Datasheet CPH3409 Datasheet (SANYO)

Ordering number : ENN7123

CPH3409

N-Channel Silicon MOSFET

CPH3409

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Package Dimensions

unit : mm

2152A

[CPH3409]

2.9

0.4

3

1.6 0.60.6

1

2

1.9

0.15

2.8

0.2

0.05

1 : Gate
2 : Source
3 : Drain

SANYO : CPH3

Specifications

0.9

0.7 0.2

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 20 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.2 W

30 V

±10 V

5A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs



RDS(on) ID=3A, VGS=4V 32 42 mΩ
RDS(on) ID=1A, VGS=2.5V 40 56 mΩ

=1mA, VGS=0 30 V
VDS=30V, VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=3A 6.3 9 S



Marking : KJ Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1501 TS IM TA-3080

No.7123-1/4

CPH3409

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 630 pF
Output Capacitance Coss VDS=10V , f=1MHz 125 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 70 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 45 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=4V, ID=5A 7.9 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=5A 0.9 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=5A 1.7 nC
Diode Forward Voltage V

SD

See specified Test Circuit. 75 ns

r

See specified Test Circuit. 68 ns

f

IS=5A, VGS=0 0.8 1.2 V

Ratings

min typ max

Unit

Switching Time Test Circuit

V

IN

4V

0V

V

IN

PW=10µs
D.C .≤1%

G

P.G

5

4.0V

3.0V

4

-- A
D

3

2

Drain Current, I

1

0

0

0.2

Drain-to-Source V oltage, V

100

90

80

70

(on) -- mΩ

60

DS

50

40

30

20

Static Drain-to-Source

On-State Resistance, R

10

0

0246810

3A

ID=1A

Gate-to-Source V oltage, V

50Ω

I

D

2.5V

2.0V

1.5V

0.4 0.6 0.8 1.00.30.1 0.5 0.7 0.9

R

(on) -- V

DS

VDD=15V

-- V

D

DS

ID=3A
RL=5Ω

S

DS

GS

GS

V

OUT

CPH3409

V

GS

-- V

Ta=25°C

-- V

=1.0V

IT03816

IT03818

I

-- V

8

VDS=10V

7

6

-- A

5

D

4

3

Drain Current, I

2

1

0

0 0.8 1.0 1.2 1.4 1.60.2 0.4 0.6 1.8 2.0

D

Gate-to-Source V oltage, V

80

70

60

(on) -- mΩ

50

DS

40

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

RDS(on) -- Ta

=1A, V

I

D

=3A, V

I

D

GS

GS

GS

Ta=75°C

=2.5V

=4.0V

- -25°C

GS

Ambient Temperature, Ta -- °C

Ta= --25°C

25°C

-- V

No.7123-2/4

°C

75

25°C

IT03817

IT03819

3

VDS=10V

2

10

7
5

3
2

1.0
7
5

3
2

Forward Transfer Admittance, yfs -- S

0.1

23 57 23 57

0.01 0.1

yfs -- I

Ta= --25°C

Drain Current, I

7

VDD=15V

Switching Time, SW Time -- ns

5

3
2

100

7
5

3
2

10

7
5

4V

VGS=

0.1 1.0

23 57

SW Time -- I

t

f

Drain Current, I

10

VDS=10V

9

ID=5A

8

-- VAllowable Power Dissipation, P

7

GS

6

5

4

3

2

Gate-to-Source V oltage, V

1
0

0246813579

VGS -- Qg

Total Gate Charge, Qg -- nC

P

1.4

D

75

t

25°C

°C

(off)

d

D

1.0

-- A

D

D

t

r

t

(on)

d

23 57

-- A

D

-- Ta

23 57

IT03820

IT03822

IT03824

CPH3409

10

1.0

I

-- V

F

25°C

Ciss

SD

--25°C

SD

-- V

DS

10

VGS=0

7
5

3
2

-- A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01

0.3 0.50.4 0.6 0.7 0.8 1.00.9

Ta=75°C

Diode Forward V oltage, V

1000

7
5

3

2

Ciss, Coss, Crss -- V

Coss

100

Ciss, Coss, Crss -- pF

7
5

3

0 5 10 15 20 25 30

Drain-to-Source V oltage, V

5
3

I

=20A

DP

2

10

7

I

=5A

D

5
3

-- A

2

D

1.0
7
5

3
2

0.1

Drain Current, I

7
5

3
2

0.01

0.01 1.0 10

Operation in this
area is limited by RDS(on).

Ta=25°C
Single pulse
Mounted on a ceramic board(900mm

23 57 23 57 23 57 23 5

0.1

Drain-to-Source V oltage, V

Crss

A S O

DS

10ms

100ms

DC operation

2

✕0.8mm)

-- V

DS

-- V

f=1MHz

<10µs

100µs

1ms

IT03821

IT03823

IT03825

1.2

-- W
D

1.0

0.8

0.6

0.4

0.2

0020 40

Mounted on a ceramic board(900mm

2

✕0.8mm)

60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT03826

No.7123-3/4

CPH3409

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.

No.7123-4/4

PS