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SHINDENGEN
VX-2 Series Power MOSFET
2SK3013
(FP16W60VX2)
600V 16A
FEATURES
●Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
●The static Rds(on) is small.
●The switching time is fast.
●Avalanche resistance guaranteed.
APPLICATION
N-Channel Enhancement type
OUTLINE DIMENSIONS
Case : E-pack
Case : ITO-3P
(Unit : mm)
●Switching power supply of
AC 100-200V input
●Inverter
●Power Factor Control Circuit
RATINGS
●Absolute Maximum Ratings （Tc = 25℃）
Item Symbol Conditions Ratings Unit
Storage Temperature
Channel Temperature
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current（DC）
Continuous Drain Current（Peak)
Continuous Source Current（DC）
Total Power Dissipation
Single Pulse Avalanche Current
Dielectric Strength
Mounting Torque
T
T
V
DSS
V
GSS
I
I
DP
I
P
I
AS
Vdis
TOR
stg
ch
D
S
T
Tch = 25℃
Terminals to case, AC 1 minute
(Recommended torque : 0.5N･m）
-55～150 ℃
150
600 V
±30
16
48 A
16
70 W
16A
2kV
0.8 N･m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
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VX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃
Item Symbol Conditions Min. Typ. Max. Unit
V
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
Static Drain-Source On-ｓtate Resistance
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
Total Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time
(BR)DSSID
I
DSS
I
GSS
g
fs
R
DS(ON)ID
V
THID
V
SDIS
θjc
Qg
C
iss
C
rss
C
oss
t
on
t
off
2SK3013 ( FP16W60VX2 )
= 1mA, VGS = 0V
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 8A, VDS = 10V
= 8A, VGS = 10V
= 1mA, VDS = 10V
= 8A, VGS = 0V
junction to case
VGS = 10V, ID = 16A, VDD = 400V
VDS = 10V, VGS = 0V, f = 1MH
ID = 8A, VGS = 10V, RL = 19Ω
Z
600 V
250 μA
±0.1
6.2 10.0 S
0.45 0.6 Ω
2.5 3 3.5 V
1.5
1.78 ℃/Ｗ
85 nC
2300
180 pF
480
130 280 ns
260 500
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
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32
2SK3013 Transfer Characteristics
28
24
[A]
20
D
16
12
Tc = −55°C
25°C
100°C
150°C
Drain Current I
8
4
0
0 5 10 15 20
VDS = 25V
pulse test
TYP
Gate-Source Voltage VGS [V]
Page 4
2SK3013
10
[Ω]
DS(ON)
1
Static Drain-Source On-state Resistance
ID = 8A
0.1
Static Drain-Source On-state Resistance R
0.01
-50 0 50 100 150
Case Temperature Tc [°C]
VGS = 10V
pulse test
TYP
Page 5
[V]
TH
2SK3013
6
5
4
3
2
Gate Threshold Voltage
Gate Threshold Voltage V
1
0
-50 0 50 100 150
Case Temperature Tc [°C]
VDS = 10V
ID = 1mA
TYP
Page 6
100
48
16
2SK3013
Safe Operating Area
10
[A]
D
1
R
DS(ON)
limit
Drain Current I
0.1
Tc = 25°C
Single Pulse
100µs
200µs
1ms
10ms
DC
0.01
1 10 100 1000
Drain-Source Voltage VDS [V]
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2
10
1
10
0
10
-1
10
Transient Thermal Impedance
2SK3013
10
1
0.1
Time t [s]
-2
10
-3
10
-4
10
0.01
Transient Thermal Impedance θjc(t) [°C/W]
Page 8
2SK3013
100
80
60
40
20
Single Avalanche Energy Derating
Single Avalanche Energy Derating [%]
0
0 50 100 150
Starting Channel Temperature Tch [°C]
Page 9
10000
0.005
f=1MHz
Tc=25°C
TYP
Ciss
Coss
Crss
Drain-Source Voltage VDS [V]
1000
2SK3013
Capacitance
100
Capacitance Ciss Coss Crss [pF]
10
0 20 40 60 80 100
Page 10
= 15V → 0V
= 90V
DD
GS
V
V
Rg = 15Ω
= 500mJ
AS
E
= 16A
AS
Single Avalanche Current - Inductive Load
I
= 50mJ
AR
E
Inductance L [mH]
2SK3013
100
AS
[A]
10
1
0.1 1 10 100
0.1
Single Avalanche Current I
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2SK3013 Power Derating
100
80
60
40
Power Derating [%]
20
0
0 50 100 150
Case Temperature Tc [°C]
Page 12
2SK3013
Gate Charge Characteristics
500
V
DS
400
[V]
DS
300
200
Drain-Source Voltage V
100
VDD = 400V
200V
100V
V
GS
20
15
[V]
GS
10
5
Gate-Source Voltage V
ID = 16A
TYP
0
0 50 100 150 200
Gate Charge Qg [nC]
0
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