
FCA16N60N N-Channel MOSFET
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. VGS = 0V
2. ID = 1mA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature
[
o
C
]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. VGS = 10V
2. ID = 8A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature
[
o
C
]
1 10 100 1000
0.01
0.1
1
10
100
20
µµµµ
s
100
µµµµ
s
1ms
10ms
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
DC
25 50 75 100 125 150
0
5
10
15
20
I
D
, Drain Current [A]
TC, Case Temperature [oC]
10
-5
10
-4
10
-3
10
-2
10
-1
1
0.005
0.01
0.1
1
2
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θθθθJC
(t) = 0.93oC/W Max.
2. Duty Factor, D= t1/t
2
3. TJM - TC = PDM * Z
θθθθJC
(t)
0.5
Single pulse
Thermal Response
[
Z
θ
θ
θ
θ
JC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
FCA16N60N Rev. A1 www.fairchildsemi.com4
Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCA16N60N N-Channel MOSFET
FCA16N60N Rev. A1 www.fairchildsemi.com5
Page 6
D U T
V
D S
+
_
D r i v e r
R
G
S a m e T y p e
a s D U T
V
G S
• d v / d t c o n t r o ll e d b y R
G
• I
S D
c o n tr o l l e d b y p u l s e p e r io d
V
D D
L
I
S D
1 0 V
V
G S
( D r i v e r )
I
S D
( D U T )
V
D S
( D U T )
V
D D
B o d y D i o d e
F o r w a r d V o l t a g e D r o p
V
S D
I
F M
, B o d y D i o d e F o r w a r d C u r r e n t
B o d y D io d e R e v e r s e C u r r e n t
I
R M
B o d y D i o d e R e c o v e r y d v / d t
d i/ d t
D =
G a t e P u ls e W id t h
G a t e P u ls e P e r i o d
- - - - - - - - - - - - - - - - - - - - - - - - - -
D U T
V
D S
+
_
D r i v e r
R
G
S a m e T y p e
a s D U T
V
G S
• d v / d t c o n t r o ll e d b y R
G
• I
S D
c o n tr o l l e d b y p u l s e p e r io d
V
D D
LL
I
S D
1 0 V
V
G S
( D r i v e r )
I
S D
( D U T )
V
D S
( D U T )
V
D D
B o d y D i o d e
F o r w a r d V o l t a g e D r o p
V
S D
I
F M
, B o d y D i o d e F o r w a r d C u r r e n t
B o d y D io d e R e v e r s e C u r r e n t
I
R M
B o d y D i o d e R e c o v e r y d v / d t
d i/ d t
D =
G a t e P u ls e W id t h
G a t e P u ls e P e r i o d
- - - - - - - - - - - - - - - - - - - - - - - - - -
D =
G a t e P u ls e W id t h
G a t e P u ls e P e r i o d
- - - - - - - - - - - - - - - - - - - - - - - - - -
FCA16N60N N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCA16N60N Rev. A1 www.fairchildsemi.com6
Page 7
Mechanical Dimensions
FCA16N60N N-Channel MOSFET
TO-3PN
FCA16N60N Rev. A1 www.fairchildsemi.com7
Dimensions in Millimeters
Page 8
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Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
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Semiconductor reserves the right to make changes at any time without notice to improve design.
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Rev. I41
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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