Datasheet FCA47N60, FCA47N60-F109 Datasheet (Fairchild)

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET

December 2008

SuperFET

FCH47N60_F133 / FCA47N60 / FCA47N60_F109

600V N-Channel MOSFET Features

• 650V @TJ = 150°C

• Typ. Rds(on)=0.058Ω

• Ultra low gate charge (typ. Qg=210nC)

• Low effective output capacitance (typ. Coss.eff=420pF)

• 100% avalanche tested

• RoHS Compliant

G

D

S

TO-247

FCH Series

GSD

Description

SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been t
duction loss, provide super
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is ver
power conversion in switching mode operation for system min­iaturization and higher efficiency.

TO-3PN

FCA Series

ior switching performance, and with-

ailored to minimize con-

y suitable for various AC/DC

G

TM

D

S

Absolute Maximum Ratings

Symbol Parameter FCH47N60_F133 FCA47N60 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

J, TSTG

T

L

Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25°C)

Drain Current - Pulsed
Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 47 A
Repetitive Avalanche Energy (Note 1) 41.7 mJ

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

- Continuous (T

- Derate above 25°C

= 100°C)

C

(Note 1)

(Note 2)

(Note 3) 4.5 V/ns

47

29.7
141

1800 mJ

417

3.33

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Unit

R

θJC

R

θCS

R

θJA

Thermal Resistance, Junction-to-Case -- 0.3 °C/W
Thermal Resistance, Case-to-Sink 0.24 -­Thermal Resistance, Junction-to-Ambient -- 41.7 °C/W

A
A

A

W

W/°C

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev.B3

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCH47N60_F133 FCH47N60_F133 TO-247 - - 30

FCA47N60 FCA47N60

CA47N60 FCA47N60_F109 TO-3PN - - 30

F

TO-3PN - - 30

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV
/ ΔT

BV

DS

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

C

oss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V

V

= 0V, ID = 250μA, TJ = 150°C -- 650 -- V

GS

Breakdown Voltage Temperature

DSS

Coefficient

J

Drain-Source Avalanche Breakdown
Voltage

Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V

I

= 250μA, Referenced to 25°C -- 0.6 -- V/°C

D

VGS = 0V, ID = 47A

= 480V, TC = 125°C

V

DS

-- 700 -- V

--

--

--

--

1

10
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V
Static Drain-Source

On-Resistance
Forward Transconductance VDS = 40V, ID = 23.5A

Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 3200 4200 pF

= 10V, ID = 23.5A -- 0.058 0.07 Ω

V

GS

(Note 4)

-- 40 -- S

-- 5900 8000 pF

f = 1.0MHz

Reverse Transfer Capacitance -- 250 -- pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 160 -- pF

eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 420 -- pF

Turn-On Delay Time VDD = 300V, ID = 47A

= 25Ω

R

Turn-On Rise Time -- 210 450 ns

G

-- 185 430 ns

Turn-Off Delay Time -- 520 1100 ns
Turn-Off Fall Time -- 75 160 ns
Total Gate Charge VDS = 480V, ID = 47A

V

= 10V

Gate-Source Charge -- 38 -- nC

GS

Gate-Drain Charge -- 110 -- nC

(Note 4, 5)

-- 210 270 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 47A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 47A

/dt =100A/μs (Note 4)

dI

Reverse Recovery Charge -- 25 -- μC

F

-- 590 -- ns

μA
μA

NOTES:

1. Repetitive Rating: Pulse width limited by ma
= 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

2. I

AS

3. I

≤ 47A, di/dt ≤ 200A/μs, VDD ≤ BV

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

ximum junction temperature

, Starting TJ = 25°C

DSS

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

V

GS

Top : 15.0 V

10.0 V

2

10

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

1

10

, Drain Current [A]

D

I

0

10

-1

10

0

10

Notes :∝

1. 250レs Pulse Test
= 25∩

2. T

C

1

10

VDS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Cur

0.20

2

10

150∩

1

10

, Drain Current [A]

D

I

0

10

25∩

-55∩

246810

VGS , Gate-Source Voltage [V]

and Temperatue

Note∝

1. VDS = 40V

2. 250

レs Pulse Test

rent

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET

2

-Resistance

0.15

10

VGS = 10V

0.10

VGS = 20V

0.05

[ヘ ],Drain-Source On

DS(ON)

R

0.00
0 20 40 60 80 100 120 140 160 180 200

Note : T∝J = 25∩

ID, Drain Current [A]

1

10

, Reverse Drain Current [A]

150∩

DR

I

0

10

25∩

Notes :∝

1. VGS = 0V

2. 250

レs Pulse Test

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD , Source-Drain Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Capacitance [pF]

30000

25000

20000

15000

10000

5000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

C

oss

Notes :∝

10

1

1. VGS = 0 V

2. f = 1 MH z

C

iss

C

rss

0

-1

10

0

10

VDS, Drain-Source Voltage [V]

12

10

8

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 50 100 150 200 250

QG, Total Gate Charge [nC ]

VDS = 100V

VDS = 250V

VDS = 400V

Note : I∝D = 47A

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3

3 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

1.2

1.1

1.0

, (Normalized)

BV

DSS

0.9

Notes :∝

1. VGS = 0 V

2. I

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

= 250

D

3.0

2.5

2.0

レA

1.5

, (Normalized)

DS(ON)

1.0

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature [oC]

Notes :∝

1. VGS = 10 V

2. I

= 47 A

D

Figure 9. Safe Operating Area Figure 10. Maximum Drain Current

Operation in This Area
is Limited by R

Notes :∝

1. TC = 25 oC
= 150 oC

2. T

J

3. Single Pulse

DS(on)

1

10

VDS, Drain-Source Voltage [V]

DC

10

2

10

1

10

0

10

, Drain Current [A]

D

I

-1

10

-2

10

0

10

vs. Case Temperature

50

10 ms

2

1 ms

100 us

3

10

40

30

20

, Drain Current [A]

D

I

10

0

25 50 75 100 125 150

TC, Case Temperature [∩ ]

Figure 10. Transient Thermal Response Curve

D=0.5

-1

10

0.2

0.1

0.05

(t), Thermal Response

0.02

ヨJC

-2

Z

10

0.01

-5

10

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3

single pulse

-4

10

t1, Square Wave Pulse Duration [sec]

Notes :∝

1. Z

(t) = 0.3 ∩ /W M a x .

ヨ JC

2. D u ty F a c to r, D = t

3. TJM - TC = PDM * Z

P

DM

-3

10

-2

10

-1

10

1/t2

(t)

ヨ JC

t

1

t

2

0

10

1

10

4 www.fairchildsemi.com

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET

Unclamped Inductive Switching Test Circuit & Waveforms

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3

5 www.fairchildsemi.com

Peak Diode Recovery dv/dt Test Circuit & Waveforms

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3

6 www.fairchildsemi.com

Mechanical Dimensions

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET

TO-247AB

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3

Dimensions in Millimeters

7 www.fairchildsemi.com

Mechanical Dimensions (Continued)

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET

TO-3PN

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3

Dimensions in Millimeters

9 www.fairchildsemi.com

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FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFETFCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET

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Definition of Terms

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I37

FCH47N60_F133 / FCA47N60 / FCA47N60_F109 Rev. B3

10 www.fairchildsemi.com