Datasheet CPH3407 Datasheet (SANYO)

Ordering number : ENN6997

CPH3407

N-Channel Silicon MOSFET

CPH3407

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Package Dimensions

unit : mm

2152A

[CPH3407]

2.9

0.4

3

1.6 0.60.6

1

2

1.9

2.8

0.15

1 : Gate

0.2

0.05

2 : Source
3 : Drain

0.9

0.7 0.2

SANYO : CPH3

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 20 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.2 W

20 V

±10 V

5A

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=3A, VGS=4V 28 37 mΩ
RDS(on)2 ID=1A, VGS=2.5V 35 50 mΩ

=1mA, VGS=0 20 V
VDS=20V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=3A 7 10 S

min typ max

Marking : KG Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62001 TS IM TA-3078

No.6997-1/4

CPH3407

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V, f=1MHz 630 pF
Output Capacitance Coss VDS=10V, f=1MHz 160 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 95 pF
Turn-ON Delay Time td(on) See specified Test Circuit 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 47 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=4V, ID=5A 7.3 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=5A 1.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=5A 2.1 nC
Diode Forward Voltage V

SD

See specified Test Circuit 110 ns

r

See specified Test Circuit 65 ns

f

IS=5A, VGS=0 0.8 1.2 V

Switching Time Test Circuit

VDD=10V

V

IN

4V
0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=3A
RL=3.3Ω

V

OUT

Ratings

min typ max

Unit

P.G

5.0

4.5

10.0V

4.0

3.5

-- A

3.0

D

2.5

2.0

1.5

Drain Current, I

1.0

0.5
0

0

0.1 0.2 0.3 0.4

80

70

60

(on) -- mΩ

50

DS

Static Drain-to-Source

On-State Resistance, R

ID=1A

40

30

20

10

0

0

I

50Ω

D

-- V

DS

CPH3407

S

2.5V

4.0V

1.5V

VGS=1.0V

0.5

0.6 0.7 0.8 0.9

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

GS

IT03451

Ta=25°C

3A

2468

Gate-to-Source V oltage, VGS -- V

IT03453

1.0

I

-- V

10

VDS=10V

9

8

7

-- A

6

D

5

4

3

Drain Current, I

2

1
0

0

0.2 0.4 0.6 0.8

D

Gate-to-Source V oltage, VGS -- V

70

60

50

(on) -- mΩ

DS

40

30

20

10

Static Drain-to-Source

On-State Resistance, R

10

0

--60

--40 --20 0 20 40 60 80 100 120 140 160

RDS(on) -- Ta

=1A, V

I

D

I

D

Ambient Temperature, Ta -- °C

1.0

=3A, V

GS

°C

Ta=75

°C

--25

1.2 1.4 1.6 1.8

=2.5V

GS

=4.0V

GS

25°C

Ta= --25

°C

25°C

75°C

2.0

IT03452

IT03454

No.6997-2/4

5
3

2

10

7
5

3
2

1.0
7
5

3
2

Forward Transfer Admittance, yfs -- S

0.1

0.01

1000

7
5

3
2

100

7
5

3
2

10

Switching Time, SW Time -- ns

7
5

3

0.1

4.0

3.5

-- V

3.0

GS

2.5

2.0

1.5

1.0

Gate-to-Source V oltage, V

0.5

0

0

1.4

yfs -- I

D

VDS=10V

°C

Ta= --25

25°C

75°C

23 57

2 3 57 2 3 57

0.1 1.0

Drain Current, ID -- A

SW Time -- I

D

VDD=10V
VGS=4V

td(off)

t

f

t

r

td(on)

23 57

Drain Current, I

1.0

23 57

-- A

D

VGS -- Qg

VDS=10V
ID=5A

12345678

Total Gate Charge, Qg -- nC

P

-- Ta

D

CPH3407

10

IT03455

10

IT03457

IT03459

I

-- V

F

25°C

SD

°C

--25

0.7

10

7
5
3
2

1.0

-- A
F

7
5

3
2

0.1
7

Forward Current, I

5
3
2

0.01

0.2

°C

Ta=75

0.3 0.4 0.5 0.6

Diode Forward V oltage, VSD -- V

Ciss, Coss, Crss -- V

2 4 6 8 10 12 14 16 18

Ciss, Coss, Crss -- pF

1000

100

7

5

3

2

7
5

3

0

Drain-to-Source V oltage, V

5
3

IDP=20A

2

10

7

ID=5A

5
3

-- A

2

D

1.0
7
5

3

Operation in this

2

area is limited by RDS(on).

0.1

Drain Current, I

7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board(900mm2✕0.8mm)

0.01
23 57

0.01

0.1

A S O

23 57

DC Operation

1.0

Drain-to-Source V oltage, V

VGS=0

0.8

0.9 1.0 1.1

IT03456

DS

f=1MHz

Ciss

Coss

Crss

IT03458

-- V

DS

10ms

-- V

100µs

1ms

IT03460

<10µs

100ms

23 571023 5

DS

1.2

20

1.2

-- W
D

1.0

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0

0

20 40 60 80

Mounted on a ceramic board(900mm

2

✕0.8mm)

100

120 140 160

Ambient Temperature, Ta -- °C

IT03461

No.6997-3/4

CPH3407

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.

No.6997-4/4

PS