Datasheet CPH5602 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6368

CPH5602

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

· Composite type with 2 MOSFETs contained in a
single package, facilitaing high-density mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : FB

SSD
SSG

D

PD

D

SSD
SSG

R

)no(SD

R

)no(SD

Package Dimensions

unit:mm

2168

345

0.40.95

0.4

[CPH5602]

2.8

1.6 0.60.6

0.2

0.9

0.7

0.15

0.2

0.05

1 : Drain1
2 : Drain2
3 : Gate2
4 : Source
5 : Gate1
SANYO : CPH5

sgnitaR

nimpytxam

Continued on next page.

02V
01±V

4.1A

9.0W

2.9

12

WP ≤ elcycytud,sµ01 ≤ %16.5A

Mounted on a ceramic board (600mm2×0.8mm) 1unit

I

V,Am1=

SSD)RB(

D

V
V
V

)ffo(SG

1I

D

2I

D

SD
SG
SD

SD
SD
SD

0=02V

SG

V,V02=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

Am007=8.15.2S

D
V,Am007=

V4=002062mΩ

SG

V,Am004=

V5.2=062063mΩ

SG

zHM1=f,V01=09Fp
zHM1=f,V01=06Fp
zHM1=f,V01=82Fp

˚C
˚C

tinU

31000TS (KOTO) TA-2488 No.6368-1/4

CPH5602

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A4.1=

0=9.02.1V

SG

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A4.1=6Cn
A4.1=1Cn
A4.1=2Cn

tinU

Electrical Connection

G1

2.0

1.8

1.6

1.4

–A

1.2

D

1.0

0.8

0.6

Drain Current, I

0.4

0.2

0

0

500

450

400

–mΩ

350

300

DS(on)

ID=400mA

250

200

150

100

Static Drain-to-Source

On-State Resistance, R

50

0

01 23456

S

8.0V

6.0V

10.0V

0.2

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

700mA

Gate-to-Source Voltage, V

G2

D2D1

I

-- V

D

4.0V

3.0V

DS

2.5V

2.0V

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

GS

78910

–V

GS

VGS=1.5V

IT01074

Ta=25°C

IT01076

Switching Time Test Circuit

V

IN
4V
0V

V

IN

PW=10µs
D.C.≤1%

P.G

4.0

VDS=10V

3.5

3.0

–A

2.5

D

2.0

1.5

Drain Current, I

1.0

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

400

350

–mΩ

300

250

DS(on)

200

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

- -60

--40 --20 0 20 40 60 80 100 120 160140

G

50Ω

I

Gate-to-Source Voltage, VGS–V

RDS(on) -- Ta

=400mA, V

I

D

I

D

Ambient Temperature, Ta – ˚C

VDD=10V

ID=700mA

RL=14.3Ω

D

S

-- V

D

=700mA, V

GS

GS

CPH5602

°C

Ta=--25

75°C

=2.5V

=4.0V

GS

V

OUT

25°C

IT01075

IT01077

No.6368-2/4

y

fs|–S

Forward Transfer Admittance, |

1000

Switching Time, SW Time – ns

V
–

GS

Gate-to-Source Voltage, V

100

1.0

1.0

0.1

1.2

10

7
5

3
2

7
5

3
2

0.01

7
5

3
2

7
5

3
2

10

7
5

3
2

10

9

8

7

6

5

4
3

2

1
0

23 57

0.1

VDS=10V
ID=1.4A

0

yfs -- I

°C

Ta=--25

°C

75

2 3 57 2 3 57

0.1

Drain Current, ID–A

SW Time -- I

td(off)

td(on)

23 57

1.0

Drain Current, ID–A

VGS -- Qg

Total Gate Charge, Qg – nC

P

-- Ta

D

D

VDS=10V

25°C

1.0

D

VDD=10V
VGS=4V

t

r

t

f

23 57

CPH5602

10

IT01078

10

IT01080

645123

IT01082

I

-- V

F

10

7
5

3
2

1.0
7

–A

5

F

3
2

0.1
7
5

3
2

0.01

Forward Current, I

7
5

3
2

0.001
0 0.3 0.6 0.9 1.2 1.5

Ta=75°C

°C

25

SD

°C

--25

Diode Forward Voltage, VSD–V

Ciss, Coss, Crss – pF

1000

100

7
5

3
2

7
5

3
2

0102

Ciss, Coss, Crss -- V

46

82010 12 14 16 18

DS

Ciss
Coss

Crss

Drain-to-Source Voltage, VDS–V

10

1.0

–A

D

,I

0.1

Drain Current

0.01

I

7
5

3
2

7
5

3
2

=5.6A

DP

I

=1.4A

D

Operation in
this area is
limited by RDS(on).

7
5

Ta=25

°C

Single pulse

3
2

1unit

Mounted on a ceramic board (600mm

23 57 23 57 23 57

0.1

A S O

1ms

10ms

100ms

DC operation

2

×0.8mm)

1.0 10 100

Drain-to-Source Voltage, VDS–V

f=1MHz

100µs

V

GS

IT01079

IT01081

IT01083

= 0

1.0

–W

D

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0020 40

Mounted on a ceramic board (600mm

2

×0.8mm) 1unit

60

80 100 120

Ambient Temperature, Ta – ˚C

140 160

IT01084

No.6368-3/4

CPH5602

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6368-4/4