Datasheet 2SK3000 Datasheet (HIT)

2SK3000

Silicon N Channel MOS FET

Low Frequency Power Switching

Features

• Low on-resistance

R

= 0. 25Ω typ. (VGS = 10 V, ID = 450 mA)

DS(on)

• 4V gate drive devices.

• Small package (MPAK)

• Expansive drain to source surge power capability

Outline

ADE-208-585 (Z)

1st. Edition

December 1997

MPAK

2

G

3

1

D

3

1

S

2

1. Source

2. Gate

3. Drain

2SK3000

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. When using the glass epoxy board (10 mm x 10 mm x 1 mm

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Drain to source voltage V
Gate to source breakdown

DS(SUS)

V

(BR)GSS

voltage
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state

R

DSS

GSS

GS(off)

DS(on)

resistance
Static drain to source on state

R

DS(on)

resistance
Forward transfer admittance |yfs| 0.5 1.2 — S ID = 450 mA

Input capacitance Ciss — 14.0 — pF VDS = 10V
Output capacitance Coss — 68 — pF VGS = 0
Reverse transfer capacitance Crss — 3.0 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Note: 3. Pulse test

4. Marking is “ZY”.

40 — 60 V ID = 100µA, VGS = 0

40 — — V L = 100µH, ID = 3 A
±10——V I

— — 1.0 µAV
——±5 µAV

1.1 — 2.1 V ID = 10µA, VDS = 5V
— 0.3 0.5 Ω ID = 450 mA

— 0.25 0.3 Ω ID = 450 mA

— 0.12 — µsV
— 0.6 — µsR
— 1.7 — µs
— 1.4 — µs

40 V
±10 V

1.0 A

4.0 A

1.0 A
400 mW

t

)

= ±100µA, VDS = 0

G

= 40 V, VGS = 0

DS

= ±6.5V, VDS = 0

GS

= 4V

V

GS

V

= 10V

GS

V

= 10V

DS

= 4V, ID = 450 mA

GS

= 22Ω

L

Note3

Note3

Note3

2

Main Characteristics

2SK3000

Power vs. Temperature Derating

0.8

0.6

0.4

0.2

Channel Dissipation Pch (W)

0

50 100 150 200

Ambient Temperature Ta (°C)

5.0

4.0

D

Typical Output Characteristics

10 V

6 V

5 V

4 V

4.5 V

3.0

3.5 V

2.0

Pulse Test

Maximum Safe Operation Area

5

0.1 ms

2
1

D

0.5

0.2

0.1

0.05

Operation in

Drain Current I (A)

this area is

0.02

limited by R

0.01

Ta = 25 °C

0.05

0.2 0.5 2 5 20

PW = 100 ms (1 shot)

DC Operation

DS(on)

11050

1 ms

10 ms

Note 5

Drain to Source Voltage V (V)

Note5:Whenusingtheglassepoxyboard
(10mmx10mmx1mm)

Typical Transfer Characteristics

10

1

D

100m

125°C

25°C

Tc = –25°C

10m

50 µs

100 200

DS

t

Drain Current I (A)

1.0
V = 2.5 V

0

246810

Drain to Source Voltage V (V)

GS

3 V

DS

Drain Current I (A)

1m

100µ

0

12345

Gate to Source Voltage V (V)

V = 5 V

DS

Pulse Test

GS

3

2SK3000

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

1.0

0.8

DS(on)

V (V)

0.6

0.4

0.2

Drain to Source Saturation Voltage

0

48

12

Static Drain to Source on State Resistance

vs. Temperature

0.5

Ω

0.4

DS(on)

R ( )

0.3
V = 4 V

GS

I = 0.45 A

D

0.2

Static Drain to Source on State Resistance

Pulse Test

10

Pulse Test

3

1

DS(on)

R ( )Ω

0.3

I = 2 A

D

1 A

0.45 A

16 20 0.01 10.1

0.1

0.03

Drain to Source On State Resistance

0.01

0.03 0.3 3

Forward Transfer Admittance vs.

10

fs

5

2

1

0.45 A

0.5

vs. Drain Current

V = 4 V

GS

Drain Current

Tc = –25 °C

25 °C

75 °C

10 V

10

0.1

10 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

4

Pulse Test

0.2

Forward Transfer Admittance |y | (S)

0.1

V = 10 V

DS

Pulse Test

0.1 0.2 0.5 1 2 10
Drain Current I (A)

D

5

Typical Capacitance vs.
Drain to Source Voltage

500

200
100

V = 0
f = 1 MHz

Coss

GS

50

20

Ciss

10

Capacitance C (pF)

5

Crss

2
1

048121620

Drain to Source Voltage V (V)

DS

5000

Switching Characteristics

t

2000

1000

d(off)

t

f

500

200

Switching Time t (ns)

100

50

t

d(on)

V = 4 V, V = 10 V

GS

PW = 5 µs, duty < 1 %

0.05
Drain Current I (A)

2SK3000

t

r

DD

0.50.20.1

1

D

52

Drain to Source DiodeReverse Surge

Destruction Characteristics

500

200

100

50

20

Applied Power Ps (W)

10

5

0.05 1

0.50.20.1

Surge Pulse Width PW (mS)

Ta = 25°C
1 shot

10525020

Reverse Drain Current vs.

Source to Drain Voltage

5

10 V

5 V

V = 0

4

DR

3

2

1

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

GS

Pulse Test

SD

5

2SK3000

1000

300

100

θ j–a (°C/W)

Transient Thermal Resistance

30

10

Thermal Resistance

3

1

1 m

Switching Time Test Circuit Switching Time Waveforms
Vin Monitor

Vin
4 V

50Ω

Condition :
Ta = 25°C
When using the glass epoxy board
(10mm x 10mm x 1mm )

10 m 100 m 1 10 100 1000

Pulse Width PW (S)

Vout
Monitor

D.U.T.

R

L

V

DD

= 10 V 

Vin
Vout

10%

10%

90%

t

90%

10%

90%

td(on)

tr

td(off)

t

f

6

Package Dimensions

0.4

0.95

0.95

1.9

+ 0.3

2.8

– 0.1

+ 0.10
– 0.05

+ 0.1

0.65

+ 0.1

0.65

0.3

– 0.3

1.5

– 0.3

+ 0.2

+ 0.2

– 0.6

2.8

– 0.1

1.1

+ 0.10

0.16

– 0.06

0 ~ 0.15

Hitachi Code

EIAJ

JEDEC

2SK3000

Unit: mm

MPAK

SC–59A

TO–236Mod.

7

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