Datasheet 2SK3081 Datasheet (HIT)

Features

• Low on-resistance

R

= 10mΩ typ.

DS(on)

• 4V gate drive devices.

• High speed switching

Outline

2SK3081

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-636A (Z)

3rd. Edition

Jun 1998

TO–220AB

G

D

3

1. Gate

2. Drain(Flange)

3. Source

1

2

S

2SK3081

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state

(BR)DSS

(BR)GSS

DSS

GSS

GS(off)

R

DS(on)

resistance
Static drain to source on state

R

DS(on)

resistance
Forward transfer admittance |yfs|2030—S ID = 20A, VDS = 10V
Input capacitance Ciss — 1570 — pF VDS = 10V
Output capacitance Coss — 1100 — pF VGS = 0
Reverse transfer capacitance Crss — 410 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward vo ltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time
Note: 3. Pulse test

30——V I
±20——V I
——10µAVDS = 30 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0

1.0 — 2.0 V ID = 1mA, VDS = 10V
—1014mΩ ID = 20A, VGS = 10V

—1525mΩ ID = 20A, VGS = 4V

— 32 — ns VGS = 10V, ID = 20A
— 300 — ns RL = 0.5Ω
— 180 — ns
— 200 — ns
— 1.0 — V IF = 45A, VGS = 0
— 75 — ns IF = 45A, VGS = 0

30 V
±20 V
45 A
180 A
45 A
75 W

= 10mA, VGS = 0

D

= ±100µA, VDS = 0

G

diF/ dt =50A/µs

Note3

Note3

Note3

2

Main Characteristics

2SK3081

100

Power vs. Temperature Derating

75

50

25

Channel Dissipation Pch (W)

0

100

80

D

60

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

10 V

8 V

6 V
5 V

Pulse Test

4.5 V
4 V

1000

300
100

D

Drain Current I (A)

0.3

0.1

D

Maximum Safe Operation Area

30
10

Operation in

3

this area is
limited by R

1

Ta = 25°C
1 shot pulse

0.1 0.3 1
Drain to Source Voltage V (V)

100

Typical Transfer Characteristics

Tc = –25°C

80

60

DC Operation

(Tc = 25°C)

DS(on)

3

10 µs

100 µs

1 ms

PW = 10 ms

10

25°C
75°C

DS

30

100

40

Drain Current I (A)

20

0

246810

Drain to Source Voltage V (V)

3.5 V

3 V

V = 2.5 V

GS

DS

40

Drain Current I (A)

20

0

246810

Gate to Source Voltage V (V)

V = 10 V

DS

Pulse Test

GS

3

2SK3081

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

1.0
Pulse Test

0.8

DS(on)

V (V)

0.6

I = 50 A

D

0.4

0.2

20 A
10 A

Drain to Source Saturation Voltage

0

48

Gate to Source Voltage V (V)

12

16 20 1 10 100250

GS

Static Drain to Source on State Resistance

vs. Temperature

50

Ω

Pulse Test

40

DS(on)

R (m )

30

I = 20 A

D

20

V = 4 V

GS

10

10 V

10, 20 A

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

10 A

50 A

Static Drain to Source on State Resistance

vs. Drain Current

100

Pulse Test

Ω

50

DS(on)

R (m )

20

10

Drain to Source On State Resistance

5

V = 4 V

GS

10 V

205

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

50

fs

20

10

Tc = –25 °C

25 °C

5

75 °C

2

1

Forward Transfer Admittance |y | (S)

0.5

0.1

0.3 1 3 10
Drain Current I (A)

V = 10 V

DS

Pulse Test

D

30

100

4

2SK3081

Body–Drain Diode Reverse

Recovery Time

1000

500

200

100

50

20

Reverse Recovery Time trr (ns)

10

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

0.1 0.3 1 3 10 30 100
Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

50

I = 45 A

D

40

DS

30

V

V

DS

GS

V = 5 V

DD

20

10

Drain to Source Voltage V (V)

0

V = 15 V

DD

10 V

5 V

20 40 60 80 100

Gate Charge Qg (nc)

10 V
15 V

Typical Capacitance vs.
Drain to Source Voltage

10000

5000

2000
1000

500

Capacitance C (pF)

200
100

5

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

20

16

1000

500

GS

t

200

12

100

8

4

50

Switching Time t (ns)

20

Gate to Source Voltage V (V)

0

10

0.1 0.3 3 10 100
Drain Current I (A)

Ciss

Coss

Crss

V = 0

GS

f = 1 MHz

DS

d(off)

t

f

t

r

t

d(on)

V = 10 V, V = 10 V

GS

DD

PW = 5 µs, duty < 1 %

301

D

5

2SK3081

Reverse Drain Current vs.

Source to Drain Voltage

100

3

s (t)

1

γ

0.3

D = 1

0.5

80

DR

60

10 V
5 V

V = 0, –5 V

GS

40

20

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Pulse Test

SD

Normalized Transient Thermal Impedance vs. Pulse Width

Tc = 25°C

0.2

θ γ θ

0.1

0.1

ch – c(t) = s (t) • ch – c

θ

ch – c = 1.67 °C/W, Tc = 25 °C

0.05

0.03

Normalized Transient Thermal Impedance

0.02

0.01

1shot pulse

P

DM

PW

T

D =

PW

T

0.01
10 µ

100 µ 1 m 10 m

100 m 1 10

Pulse Width PW (S)

6

Switching Time Test Circuit Waveform

2SK3081

Vin Monitor

Vin
10 V

50Ω

D.U.T.

R

L

V
= 30 V

Vout
Monitor

DD

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

7

2SK3081

Package Dimensions

Unit: mm

2.79 ±0.2

1.27

18.5 ±0.57.8 ±0.5

1.2±0.1

2.54 ±0.5

10.16±0.2

9.5

8.0

1.27±0.1

1.5 max

0.76 ±0.1

2.54 ±0.5

f 3.6

+ 0.2

– 0.1

6.4

+ 0.1
– 0.08

15.0 ±0.3

0.5±0.1

14.0 ±0.5

2.7 max

4.44±0.2

1.26±0.15

Hitachi Code

EIAJ

JEDEC

TO–220AB

SC–46

—

8

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