Datasheet CPH3408 Datasheet (SANYO)

Ordering number : ENN6998

CPH3408

N-Channel Silicon MOSFET

CPH3408

Ultrahigh-Speed Switching Applications

Features

•

Low ON-state resistance.

• Ultrahigh-speed switching.

•

4V drive.

Package Dimensions

unit : mm

2152A

[CPH3408]

2.9

0.4

3

1.6 0.60.6

1

2

1.9

2.8

0.15

1 : Gate

0.2

0.05

2 : Source
3 : Drain

0.9

Specifications

0.7 0.2

SANYO : CPH3

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 20 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.2 W

30 V

±20 V

5A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=3A, VGS=10V 33 43 mΩ
RDS(on)2 ID=1A, VGS=4V 48 68 mΩ

=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=3A 4.5 6.5 S

Marking : KH Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62001 TS IM TA-3079

No.6998-1/4

CPH3408

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V, f=1MHz 480 pF
Output Capacitance Coss VDS=10V, f=1MHz 130 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 70 pF
Turn-ON Delay Time td(on) See specified Test Circuit 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 36 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=5A 11 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=5A 1.0 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=5A 2.0 nC
Diode Forward Voltage V

SD

See specified Test Circuit 64 ns

r

See specified Test Circuit 45 ns

f

IS=5A, VGS=0 0.8 1.2 V

Switching Time Test Circuit

10V

0V

PW=10µs
D.C.≤1%

V

IN

V

IN

VDD=15V

ID=3A
RL=5Ω

D

G

V

OUT

Ratings

min typ max

Unit

P.G

5.0

4.5

4.0

3.5

-- A
D

3.0

2.5

2.0

1.5

Drain Current, I

1.0

0.5

4.0V

3.0V

6.0V

10.0V

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source V oltage, V

120

100

RDS(on) -- V

I

D

50Ω

-- V

DS

2.5V

DS

GS

S

-- V

CPH3408

=2.0V

V

GS

IT03479

Ta=25°C

I

-- V

-- A

6

VDS=10V

5

4

D

GS

D

3

2

Drain Current, I

1

°C

Ta=75

°C

--25

25°C

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

120

100

Gate-to-Source V oltage, V

RDS(on) -- Ta

GS

-- V

IT03480

80

(on) -- mΩ

DS

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

02468101214161820

ID=1A

3A

Gate-to-Source V oltage, V

GS

-- V

IT03481

80

(on) -- mΩ

DS

=3A, V

GS

GS

=4V

=10V

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

I

D

I

D

=1A, V

Ambient Temperature, Ta -- °C

IT03482

No.6998-2/4

10

VDS=10V

7
5

3
2

1.0

7
5

3
2



Ta= --25

25°C

C

°

D

°C

75

y

fs -- I

Forward Transfer Admittance, yfs -- S

0.1

23 57 23 57

1000

7
5

3
2

100

7
5

3
2

10

7
5

Switching Time, SW Time -- ns

3
2

1.0

10

9

8

-- V

7

GS

6

5

4

3

2

Gate-to-Source V oltage, V

1
0

23 57

0.1

VDS=10V
ID=5A

0123456789101112

23 57

0.1

Drain Current, I

SW Time -- I

t

(off)

d

t

f

t

r

1.0

Drain Current, I

VGS -- Qg

1.00.01

-- A

D

D

td(on)

23 57

-- A

D

VDD=15V
VGS=

Total Gate Charge, Qg -- nC

P

-- Ta

1.4

D

CPH3408

10

IT03483

10V

1.0

IT03485

IT03487

I

-- V

F

25°C

Ciss

--25°C

SD

SD

-- V

DS

10

VGS=0

7
5

3
2

-- A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

Ta=75°C

Diode Forward V oltage, V

1000

7
5

3
2

Ciss, Coss, Crss -- V

Coss

100

A S O

23 57

Crss

DS

<10µs

10ms

100ms

DC operation

2

✕0.8mm)

23 57

1.0 10

DS

-- V

1ms

-- V

7
5

Ciss, Coss, Crss -- pF

3
2

10

0 5 10 15 20 25 30

Drain-to-Source V oltage, V

5
3

I

=20A

DP

2

10

I

=5A

7

D

5
3

-- A

2

D

1.0
7
5

3
2

Operation in this
area is limited by RDS(on).

0.1

Drain Current, I

7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board(900mm

0.01

0.01

23 57

0.1

Drain-to-Source V oltage, V

IT03484

f=1MHz

IT03486

100µs

23 57

IT03488

100

1.2

-- W
D

1.0

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Mounted on a ceramic board(900mm

2

✕0.8mm)

Ambient Temperature, Ta -- °C

IT03489

No.6998-3/4

CPH3408

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.

No.6998-4/4

PS