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C505-CB290-E1000
Datasheet (CREE)
5 pgs117.76 Kb0

Datasheet C490-UB290-E1000, C490-CB290-E1000, C527-XB290-E1000-B, C527-XB290-E1000-A, C527-MB290-E1000 Datasheet (CREE)

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Page 1
LED Product Line
LOW CURRENT GaN LEDs
Brightness (mW)
Min Typ
Color
Peak Wavelength (nm)
Forward Voltage
Typ Max
ESD Rating Dimensions
C430-CB230-E1000
.425 .650
Blue
426 428 430 4.0 4.5
Class II
See Fig. 1
All measurements taken at 10mA.
LOW CURRENT InGaN LEDs
Brightness (mW)
Min Typ
Color
Dominant Wavelength (nm)
Min Typ Max
Forward Voltage
Typ Max
ESD Rating Dimensions
C460-CB230-E1000 1.0 1.3 Deep Blue 455 460 465 3.5 3.7
Class II
See Fig. 1
C470-CB230-E1000 1.0 1.3
Blue
465 470 475 3.5 3.7
Class II
See Fig. 1
C525-CB230-E1000 .500 .650
Green
520 525 535 3.5 3.7
Class II
See Fig. 1
All measurements taken at 10mA.
STANDARD BRIGHTNESS LEDs
Brightness (mW)
Min Typ
Color
Peak Wavelength (nm)
Forward Voltage
Typ Max
ESD Rating Dimensions
C430-CB290-E1000
.850 1.1
Blue
426 428 430 4.0 4.5
Class II
See Fig. 2
All measurements taken at 20mA.
SUPERBRIGHT™ InGaN LEDs
Brightness (mW)
Min Typ
Color
Dominant Wavelength (nm)
Min Typ Max
Forward Voltage
Typ Max
ESD Rating Dimensions
C450-CB290-E1000 2.5 3.5 Deep Blue 445 450 455 3.3 3.7
Class II
See Fig. 2
C460-CB290-E1000 2.0 3.0 Deep Blue 455 460 465 3.3 3.7
Class II
See Fig. 2
C470-CB290-E1000 2.0 2.5
Blue
465 470 475 3.3 3.7
Class II
See Fig. 2
C490-CB290-E1000 2.0 2.5 Aqua Blue 485 490 495 3.3 3.7
Class II
See Fig. 2
C505-CB290-E1000 1.5 2.0 Traffic Green 500 505 510 3.3 3.7
Class II
See Fig. 2
C525-CB290-E1000 1.0 1.5
Green
520 525 535 3.3 3.7
Class II
See Fig. 2
All measurements taken at 20mA.
ULTRABRIGHT™ GaN LEDs
CPR3AX Rev. D Tel: 919-313-5300 • Fax: 919-313-5451 © Cree, Inc. 2001-02 All Rights Reserved. www.cree.com
Page 2
Brightness (mW)
Min Typ
Color
Peak Wavelength (nm)
Forward Voltage
Typ Max
ESD Rating Dimensions
C430-UB290-E1000 1.4 2.0
Blue
426 428 430 4.2 4.7
Class II
See Fig. 3
All measurements taken at 20mA.
ULTRABRIGHT™ InGaN LEDs
Brightness (mW)
Min Typ
Color
Dominant Wavelength (nm)
Min Typ Max
Forward Voltage
Typ Max
ESD Rating Dimensions
C460-UB290-E1000 3.8 5.5 Deep Blue 455 460 465 3.5 3.9
Class II
See Fig. 3
C460-UB291-E1000 3.8 5.5 Deep Blue 455 460 465 3.5 3.9
Class II
See Fig. 2
C470-UB290-E1000 3.4 5.0
Blue
465 470 475 3.5 3.9
Class II
See Fig. 3
C470-UB291-E1000 3.4 5.0
Blue
465 470 475 3.5 3.9
Class II
See Fig. 2
C490-UB290-E1000 3.3 4.8 Aqua Blue 485 490 495 3.5 3.9
Class II
See Fig. 3
C505-UB290-E1000 2.5 3.5 Traffic Green 500 505 510 3.5 3.9
Class II
See Fig. 3
C525-UB290-E1000 1.7 3.0
Green
520 525 535 3.5 3.9
Class II
See Fig. 3
All measurements taken at 20mA.
MEGABRIGHT™ InGaN LEDs
Brightness (mW)
Min Typ
Color
Dominant Wavelength (nm)
Forward Voltage
Typ Max
ESD Rating Dimensions
C460-MB290-E1000 8.0 11.0 Deep Blue 455 460 465 3.7 4.0 Class II
See Fig. 3
C470-MB290-E1000 7.5 10.0
Blue
465 470 475 3.7 4.0 Class II
See Fig. 3
C503-MB290-E1000 6.0 8.0 Traffic Green 498 503 508 3.8 4.0 Class II
See Fig. 3
C505-MB290-E1000 6.0 8.0 Traffic Green 500 505 510 3.8 4.0 Class II
See Fig. 3
C527-MB290-E1000 5.0 7.0
Green
520 525 535 3.8 4.0 Class II
See Fig. 3
All measurements taken at 20mA.
CPR3AX Rev. D Tel: 919-313-5300 • Fax: 919-313-5451 © Cree, Inc. 2001-02 All Rights Reserved. www.cree.com
Page 3
MEGABRIGHT™ UltraViolet InGaN LEDs
Brightness (mW)
Min Typ
Color
Peak Wavelength (nm)
Min Typ Max
Forward Voltage
Typ Max
ESD Rating Dimensions
C395-MB290-E400 9.0 11.0
UV
390 395 400 3.7 4.0 Class I
See Fig. 3
C400-MB290-E400 10.0 12.0
UV
390 400 410 3.7 4.0 Class I
See Fig. 3
C405-MB290-E400 10.0 12.0
UV
400 405 410 3.7 4.0 Class I
See Fig. 3
All measurements taken at 20mA.
XBRIGHT™ InGaN LEDs
Brightness (mW)
Min Typ
Color
Dominant Wavelength (nm)
Min Typ Max
Forward Voltage
Typ Max
ESD
Rating
Dimensions
C460-XB290-E1000-A C460-XB290-E1000-B
11.0 15.0 Deep Blue 455 460 465 3.7 4.0 Class II
See Fig. 4
C470-XB290-E1000-A C470-XB290-E1000-B
11.0 14.0
Blue
465 470 475 3.7 4.0 Class II
See Fig. 4
C505-XB290-E1000-A C505-XB290-E1000-B
8.5 11.0 Traffic Green
500 505 510 3.8 4.0 Class II
See Fig. 4
C527-XB290-E1000-A C527-XB290-E1000-B
7.0 9.0
Green
520 527 535 3.8 4.0 Class II
See Fig. 4
All measurements taken at 20mA. “-A” XB LEDs feature Au/Sn backside metalization. “-B” XB LEDs feature Au backside metalization.
XBRIGHT™ UltraViolet InGaN LEDs
Brightness (mW)
Min Typ
Color
Peak Wavelength (nm)
Forward Voltage
Typ Max
ESD Rating Dimensions
C395-XB290-E400-A C395-XB290-E400-B
13.0 16.0
UV
390 395 400 3.7 4.0 Class I
See Fig. 4
C405-XB290-E400-A C405-XB290-E400-B
14.0 17.0
UV
400 405 410 3.7 4.0 Class I
See Fig. 4
All measurements taken at 20mA. “-A” XB LEDs feature Au/Sn backside metalization. “-B” XB LEDs feature Au backside metalization.
CPR3AX Rev. D Tel: 919-313-5300 • Fax: 919-313-5451 © Cree, Inc. 2001-02 All Rights Reserved. www.cree.com
Page 4
XBRIGHT™ 900 Power Chip™ LEDs
Brightness (mW)
Min Typ
Color
Dominant Wavelength (nm)
Min Typ Max
Forward Voltage
Typ Max
Dimensions
C470-XB900-A C470-XB900-B
TBD 150
Blue
465 470 475 3.7 4.0
See Fig. 5
All measurements taken at 350mA. “-A” XB LEDs feature Au/Sn backside metalization. “-B” XB LEDs feature Au backside metalization.
XBRIGHT™ 900 UltraViolet Power Chip™ LEDs
Brightness (mW)
Min Typ
Color
Peak Wavelength (nm)
Forward Voltage
Typ Max
Dimensions
C405-XB900-A C405-XB900-B
TBD 250
UV
400 405 410 3.7 4.0
See Fig. 5
All measurements taken at 350mA. “-A” XB LEDs feature Au/Sn backside metalization. “-B” XB LEDs feature Au backside metalization.
Fig. 1
G•SiC® LED Chip 200 x 200 µm
Mesa (junction) 175 x 175 µm
Gold Bond Pad
120 µm Diameter
Die Cross Section
GaN/InGaN
SiC Substrate
h
Bottom View
Anode (+)
h = 250
µm
Backside Metallization
Cathode (-)
Topside View – CB230
Fig. 2
Topside View – CB290 and UB291
G
•
SiC® LED Chip
300 x 300 µm
Mesa (junction) 240 x 240 µm
Gold Bond Pad 120 µm Diameter
Die Cross Section
GaN/InGaN
SiC Substrate
h
Bottom View
Anode (+)
h = 250
µm
Backside Metallization
Cathode (-)
CPR3AX Rev. D Tel: 919-313-5300 • Fax: 919-313-5451 © Cree, Inc. 2001-02 All Rights Reserved. www.cree.com
Page 5
CPR3AX Rev. D Tel: 919-313-5300 • Fax: 919-313-5451 © Cree, Inc. 2001-02 All Rights Reserved. www.cree.com
Fig. 3
G•SiC® LED Chip 300 x 300 µm
Mesa (junction) 240 x 240 µm
Gold Bond Pad 120 µm Diameter
Anode (+)
h = 250
µm
Backside Metallization
Cathode (-)
Bottom View
Die Cross Section
Topside View – UB290 and MB290
SiC Substrate
GaN/InGaN
Fig. 4
Topside View
G•SiC® LED Chip
300 x 300 µm
Top Area
Gold Bond Pad 96 µm Diameter
Cathode (-)
h = 250
µm
Backside Metallization 220 x 220 µm
Anode (+)
InGaN
SiC Substrate
Bottom View
Die Cross Section
Junction Area 248 x 248 µm
200 x 200 µm
Fig. 5
G-SiC LED Chip
900 x 900 µm
Bond Pad 120 µm Diameter
Cathode (-)
Anode (+)
InGaN
SiC Substrate
Bottom View
Die Cross Section
Width = 30
µ
m
Topside View – Power Chip™
Backside Metallization
Junction Area 845 x 845 µm
h = 250
µm
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