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Magneto-Resistance Element
For the availability of this product, please contact the sales office.
Description
The DM-111A is a highly sensitive magnetic
resistance element, composed of an evaporated
ferromagnetic alloy on a silicon substrate. The
element can be used for detection of rotational
speed and for detection of angle of rotation and as a
detection of position.
Features
• Low power consumption
38µW (Typ.) at VCC=5V
• Low magnetic field and high sensitivity
75mVp-p (Typ.) at VCC=5V
and H=4000A/m
• High reliability
Ensured through silicon nitride protective filming
DM-111A
M-102 (Plastic)
Absolute Maximum Ratings (Ta=25°C)
• Supply voltage VCC 10 V
• Operating temperature Topr –40 to +80 °C
• Storage temperature Tstg –50 to +100 °C
Recommended Operating Condition 5V
Electrical Characteristics (Ta=25°C)
Item Symbol Condition Min. Typ. Max. Unit
Total resistance
Midpoint potential
Output voltage
RT
VC
VO
H=4000A/m, θ=45°
VCC=5V , H=4000A/m
Revoiving magnetic field
VCC=5V , H=4000A/m
Revoiving magnetic field
500
2.47
30
650
2.50
75
800
2.53
kΩ
V
mVp-p
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E94706A5X-TE
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Equivalent Circuit
RA RB
1
23
Introduction
1) Power supplying pin output pin
111A
H
θ
max
RA RB
123
min
DM-111A
RA : Resistance reduces as the
magnetic field revolves.
RB : Resistance increases as the
magnetic field revolves.
12 3
RA
RB
2) Sensitive direction vs. Midpoint potential
Midpoint potential
CC
V
2
Hs
H
1
2
3
a
b
VCC
c
d
b
a
e
d
Direction of Magneticflux
e
Incidence
Sensitive
Non-sensitive
Direction of Magneticflux
Incidence
Useful Region
c
Changes occur to the output voltage at the saturation region
of V-H curve according to the direction of magnetic flux.
These changes provide for the operation.
• With one rotation of magnetic flux, signals for 2 periods are
obtained.
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3) 0° Biasing magnetic field
(Switching use)
DM-111A
Sensitive
4) 45° Biasing magnetic field
(Analog use)
Biasing
V
H
V
Magnet
Biasing Magnetic Field
Detected Magnetic Field
1
2
3
Sensitive
Non-sensitive
+
Output
GND
Biasing
Magnet
V
H
Biasing Magnetic Field
Detected Magnetic Field
Non-sensitive
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Applications
AAA
1. Detection of revolution
DM-111A
N
S
2. Position detecting
S
N
3. Angular detection of rotating wheel
N
S
N
N
S
N
S
N
S
S
N
N
S
S
N
N
4. Readind out of analog value
5. Position detecting of revolving element
N
Magnetic conductors
Electric
current
Electric
current
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Circuits
A
A
2), 3), 5)
DM-111A
S
Moving
Direction
(X-derection)
1), 2), 3), 5)
Moving
Direction
(X-derection)
Vcc
r
N
1
1
3
2
3
Vcc
2
1
r2
1
r
r2
Differential
Amplifier
Differenntial
Amplifier
Output
X
Output
X
Biasing Magnet
Bridge Circuits
SONY
111A
Output
By coupling 2 pieces back to back and sticking item
together in a bridge, the output voltage is doubled.
How to make a Biasing Magnetic Field
• Stick a rubber of ferrite biasing magemt
• Position an element between the poles of the permanent magnet.
(Biasing Magnet)
SONY
111A
Notes on Application
• Excute the solder of the lead line within 10 seconds at a temperature below 260°C
• To fix the ELEMENTS: When glue is used, DO NOT apply mechanical stress to the elements.
• Do not use this element in the dewy condition.
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Example Representative Characteristics
DM-111A
Midpoint potential vs. Magnetic field Intensity
2.55
2.54
2.53
2.52
2.51
2.50
2.49
Midpoint potential (V)
2.48
C
V
2.47
2.46
2.45
H-Revoluing magnetic field intensity (Oe)
Output voltage vs. Magnetic fiels Intensity
100
80
60
40
Output voltage (mVp-p)
O
V
20
Midpoint potential vs. Magnetic-flux Incidence
2.55
VCC=5V
Ta=25˚C
111A
GND
CC
V
2.54
2.53
2.52
2.51
1.VCC=5V
2. Output
3. GND
=4000A/m
H
Ta=25˚C
2.50
2.49
θ
111A
GND
CC
V
Midpoint potential (V)
2.48
C
V
2.47
111A
1 2 3
2.46
10000 200000
2.45
0
45 90 135 180
225
θ-Direction of magnetic-flux Incidence (deg)
Total resistance, output voltage vs. Temperature
100
900
90
VCC=5V
Ta=25˚C
80
RT
800
70
60
VO
700
50
40
30
Output voltage (mVp-p)
o
V
20
H=4000A/m
(Revolving magnetic fiels)
600
500
Total resistance (kΩ)
T
R
0
10000 200000
H-Revolving magnetic field intensity (Oe)
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10
0
–50 –25 0 25 50 75 100 125 150
Ta-Ambient temperature (˚C)
400
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Package Outline Unit : mm
DM-111A
M-102
0.4
0.5 ± 0.2
1.2
7.0 ± 0.4
2.54
2.0 ± 0.3
1.0
6.3 ± 0.4
1.7
6.0 ± 1.0
0.25 ± 0.1
5.08
SONY CODE
EIAJ CODE
JEDEC CODE
M-102
PACKAGE WEIGHT
0.24g
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