Datasheet 2SK3057 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3057

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor
designed for high current switching application.

FEATURES

• Low on-state resistance

DS(on)1

R

= 17 mΩ MAX. (VGS = 10 V, ID = 23 A)

DS(on)2

R

= 27 mΩ MAX. (VGS = 4 V, ID = 23 A)

iss

• Low C

iss

: C

= 2100 pF TYP.

• Built-in gate protection diode

• Isolated TO-220 package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage V
Gate to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T

Note1

c

= 25°C) P

a

= 25°C) P
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy

Note2

Note2

DSS

GSS(AC)

GSS(DC)

D(DC)

D(pulse)

I

T

T

ch

stg

AS

I

AS

E

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3057 Isolated TO-220

60 V

±20 V

+20, –10 V

±45 A

±150 A

30 W

2.0 W

150 °C

–55 to +150 °C

22.5 A

50.6 mJ

Notes 1.

PW ≤ 10 µs, Duty Cycle ≤ 1 %

2.

Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0

THERMAL RESISTANCE

Channel to Case R
Channel to Ambient R

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D13096EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan

th(ch-c)

th(ch-a)

4.17 °C/W

62.5 °C/W

©

1998

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MI N. TYP. MAX. UNIT

2SK3057

Drain to Source On-state Resi stance R

Gate to Source Cut-off Voltage V

DS(on)1VGS

DS(on)2VGS

R

GS(off)VDS

= 10 V, ID = 23 A1217m
= 4 V, ID = 23 A1727m

= 10 V, ID = 1 mA 1.0 1.6 2.0 V
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 23 A 13 42 S
Drain Leakage Current I
Gate to Source Leakage Current I
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V

Reverse Recovery Time t
Reverse Recovery Charge Q

DSS

VDS = 60 V, VGS = 0 V10

GSS

VGS = ±20 V, VDS = 0 V

iss

VDS = 10 V 2100 pF

oss

VGS = 0 V 550 pF

rss

f = 1 MHz 220 pF

d(on)ID

d(off)

GS

GD

F(S-D)IF

rr

= 23 A35ns

r

GS(on)

V

= 10 V 410 ns

VDD = 30 V 120 ns

f

G

RG = 10

Ω

200 ns
ID = 45 A45nC
VDD = 48 V7.0nC

GS(on)

V

= 10 V13nC

= 45 A, VGS = 0 V1.0V

IF = 45 A, VGS = 0 V60ns

rr

di/dt = 100 A /

s 100 nC

µ

10

±

Ω
Ω

A

µ

A

µ

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

VGS = 20 → 0 V

V

G

R

DD

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

V

DS

Starting T

L

DD

V

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

I

G

PG.

= 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

R

PG.

V

GS

0

τ

τ = 1 µs

Duty Cycle ≤ 1 %

G

R

G

= 10 Ω

V

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

10 %10

0

t

d(on)

V

90

%

I

trt

t

on

GS(on)

D

d(off)tf

t

%

90

90

%

%

off

L

R

V

DD

2

Data Sheet D13096EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = 25 °C)

2SK3057

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

T

C

- Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

1000

100

I

D(DC)

Limited

DS(on)

R

10

- Drain Current - A

D

I

TC = 25
Single Pulse

1

0.1

DC Dissipation Limited

˚C

1 10 100

V

DS

- Drain to Source Voltage - V

I

D(pulse)

100

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

70

60

50

40

30

20

- Total Power Dissipation - W

T

10

P

0

20 40 60 80 100 120 140 160

T

C

- Case Temperature - °C

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

VGS = 4

Pulsed

V

100

P

W

=

10

µs

100

µs

1

ms

10

ms

ms

80

60

40

- Drain Current - A

D

I

VGS =

10 V

20

0

1

V

DS

- Drain to Source Voltage - V

2

3

4

FORWARD TRANSFER CHARACTERISTICS

100

10

TA = 125˚C

75˚C
25˚C

1

- Drain Current - A

D

I

−25˚C

0.1
Pulsed

DS

V

012345

V

GS

- Gate to Source Voltage - V

= 10 V

Data Sheet D13096EJ1V0DS00

3

1000

2SK3057

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

10

1

0.1

0.01

- Transient Thermal Resistance - ˚C/W

th(t)

r

0.001

µµ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100

Tch = −25˚C

25˚C

10

75˚C

125˚C

1

| - Forward Transfer Admittance - S

fs

y

|

0.1

0.1

1.0

I

D

- Drain Current - A

100

1

m10

VDS = 10
Pulsed

10 100

m 100 m 1 10 100 1000 10
PW - Pulse Width - s

V

th(ch-a)

R

R

th(ch-c)

Single Pulse

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

70
60
50
40
30
20
10

- Drain to Source On-state Resistance - mΩ

010

DS(on)

R

V

GS

- Gate to Source Voltage - V

ID = 30

A

20 30

= 62.5 ˚C/W

= 4.17 ˚C/W

Pulsed

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

80

Pulsed

GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

2.0

VDS = 10 V
I

D

= 1 mA

60

1.5

40

VGS = 4

20

- Drain to Source On-state Resistance - mΩ

0

DS(on)

R

10.1

4

V

VGS = 10

10 100

I

D

- Drain Current - A

V

Data Sheet D13096EJ1V0DS00

1.0

0.5

- Gate to Source Cut-off Voltage - V

GS(off)

0

V

−50

0 50 100 150

T

ch

- Channel Temperature - ˚C

2SK3057

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

40

30

20

10

- Drain to Source On-state Resistance - mΩ

DS(on)

R

0

−50

0

T

ch

- Channel Temperature - ˚C

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

50

100 150

100

10

1

Ciss, Coss, Crss - Capacitance - pF

0.1

0.1

1 10 100

V

DS

- Drain to Source Voltage - V

VGS = 4 V

VGS = 10 V

I

D

= 20 A

VGS = 0
f = 1 MHz

C

C
C

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

VGS = 10 V

10

1

- Diode Forward Current - A

SD

0.1

I

VGS = 0 V

Pulsed

0

0.5

V

SD

- Source to Drain Voltage - V

1 1.5

SWITCHING CHARACTERISTICS

VDD = 30 V

GS

= 10 V

10000

1000

iss

oss

rss

- Switching Time - ns

f

100

, t

d(off)

, t

r

, t

10

d(on)

t

0.1

1 10 100

I

D

- Drain Current - A

V
R

G

= 10 Ω

t

r

t

f

t

d(off)

t

d(on)

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

1000

100

10

- Reverse Recovery Time - ns

rr

t

1

0.1

1 10 100

I

F

- Drain Current - A

di/dt = 100 A /
V

GS

=

0

Data Sheet D13096EJ1V0DS00

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

µ

s

80

60

VDD = 12 V

30 V
48 V

D

= 45 A

I
V

GS

40

= 10 V

16
14

12
10

8
6

20

- Drain to Source Voltage - V

DS

V

0

20 40 60 80

Q

G

- Gate Charge - nC

4

- Gate to Source Voltage - V

GS

2

V

0

5

2SK3057

SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD

100

IAS = 22.5 A

10

1.0

G

= 25 Ω

R
V

DD

0.1

10

= 30 V

V

GS

= 20 V → 0

Starting T

µ

ch

= 25 °C
100

µ

L - Inductive Load - H

- Single Avalanche Energy - mJ

AS

I

E

PACKAGE DRAWING (Unit : mm)

Isolated TO-220 (MP-45F)

10.0 ± 0.3

φ

3.2

±

4.5 ± 0.2

0.2

AS

=

50.6
mJ

1

m10

2.7

m

±

0.2

SINGLE AVALANCHE ENERGY

160
140
120
100

80
60
40

Energy Derating Factor - %

20

DERATING FACTOR

0

25 50

Starting T

75 100

ch

- Starting Channel Temperature - ˚C

VDD = 30V

G

= 25Ω

R

GS

= 20 V → 0 V

V

AS

≤ 22.5A

I

125 150

0.7 ± 0.1

Remark

EQUIVALENT CIRCUIT

0.3

±

15.0

2.54

123

The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

1.3

2.54

0.1

0.2

±

±

3

12.0

0.2

±

MIN.

4

13.5

±

0.2

1.Gate

2.Drain

3.Source

0.65

Drain (D)

Body

Gate (G)

Diode

Gate
Protection

±

0.1

2.5

±

0.11.5 ± 0.2

Diode

Source (S)

6

Data Sheet D13096EJ1V0DS00

[MEMO]

2SK3057

Data Sheet D13096EJ1V0DS00

7

2SK3057

• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.

• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.

• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.

• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.

M7 98. 8