Datasheet FC21 Datasheet (SANYO)

Ordering number : ENN7021

FC21

TR : NPN Epitaxial Planar Silicon Transistor

FET : N-Channel Silicon Junction FET

FC21

High-Frequency Amplifier ,

AM tuner RF Amplifier Applications

Features

•

The FC21 contains both a 2SK1740 equivalent chip
and a 2SC2812 equivalent chip in the CP package,
thus realizes higher efficiency in device mounting
on the PCB.

Package Dimensions

unit : mm

2122

[FC21]

1.9

0.95 0.95

54

1

0.4

2.9

3

0.60.6

1.6

2

0.8

0.16

2.8

1 : Collector
2 : Gate
3 : Source

1.1

4 : Emitter/Drain
5 : Base

SANYO : CP5

0 to 0.1

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
[FET]
Drain-to-Source Voltage V
Gate-to-Drain Voltage V
Gate Current I
Drain Current I
Allowable Power Dissipation P
[TR]
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current(Pulse) I
Base Current I
Collector Dissipation P
[Common Ratings]
Total Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

Marking : 1C

DSX
GDS

G
D

D

CBO
CEO
EBO

C

CP

B

C

T

40 V

--40 V
10 mA
75 mA

400 mW

55 V
50 V

6V
150 mA
300 mA

30 mA

200 mW

600 mW

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

81001 TS IM TA-1526

No.7021-1/5

FC21

B S

CG

E / D

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

[FET]
Gate-to-Drain Breakdown Voltage V
Gate Cutoff Current I
Cutoff Voltage VGS(off) VDS=10V , ID=100µA --2.0 --3.0 --5.0 V
Drain Current I
Forward Transfer Admittance
Input Capacitance Ciss VDS=10V, VGS=0, f=1MHz 11 pF
Reverse Transfer Capacitance Crss VDS=10V, VGS=0, f=1MHz 2.5 pF
Noise Figure NF VDS=10V, Rg=1kΩ, ID=1mA, f=1kHz 1.5 dB
[TR]
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=6V, f=1MHz 3 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA 0.1 0.5 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA 0.8 1.0 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V

(BR)GDSIG

GSS

DSS

yfs





CBO
EBO

FE

T

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

=--10µA, VDS=0 --40 V

VGS=--20V, VDS=0 --1.0 nA

VDS=10V , VGS=0 40* 75* mA
VDS=10V, VGS=0, f=1kHz 22 30 mS

VCB=35V, IE=0 0.1 µA
VEB=4V, IC=0 0.1 µA
VCE=6V, IC=1mA 135 600
VCE=6V, IC=10mA 100 MHz

=10µA, IE=0 55 V
=1mA, RBE=∞ 50 V

=10µA, IC=0 6 V

Ratings

min typ max

Unit

* : The FC21 is classified by I

Rank JKL
I

DSS

The specifications shown above are for each individual FET or transistor.

80

60

40 to 52 48 to 63 57 to 75

-- mA
D

40

as follows : (unit : mA)

DSS

I

-- V

D

DS

V

GS

--0.5V

[FET]

=0

--1.0V

20

Drain Current, I

--1.5V

--2.0V

0

012345

Drain-to-Source V oltage, V

I

-- V

D

--3.0V

DS

GS

--2.5V

-- V

ITR01960 ITR01961

[FET]

VDS=10V

100

80

Electrical Connection

I

-- V

I

D

D

-- V

80

60

-- mA
D

40

20

Drain Current, I

0

048 2012 16

Drain-to-Source V oltage, V

DS

GS

--3.0V

DS

V

-- V

VDS=10V
I

=60mA

DSS

[FET]

GS

--0.5V

--1.0V

--1.5V

--2.0V

--2.5V

[FET]

=0

100

80

--6 --4--5 --3 --2 --1 0

Gate-to-Source V oltage, V

DSS

I

GS

=75mA

55mA

-- V

40mA

ITR01963

-- mA

60

D

40

Drain Current, I

20

0

25°C

75°C

Ta= --25°C

--6 --5 --4 --3 --2 --1 0

Gate-to-Source V oltage, V

GS

-- V

ITR01964

No.7021-2/5

-- mA

60

D

40

Drain Current, I

20

0

FC21

VGS(off) -- I

-- V

(off)

GS

6

5

4

3

2

Cutoff V oltage, V

--1.0

Drain Current, I

5

3

2

10

7

Forward Transfer Admittance, yfs -- mS

5

354

yfs -- I

y





y

Drain Current, I

Ciss -- V

-- pF

7
5

3

2

fs2(V

fs

1(I

DSS

DSS

GS

=10mA)

D

DSS

DSS

=0)

DS

7543

-- mA

7

-- mA

RDS(on) -- I

DSS

VDS=10V
I

=100µA

DSS

[FET]

6

5

4

(on) -- Ω

3

DS

2

Static Drain-to-Source

On-State Resistance, R

10

100

ITR01965

[FET]

VDS=10V
f=1kHz

100

ITR01967

[FET] [FET]

VGS=0

345 7

100

7
5

3

2

10

7
5

3

Forward Transfer Admittance, yfs -- mS

2

23 57

2

Drain Current, I

yfs -- I

=40mA

I

DSS

23 57

10

Drain Current, I

Crss -- V

DSS

D

DS

-- mA

D

55mA

-- mA

f=1MHz

-- pF

10

7
5

[FET]

ID=10mA
VGS=0

ITR01966

[FET]

VDS=10V
f=1kHz

75mA

100

ITR01968

VGS=0
f=1MHz

100

2

10

7
5

Input Capacitance, Ciss

3
2

1.0

23

10

Drain-to-Source V oltage, V

P

-- Ta

D

-- mW

500

400

D

300

200

100

Allowable Power Dissipation, P

0

0 20 40 60 80 100 160120 140

Ambient Temperature, Ta -- °C

DS

-- V

ITR01981

[FET]

ITR01983

3

2

1.0
7

Reverse Transfer Capacitance, Crss

52357

5

1.0

23 57

Drain-to-Source V oltage, V

10

23 5

-- V

DS

ITR01982

No.7021-3/5

20

50µA

16

-- mA
C

12

8

Collector Current, I

4

0

020 50403010

Collector-to-Emitter Voltage, V

3

2

1000

FE

7
5

45µA

40µA

I

C

35µA

hFE -- I

Ta=75°C

-- V

30µA

CE

25µA

C

20µA

15µA

10µA

CE

FC21

I

[TR] [TR]

IB=0

5µA

-- V

IT03592 IT03593

VCE=6V

240

200

-- mA

160

C

120

80

Collector Current, I

40

0

0 0.2 0.4 0.6 0.8 1.0 1.2

Base-to-Emitter V oltage, V

1000

7
5

-- MHz

3

T

2

-- V

C

BE

25°C

Ta=75°C

f

-- I

T

C

--25°C

BE

VCE=6V

-- V
[TR][TR]

VCE=6V

3

2

DC Current Gain, h

100

7
5

325

0.1

2

10

7
5

3
2

1.0
7
5

Output Capacitance, Cob -- pF

3
2

1.0

250

--25°C

25°C

32325

1.0

10

Collector Current, IC -- mA

Cob -- V

Collector-to-Base Voltage, V

P

CB

573257

10 100

-- Ta

C

CB

100

7
5

Gain-Bandwidth Product, f

3

100

325

2

1.0

573232

10 100

Collector Current, IC -- mA

[TR] [TR]

f=1MHz

5732

-- V

IT03596

3
2

1.0
7

5

(sat) -- V

CE

3
2

0.1
7

5
3

Collector-to-Emitter

Saturation V oltage, V

2

0.01

VCE(sat) -- I

5732

101.0

Collector Current, IC -- mA

[TR]

5732

IT03595IT03594

C

IC / IB=10

573232

100

IT03597

200

-- W
C

150

100

50

Collector Dissipation, P

0

2006040 80 100 140120 160

Ambient Temperature, Ta -- °C

ITR10349

No.7021-4/5

FC21

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of August, 2001. Specifications and information herein are subject
to change without notice.

No.7021-5/5

PS