Page 1
N-Channel MOSFET
2SK3019
P b
Lead(Pb)-Free
FEATURES:
* Low on-resistance
* Fast switching speed
* Low voltage drive makes this device ideal for portable equipment
* Easily designed drive circuits
* Easy to parallel
3
1
2
1. GATE
2. SOURCE
3. DRAIN
SOT-523(SC-75)
Maximum Ratings (T
Characteristic Symbol
Drain-Source Voltage V
Gate-Source Voltage
Continuous Drain Current
Thermal Resistance, Junction-to-Ambient
Total Power Dissipation 150 mW
Junction temperature Range T
Storage Temperature Range Tstg -55 to +150 °C
=25°C unless otherwise specified)
A
R
V
DSS
GSS
I
D
θJA
P
D
Values Unit
30 V
±20
100
833
j
150
Device Marking
2SK3019 = KN
V
mA
°C/W
°C
WEITRON
http://www.weitron.com.tw
1/4 03-Jun-2011
Page 2
2SK3019
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage
VGS=0V,ID=10µA
Gate-Threshold Voltage
=3V, ID=100µA
V
DS
Gate-Source Leakage Current
V
=±20V, VDS=0V
GS
Zero Gate Voltage Drain Current
=0V, VDS=30V
V
GS
Drain-Source On-Resistance
=4V, ID=10mA
V
GS
VGS=2.5V, ID=1mA
Forward Tranconductance
=3V, ID=10mA
V
DS
Input Capacitance
V
=5V, VGS=0V, f=1MHz
DS
Output Capacitance
V
=5V, VGS=0V, f=1MHz
DS
Reverse Transfer Capacitance
=5V, VGS=0V, f=1MHz
V
DS
SWITCHING
Turn-on Time
VDD=5V, RL=500Ω, ID=10mA, VGS=5V, Rg=10Ω
V
V
th(GS)
I
GSS
I
DSS
R
DS(on)
gfs
C
C
C
T
D(on)
DS
iss
oss
rss
30
0.8
-
-
20
-
-
-
-
-
-
-
--
- -
13
9
4
15- -
-
1.5
±1 μA
1 µA
8
13
-
-
-
V
V
Ω
ms
pF
Rise Time
VDD=5V, RL=500Ω, ID=10mA, VGS=5V, Rg=10Ω
VDD=5V, RL=500Ω, ID=10mA, VGS=5V, Rg=10Ω
Fall Time
VDD=5V, RL=500Ω, ID=10mA, VGS=5V, Rg=10Ω
t
r
T
t
r
35- -
ns
80- -
80- -
WEITRON
http://www.weitron.com.tw
2/4 03-Jun-2011
Page 3
2SK3019
Typical Characteristics
200
Ta=25℃
Pulsed
160
(mA)
D
120
Output Characteristics
4.0V
3.5V
3.0V
200
100
30
(mA)
D
2.5V
80
10
Transfer Characteristics
VDS=3V
T
=25℃
a
Pulsed
DRAIN CURRENT I
40
0
0 1 2 3 4 5
DRAIN TO SOURCE VOLTAGE VDS (V)
R
——
50
Ta=25℃
Pulsed
30
)
Ω
DS(ON)
I
D
(
DS(ON)
10
VGS=2.5V
VGS=4V
3
ON-RESISTANCE R
1
1 10 100
DRAIN CURRENT ID (mA)
2.0V
VGS=1.5V
DRAIN CURRENT I
3
1
012 3 4
GATE TO SOURCE VOLTAGE VGS (V)
R
——
15
DS(ON)
V
GS
Ta=25℃
Pulsed
12
)
(Ω
DS(ON)
9
6
ID=100mA
ON-RESISTANCE R
3
ID=50mA
200303
0
0 4 8 12 16 20
GATE TO SOURCE VOLTAGE VGS (V)
200
Ta=25℃
100
Pulsed
30
(mA)
S
10
3
1
SOURCE CURRENT I
0.3
0.1
0.2 0.4 0.6 0.8 1.0
WEITRON
http://www.weitron.com.tw
IS ——
V
SD
SOURCE TO DRAIN VOLTAGE VSD (V)
3/4 03-Jun-2011
Page 4
2SK3019
SOT-523 Outline Dimensions
Unit:mm
A
B
D
E
G
M
L
H
J
TOP VIEW
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.30
0.70
1.45
-
0.15
0.80
1.40
0.00
0.70
0.37
0.10
Max
0.50
0.90
1.75
0.50
0.40
1.00
1.80
0.10
1.00
0.48
0.25
K
C
SOT-523
WEITRON
http://www.weitron.com.tw
4/4 03-Jun-2011
Page 5
Loading...