DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
2SK3054
DESCRIPTION
The 2SK3054 is a switching device which can be driven
directly by a 2.5-V power source.
The 2SK3054 has excellent switching characteristics,
and is suitable for use as a high-speed switching device
in digital circuits.
FEATURES
•Can be driven by a 2.5-V power source
•Low gate cut-off voltage
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS= 0 V) V
DS
Gate to Source Voltage (V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation P
Channel Temperature T
Storage Temperature T
Note
PW ≤ 10 ms, Duty cycle ≤ 50 %
= 0 V) V
Note
DSS
GSS
D(DC)
D(pulse)
I
ch
stg
T
–55 to +150 °C
50 V
±7V
±0.1 A
±0.2 A
150 mW
150 °C
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3054 SC-70
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14209EJ2V0DS00 (2nd edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark
★★★★
shows major revised points.
©
1999
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK3054
Drain Cut-off Current I
Gate Leakage Current I
Gate to Source Cut-off Voltage V
DSS
VDS = 50 V, VGS = 0 V 1
GSS
VGS = ±7 V, VDS = 0 V
GS(off)VDS
5
±
= 3 V, ID = 1 µA 0.9 1.2 1.5 V
Forward Transfer Admittance | yfs |VDS = 3 V, ID = 10 mA 20 38 mS
Drain to Source On-state Resi stance R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
DS(on)1VGS
DS(on)2VGS
R
iss
oss
rss
d(on)
r
d(off)
f
= 2.5 V, ID = 10 mA 22 40
= 4.0 V, ID = 10 mA 14 20
VDS = 3 V 8 pF
VGS = 0 V 7 pF
f = 1 MHz 3 pF
VDD = 3 V 15 ns
ID = 20 mA 100 ns
GS(on)
V
= 3 V 30 ns
RG = 10 Ω, RL = 150
Ω
35 ns
TEST CIRCUIT SWITCHING TIME
D.U.T.
V
GS
GS
10 %
0
D
I
10 %
0
t
d(on)
90 %
t
on
V
t
r
GS(on)
I
D
t
d(off)
t
off
90 %
90 %
10 %
t
f
PG.
GS
V
RG = 10 Ω
0
τ
τ = 1 s
µ
Duty Cycle ≤ 1 %
L
R
V
R
G
Wave Form
V
DD
I
D
Wave Form
A
µ
A
µ
Ω
Ω
2
Data Sheet D14209EJ2V0DS00
TYPICAL CHARACTERISTICS (TA = 25 °C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - mA
0
1.0
1.5
2.0
40
0.5
Pulsed
V
GS
= 4.5 V
80
100
60
20
V
GS
= 4.0 V
V
GS
= 2.5 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - mA
| y
fs
| - Forward Transfer Admittance - mS
V
DS
= 5 V
f = 1 kHz
10
10
100
200
100 200
1
2SK3054
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
300
250
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
60
150
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160
T
A
- Ambient Temperature - ˚C
100
- Total Power Dissipation - mW
50
T
P
0
30 60 90 120 150 180
T
A
- Ambient Temperature - ˚C
FORWARD TRANSFER CHARACTERISTICS
Pulsed
100
10
T
A
★
1
= 150 ˚C
75 ˚C
25 ˚C
- Drain Current - mA
D
I
0.1
−25 ˚C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
1.5
1.0
- Gate to Source Cut-off Voltage - V
GS(off)
V
0.5
0 50 100 150
T
ch
- Channel Temperature - ˚C
VDS = 3 V
D
= 1 µA
I
★
Data Sheet D14209EJ2V0DS00
0.01
V
DS
= 3 V
0
2
1
V
GS
34567
-
Gate to Source Voltage - V
3
2SK3054
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - Ω
01 3 5 7 9
6
10
10
Pulsed
30
20
8
42
ID = 100 mA
ID = 10 mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
I
D
- Drain Current - mA
Pulsed
10.1
10
100
10 100
1
R
DS(on)
- Drain to Source On-state Resistance - Ω
V
GS
= 4.0 V
V
GS
= 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-state Resistance - Ω
50
0
10
100 150
I
D
= 5 mA
15
20
25
V
GS
= 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-state Resistance - Ω
50
0
100 150
I
D
= 5 mA
15
20
30
25
V
GS
= 4.0 V
★
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
10
- Capacitance - pF
rss
, C
oss
, C
iss
C
1
1
V
DS
- Drain to Source Voltage - V
4
GS
= 0 V
V
f = 1 MHz
C
iss
C
oss
C
rss
10 100
Data Sheet D14209EJ2V0DS00
SWITCHING CHARACTERISTICS
1 000
100
t
d(off)
- Switching Time - ns
f
, t
10
d(off)
, t
r
, t
d(on)
t
1
1
t
r
t
f
t
d(on)
10 100
I
D
- Drain Current - mA
V
V
R
DD
= 3 V
GS
= 3 V
GS
= 10 Ω
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
VGS = 0 V
100
10
1
- Diode Forward Current - mA
0.1
SD
I
0.5
0.6 0.7 0.8 0.9 1.0
SD
- Source to Drain Voltage - V
V
2SK3054
Data Sheet D14209EJ2V0DS00
5
PACKAGE DRAWING (Unit: mm)
SC-70
2.1±0.1
1.25±0.1
2SK3054
2.0±0.2
0.9±0.1
Remark
+0.1
0.3
2
−0
0.65
0.65
1
3
+0.1
−0
0.3
Electrode
Connection
1. Source
2. Gate
3. Drain
EQUIVALENT CIRCUIT
Drain
Body
Diode
0.3
Marking
0 to 0.1
+0.1
−0.05
0.15
Gate
Gate
Protection
Diode
Source
Marking : G25
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
6
Data Sheet D14209EJ2V0DS00
[MEMO]
2SK3054
Data Sheet D14209EJ2V0DS00
7
2SK3054
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
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rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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