
 * High case dielectric strength
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load. 
For capacitive load, derate current by 20%.
 = 1 Amp., Irr = 0.25 Amp.
      2 ) Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.
 * High surge current capability 
 * High reliability 
 * Low reverse current 
 * Low forward voltage drop 
 * Fast switching for high efficiency 
 * Ideal for printed circuit board
 * Case : Molded plastic with heatsink integrally 
        mounted in the bridge encapsulation 
 * Epoxy : UL94V-O rate flame retardant 
 * Terminals : plated .25" (6.35 mm). Faston 
 * Polarity : Polarity symbols marked on case 
 * Mounting position : Bolt down on heat-sink with 
     silicone thermal compound between bridge 
     and mounting surface for maximum heat 
     transfer efficiency. 
 * Weight : 17.1 grams
FAST RECOVERY
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
0.685(16.70)
0.618(15.70)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
0.905(23.0)
0.826(21.0)
1.130(28.70)
1.120(28.40)
0.100(2.50)
φ
0.090(2.30)
RATING
  Maximum Recurrent Peak Reverse Voltage V 
  Maximum RMS Voltage V 
  Maximum DC Blocking Voltage V 
  Maximum Average Forward Current Tc = 55 °C I
SYMBOL
RRM
RMS
DC
F(AV)
50 100 200 400 600 800 1000 Volts 
35 70 140 280 420 560 700 Volts 
50 100 200 400 600 800 1000 Volts
15 Amps. 
  Peak Forward Surge Current Single half sine wave 
  Superimposed on rated load (JEDEC Method) I 
  Current Squared Time at t < 8.3 ms. 
  Maximum Forward Voltage drop per Diode at IF = 7.5 Amps. V 
  Maximum DC Reverse Current     Ta = 25 °C I 
  at Rated DC Blocking Voltage      Ta = 100 °C I
FSM
I2t
F
R
R(H)
300 Amps. 
375
1.3 Volts 
10
200 
  Maximum Reverse Recovery Time (Note 1) Trr 150 250 500 ns 
  Typical Thermal Resistance per diode (Note 2) 
  Operating Junction Temperature Range T 
  Storage Temperature Range T
F
R
RθJC
J
STG
1.9
 - 50 to + 150
 - 50 to + 150
UNIT
A2S
A
µ
A
µ
C/W
°
C
°
C
°

  RATING AND CHARACTERISTIC CURVES ( FBR1500 - FBR1510 )
 REVERSE CURRENT, MICROAMPERES
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 
Ω
50 Vdc
(approx)
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
         2. Rise time = 10 ns max., Source Impedance = 50 ohms.
         3. All Resistors = Non-inductive Types.
D.U.T.
1 
Ω
10 
Ω
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
Trr
SET TIME BASE FOR 50/100 ns/cm
FIG.2 - DERATING CURVE FOR OUTPUT FIG.3 - MAXIMUM NON-REPETITIVE PEAK 
      RECTIFIED CURRENT       FORWARD SURGE CURRENT
300
240
180
120
CURRENT, AMPERES
60Hz RESISTIVE OR INDUCTIVE LOAD
    0 25 50 75 100 125 150 175      1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, ( °C)
CURRENT, AMPERES
PEAK FORWARD SURGE 
60
NUMBER OF CYCLES AT 60Hz
Tc = 55 °C
100 10
10
1.0 0.1
0.1
 FORWARD CURRENT, AMPERES
0.01 
    0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.5 - TYPICAL REVERSE CHARACTERISTICS 
       PER DIODE       PER DIODE
Pulse Width = 300 µs
2% Duty Cycle
TJ = 25 °C
1.0
0.01
TJ = 100 °C
TJ = 25 °C
80
100 1400 20 40 60 120
PERCENT OF RATED REVERSE 
VOLTAGE, (%)
 FORWARD VOLTAGE, VOLTS