•74ABTH16825A incorporates bus-hold data inputs which
eliminate the need for external pull-up resistors to hold unused
inputs
•Output capability: +64mA/–32mA
•Latch-up protection exceeds 500mA per Jedec Std 17
•ESD protection exceeds 2000V per MIL STD 883 Method 3015
and 200V per Machine Model
•Bus-hold data inputs eliminate the need for external pull-up
resistors to hold unused inputs
QUICK REFERENCE DATA
SYMBOLPARAMETER
C
t
PLH
t
PHL
C
OUT
I
CCZ
I
CCL
IN
Propagation delay
nAx to nYx
Input capacitanceVI = 0V or V
Output capacitanceVO = 0V or VCC; 3-State6pF
pp
DESCRIPTION
The74ABT16825A high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The74ABT16825A 18-bit buffers provide high performance bus
interface buffering for wide data/address paths or buses carrying
parity. They have NOR Output Enables (nOE
control flexibility.
Two options are available, 74ABT16825A which does not have the
bus-hold feature and 74ABTH16825A which incorporates the
bus-hold feature.
Outputs disabled; VCC = 5.5V500µA
74ABT16825A
74ABTH16825A
1, nOE2) for maximum
CONDITIONS
T
= 25°C; GND = 0V
amb
CL = 50pF; VCC = 5V
CC
Outputs Low; VCC = 5.5V9mA
TYPICALUNIT
1.8
1.4
4pF
ns
ORDERING INFORMATION
PACKAGESTEMPERATURE RANGE OUTSIDE NORTH AMERICANORTH AMERICADWG NUMBER
56-pin SSOP Type III–40°C to +85°C74ABT16825A DLBT16825A DLSOT371-1
56-pin TSSOP Type II–40°C to +85°C74ABT16825A DGGBT16825A DGGSOT364-1
56-pin SSOP Type III–40°C to +85°C74ABTH16825A DLBH16825A DLSOT371-1
56-pin TSSOP Type II–40°C to +85°C74ABTH16825A DGGBH16825A DGGSOT364-1
H = High voltage level
L = Low voltage level
X = Don’t care
Z = High impedance “off” state
OPERATING
MODE
LOGIC SYMBOL
74ABT16825A
74ABTH16825A
55 54 52 51 4948 4745
1A0 1A1 1A2 1A3 1A4 1A5 1A6 1A7
1
1OE0
56
28
29
1OE1
1Y0 1Y1 1Y2 1Y3 1Y4 1Y5 1Y6 1Y7
2356891012
41 40 38 37 36 34 3331
2A0 2A1 2A2 2A3 2A4 2A5 2A6 2A7
2OE0
2OE1
2Y0 2Y1 2Y2 2Y3 2Y4 2Y5 2Y6 2Y7
16 17 19 2021 23 2426
44
1A8
1Y8
13
30
2A8
2Y8
27
SA00072
ABSOLUTE MAXIMUM RA TINGS
SYMBOL
V
CC
I
IK
V
I
I
OK
V
OUT
DC supply voltage–0.5 to +7.0V
DC input diode currentVI < 0–18mA
DC input voltage
DC output diode currentVO < 0–50mA
DC output voltage
PARAMETERCONDITIONSRATINGUNIT
3
3
1, 2
–1.2 to +7.0V
Output in Off or High state–0.5 to +5.5V
Output in Low state128
OUT
T
stg
p
Output in High state–64
Storage temperature range–65 to 150°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
High-level output voltageVCC = 5.0V; IOH = –3mA; VI = VIL or V
OH
VCC = 4.5V; IOH = –32mA; VI = VIL or V
V
Low-level output voltageVCC = 4.5V; IOL = 64mA; VI = VIL or V
OL
Input leakage current
I
I
ABT16825A
VCC = 5.5V; VI = GND or 5.5V±0.01±1.0±1.0µA
VCC = 5.5V; VI = VCC or GND
I
p
74ABTH16825A
VCC = 5.5V; VI = V
VCC = 5.5V; VI = 0
VCC = 4.5V; VI = 0.8V3535
I
HOLD
us Hold current A inputs
VCC = 4.5V; VI = 2.0V–75–75
VCC = 5.5V; VI = 0 to 5.5V±500
I
OFF
IPU/I
I
OZH
I
OZL
I
CEX
I
CCH
I
CCL
I
CCZ
∆I
∆I
Power-off leakage currentVCC = 0.0V; VO = 4.5V; VI = 0V or 5.5V±5.0±100±100µA
Power-up/down 3-State
PD
output current
3
VCC = 2.1V; VO = 0.5V; VI = GND or VCC;
VOE = Don’t care
3-State output High currentVCC = 5.5V; VO = 5.5V; VI = VIL or V
3-State output Low currentVCC = 5.5V; VO = 0.0V; VI = VIL or V
Output High leakage currentVCC = 5.5V; VO = 5.5V; VI = GND or V
I
O
Output current
1
VCC = 5.5V; VO = 2.5V–50–70–180–50–180mA
VCC = 5.5V; Outputs High, VI = GND or V
Quiescent supply currentVCC = 5.5V; Outputs Low, VI = GND or V
VCC = 5.5V; Outputs 3-State;
VI = GND or V
Additional supply current per
CC
input pin2 74ABT16825A
Additional supply current per
CC
input pin2 74ABTH16825A
VCC = 5.5V; one input at 3.4V,
other inputs at VCC or GND
VCC = 5.5V; one input at 3.4V,
other inputs at VCC or GND
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. This parameter is valid for any V
transition time of up to 100µsec is permitted.
4. Unused pins at V
5. This is the bus hold overdrive current required to force the input to the opposite logic state.
or GND.
CC
between 0V and 2.1V with a transition time of up to 10msec. From VCC = 2.1V to VCC = 5V ± 10% a
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
[1]
74ABT16825A
74ABTH16825A
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
print codeDate of release: 05-96
Document order number:9397-750-03503
yyyy mmm dd
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