
 * High case dielectric strength
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load. 
For capacitive load, derate current by 20%.
 = 1 Amp., Irr = 0.25 Amp.
      2 ) Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate.
 * High surge current capability 
 * High reliability 
 * Low reverse current 
 * Low forward voltage drop 
 * Fast switching for high efficiency
0.570(14.50)
0.728(18.50)
0.685(16.70)
1.130(28.70)
0.210(5.30)
0.252(6.40)
0.248(6.30)
0.905(23.0)
0.826(21.0)
0.100(2.50)
φ
0.090(2.30)
 * Case : Molded plastic with heatsink integrally 
        mounted in the bridge encapsulation 
 * Epoxy : UL94V-O rate flame retardant 
 * Terminals : plated .25" (6.35 mm). Faston 
 * Polarity : Polarity symbols marked on case 
 * Mounting position : Bolt down on heat-sink with 
     silicone thermal compound between bridge 
     and mounting surface for maximum heat 
     transfer efficiency.
0.658(16.70)
0.032(0.81)
0.310(7.87)
Metal Heatsink
Dimensions in inches and ( millimeters )
 * Weight : 17.1 grams
RATING
  Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts 
  Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts 
  Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts 
  Maximum Average Forward Current Tc = 55 °C IF(AV) 25 Amps. 
  Peak Forward Surge Current Single half sine wave
  Superimposed on rated load (JEDEC Method) IFSM 300 Amps. 
  Current Squared Time at t < 8.3 ms. 
  Maximum Forward Voltage drop per Diode at IF = 12.5 Amps. VF 1.3 Volts 
  Maximum DC Reverse Current     Ta = 25 °C IR 10 µA 
  at Rated DC Blocking Voltage      Ta = 100 °C IR(H) 200 µA 
  Maximum Reverse Recovery Time (Note 1) Trr 150 250 500 ns 
  Typical Thermal Resistance per diode (Note 2) RθJC 1.45 °C/W 
  Operating Junction Temperature Range TJ  - 50 to + 150 °C 
  Storage Temperature Range TSTG  - 50 to + 150 °C
SYMBOL
I2t
375
UNIT
A2S
F
R
UPDATE : APRIL 21, 1998

  RATING AND CHARACTERISTIC CURVES ( FBR2500 - FBR2510 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω 10 Ω
D.U.T.
50 Vdc
(approx)
1 Ω
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
        2. Rise time = 10 ns max., Source Impedance = 50 ohms.
        3. All Resistors = Non-inductive Types.
OSCILLOSCOPE
( NOTE 1 )
PULSE
GENERATOR
( NOTE 2 )
Trr
SET TIME BASE FOR 50/200 ns/cm
FIG.2 - DERATING CURVE FOR OUTPUT FIG.3 - MAXIMUM NON-REPETITIVE PEAK 
      RECTIFIED CURRENT       FORWARD SURGE CURRENT
25
20
15
10
CURRENT, AMPERES
5
AVERAGE FORWARD OUTPUT 
60Hz RESISTIVE OR INDUCTIVE LOAD
    0 25 50 75 100 125 150 175      1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, ( °C)
300
240
180
120
CURRENT, AMPERES
60
PEAK FORWARD SURGE 
NUMBER OF CYCLES AT 60Hz
Tc = 55 °C
FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.5 - TYPICAL REVERSE CHARACTERISTICS
     PER DIODE       PER DIODE
100 10
TJ = 100 °C
10
1.0 0.1
Pulse Width = 300 µs
0.1
2% Duty Cycle
TJ = 25 °C
 FORWARD CURRENT, AMPERES
1.0
TJ = 25 °C
0.01
 REVERSE CURRENT, MICROAMPERES
80
100 1400 20 40 60 120
PERCENT OF RATED REVERSE
 VOLTAGE, (%)
0.01 
    0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
 FORWARD VOLTAGE, VOLTS