Page 1
FCB20N60F 600V N-CHANNEL FRFET
FCB20N60F
600V N-CHANNEL FRFET
Features
• 650V @ TJ = 150°C
• Typ. Rds(on)=0.15:
• Fast Recovery Type ( trr = 160ns )
• Ultra low gate charge (typ. Qg=75nC)
• Low effective output capacitance (typ. Coss.eff=165pF)
• 100% avalanche tested
• RoHS Compliant
D
December 2008
SuperFET
Description
SuperFETTM is, s proprietary, new generation of high
voltage M OSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
Fairchild'
D
G
TM
G
S
S
Absolute M axim um Ratings
Sym bol Param eter FCB20N60F Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns
P
D
T
J, TSTG
T
L
Drain-Source Voltage 600 V
Drain Current - Continuous (T
Drain Current - Pulsed
Gate-Source voltage r30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 20 A
Repetitive Avalanche Energy (Note 1) 20.8 mJ
Power Dissipation (T
Operating and Storage Temperature Range -55 to +150 qC
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
- Continuous (T
= 25qC)
C
- Derate above 25qC
= 25qC)
C
= 100qC)
C
(Note 1)
(Note 2)
20
12.5
60
690 mJ
208
1.67
300 qC
W/qC
Therm al Characteristics
Sym bol Param eter FCB20N60F Unit
R
TJC
R
* Thermal Resistance, Junction-to-Ambient* 40 qC/W
TJA
R
TJA
* When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction-to-Case 0.6 qC/W
Thermal Resistance, Junction-to-Ambient 62.5 qC/W
A
A
A
W
©200 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
8
FCB20N60F Rev. A
4
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape W idth Quantity
FCB20N60F FCB20N60FTM D2-Pak 330mm 24m 800
FCB20N60F 600V N-CHANNEL FRFET
Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BV
/ 'T
BV
DSS
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, I
VGS = 0V, I
Breakdown Voltage Temperature
DSS
Coefficient
J
Drain-Source Avalanche Breakdown
I
= 250PA, Referenced to 25qC -- 0.6 -- V/qC
D
VGS = 0V, I
Voltage
Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V
VDS = 480V, T
= 250PA, TJ = 25qC 600 -- -- V
D
= 250PA, TJ = 150qC -- 650 -- V
D
= 20A
D
= 125qC
C
-- 700 -- V
--
--
--
--
10
100
PA
PA
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, I
Static Drain-Source
On-Resistance
VGS = 10V, I
Forward Transconductance VDS = 40V, ID = 10A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 1280 1665 pF
f = 1.0MHz
= 250PA 3.0 -- 5.0 V
D
= 10A -- 0.15 0.19 :
D
(Note 4)
-- 17 -- S
-- 2370 3080 pF
Reverse Transfer Capacitance -- 95 -- pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF
eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF
Turn-On Delay Time VDD = 300V, ID = 20A
R
= 25:
Turn-On Rise Time -- 140 290 ns
G
-- 62 135 ns
Turn-Off Delay Time -- 230 470 ns
Turn-Off Fall Time -- 65 140 ns
Total Gate Charge VDS = 480V, ID = 20A
Gate-Source Charge -- 13.5 18 nC
VGS = 10V
Gate-Drain Charge -- 36 -- nC
(Note 4, 5)
-- 75 98 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 20A
dI
/dt =100A/Ps (Note 4)
Reverse Recovery Charge -- 1.1 -- PC
F
-- 160 -- ns
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 10A, VDD = 50V, R
3. I
d 20A, di/dt d1200A/Ps, VDDd BV
SD
4. Pulse Test: Pulse width d 300Ps, Duty Cycle d 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FCB20N60F Rev. A
= 25:, Starting TJ = 25qC
G
4
, Starting T
DSS
= 25qC
J
2 w
ww.fairchildsemi.com
Page 3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
2
10
V
S
1
10
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
G
2
10
1
10
150oC
FCB20N60F 600V N-CHANNEL FRFET
25oC
0
, Drain Current [A]
10
D
I
1
-
10
0
10
* Notes :
1. 250Ps Pulse Test
2. TC = 25oC
1
10
VDS, Drain-Source Voltage [V]
, Drain Current [A]
D
0
I
10
2 4 6 8 1
VGS , Gate-Source Voltage [V]
-55oC
* Note:
1. VDS = 40V
2. 250Ps Pulse Test
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
2
0.4
0.3
= 10V
V
S
G
[:],
0.2
DS(ON)
R
0.1
Drain-Source On-Resistance
.0
0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
* Note : TJ
ID, Drain Current [A]
= 20V
V
S
G
= 25oC
10
1
10
0
0
1
, Reverse Drain Current [A]
DR
I
150oC
25oC
* Notes :
1. VGS = 0V
2. 250Ps Pulse Test
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-Drain Voltage [V]
0
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10000
9000
8000
7000
6000
5000
4000
3000
Capacitance [pF]
2000
1000
0
-
1
10
FCB20N60F Rev. A
C
= Cgs + Cgd (Cds = shorted)
i
ss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
o
ss
* Notes :
1. VGS = 0 V
10
2. f = 1 MHz
1
C
i
ss
C
r
ss
0
10
VDS, Drain-Source Voltage [V]
4
12
V
= 100V
D
1
0
8
V
= 250V
D
S
VDS = 400V
S
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 10 20 30 40 50 60 70 80
* Note : ID
QG, Total Gate Charge [nC]
3 w
= 20A
ww.fairchildsemi.com
Page 4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
FCB20N60F 600V N-CHANNEL FRFET
1.2
3.0
2.5
1.1
2.0
1.0
, (Normalized)
DSS
BV
0.9
* Notes :
1. VGS = 0 V
2. I
Drain-Source Breakdown Voltage
.8
0
-100 -50 0 50 100 150 200
TJ, Junction Temperature [oC]
= 250 PA
D
1.5
, (Normalized)
1.0
DS(ON)
R
Drain-Source On-Resistance
0.5
0.0
-100 -50 0 5
0 100 150 200
TJ, Junction Temperature [oC]
* Notes :
1. VGS = 10 V
2. ID = 20 A
Figure 9-1. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
2
10
1
10
0
10
, Drain Current [A]
D
I
-1
10
-2
10
Operation in This Area
s Limited by R
i
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
0
10
DS(on)
1
1
0
VDS, Drain-Source Voltage [V]
100 Ps
1 ms
10 ms
DC
2
10
3
10
25
20
15
10
, Drain Current [A]
D
I
5
0
25 5
0 75 100 125 150
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
0
10
D =0 .5
0. 2
-1
10
0. 1
0. 05
0. 02
(t), Thermal Response
TJC
Z
-2
0. 01
FCB20N60F Rev. A
10
-
5
10
4
si ng le pu lse
-4
10
t1, S qu are W a ve P u lse D u ratio n [s ec ]
* No tes :
1 . Z
(t) = 0.6oC /W M ax .
TJC
2. Du ty F ac to r, D =t1/t
3. TJM - TC = PDM * Z
P
DM
-3
10
-2
10
-1
10
4 w
2
(t)
TJC
t
1
t
2
0
10
1
10
ww.fairchildsemi.com
Page 5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
FCB20N60F 600V N-CHANNEL FRFET
FCB20N60F Rev. A
Unclamped Inductive Switching Test Circuit & Waveforms
4
5 w
ww.fairchildsemi.com
Page 6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FCB20N60F 600V N-CHANNEL FRFET
FCB20N60F Rev. A
4
6 w
ww.fairchildsemi.com
Page 7
Mechanical Dimensions
FCB20N60F 600V N-CHANNEL FRFET
D2 - PAK
FCB20N60F Rev. A
Dimensions in Millimeters
4
7 w
ww.fairchildsemi.com
Page 8
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
EfficentMax™
EZSWITCH™ *
™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
FPS™
®
®
tm
®
®
®
®
*
®
F-PFS™
* EZSWITCH™ and FlashWriter
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
®
®
®
tm
®
SM
Programmable Active Droop™
®
QFET
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
The Power Franchise
®
TinyBoost™
tm
TinyBuck™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
μSerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FCB20N60F 600V N-CHANNEL FRFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) sup port or sust ain life ,
and (c) whose failure to perform when properly used in accord ance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experi encing counterfeiting of the ir
parts. Customers who inadvertently purchase counterfeit parts experie nce many pr oble ms such as loss o f brand reputat ion , substa ndard p erf ormance , faile d
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild strongly encourages custo mers to purchase Farichild p arts either di rectly from Fairchild or from Authorized Fairchil d
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is
committed to combat this global problem and encourage our customers to do their part in stopping this practi ce by buying direct or from a uthorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FCB20N60F Rev. A4
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I37
www.fairchildsemi.com8
Loading...