Datasheet 2SK2980 Datasheet (HIT)

Features

• Low on-resistance

R

= 0. 2Ω typ. (VGS = 4 V, ID = 500 mA)

DS(on)

• 2.5V gate drive devices.

• Small package (MPAK)

Outline

2SK2980

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-571B (Z)

3rd. Edition

Jun 1998

MPAK

G

3

1

D

S

2

1. Source

2. Gate

3. Drain

2SK2980

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V

Drain current I
Drain peak current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm)

30 V
+12 V
–10 V

1.0 A
4A

0.8 W

2

2SK2980

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

30——V I

voltage
Gate to source breakdown V

(BR)GSS

+12 — — V IG = +100µA, VDS = 0
voltage –10 — — V IG = –100µA, VDS = 0
Zero gate voltege drain

I

DSS

— — 1.0 µAV
current

Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

GS(off)

DS(on)

——±5.0 µAV

0.5 — 1.5 V ID = 10µA, VDS = 5V

— 0.2 0.28 Ω ID = 500 mA
resistance

Static drain to source on state

R

DS(on)

— 0.3 0.5 Ω ID = 500 mA
resistance

Forward transfer admittance |yfs| 1.2 2.0 — S ID = 500 mA

Input capacitance Ciss — 155 — pF VDS = 10V
Output capacitance Coss — 75 — pF VGS = 0
Reverse transfer capacitance Crss — 35 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

— 12 — ns VGS = 4V, ID = 500 mA

— 30 — ns RL = 20Ω

—35—ns

—30—ns
Note: 3. Pulse test

4. Marking is “ZZ– ”

= 100µA, VGS = 0

D

= 30 V, VGS = 0

DS

= ±8V, VDS = 0

GS

Note3

= 4V

V

GS

Note3

= 2.5V

V

GS

Note3

= 10V

V

DS

3

2SK2980

Main Characteristics

Power vs. Temperature Derating

1.6
Test condition :

When using alumina ceramic board
(12.5 x 20 x 0.7 mm)

1.2

0.8

0.4

Channel Dissipation Pch (W)

0

1.0

0.8

D

0.6

0.4

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

4 V

2.5 V

Pulse Test

2 V

1.8 V

100

D

0.3

Drain Current I (A)

0.1

0.03

0.01

1.0

0.8

D

0.6

0.4

Maximum Safe Operation Area

30
10

3
1

Operation in
this area is
limited by R

Ta = 25 °C

0.3 3 30

0.1 1
Drain to Source Voltage V (V)

Typical Transfer Characteristics

DS(on)

75°C

10 µs

100 µs

PW = 10 ms

(1 shot)

DC Operation

10

25°C

Tc = –25°C

1 ms

100

DS

Drain Current I (A)

0.2

0

4

V = 1.5 V

GS

246810

Drain to Source Voltage V (V)

DS

Drain Current I (A)

0.2

0

12345

Gate to Source Voltage V (V)

V = 10 V

DS

Pulse Test

GS

2SK2980

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

0.5
Pulse Test

0.4

DS(on)

V (V)

0.3

0.2

0.1

Drain to Source Saturation Voltage

0

24

I = 1 A

D

6

0.5 A

0.2 A

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

0.5

W

I = 0.1 A, 0.2 A, 0.5 A

D

0.4

DS(on)

V = 2.5 V

0.3

0.2

GS

0.1 A, 0.2 A, 0.5 A

R ( )

4 V

0.1

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Pulse Test

Case Temperature Tc (°C)

810

GS

Static Drain to Source on State Resistance

vs. Drain Current

2

Pulse Test

1

DS(on)

0.5

R ( )W

0.2

V = 2.5 V

GS

4 V

0.1

Drain to Source On State Resistance

0.05

0.1 0.2 0.5 1 2 5
Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

5

fs

2

Tc = –25 °C

1

0.5
75 °C

0.2

0.1

Forward Transfer Admittance |y | (S)

0.05

V = 10 V

DS

Pulse Test

0.01 0.02 0.05 0.1 0.2 0.5
Drain Current I (A)

D

25 °C

1

5

2SK2980

1000

500

200
100

50

Capacitance C (pF)

20
10

5

Typical Capacitance vs.
Drain to Source Voltage

V = 0

GS

f = 1 MHz

Coss

Ciss

Crss

01020304050

Drain to Source Voltage V (V)

DS

Dynamic Input Characteristics

50

40

DS

30

V

DS

20

10

Drain to Source Voltage V (V)

0

246810

V = 5 V

DD

V

GS

V = 20 V

DD

10 V

5 V

I = 1 A

10 V
20 V

Gate Charge Qg (nc)

D

16

GS

12

8

4

Gate to Source Voltage V (V)

0

20

200

Switching Characteristics

100

t

50

20

t

t

d(off)

f

t

r

d(on)

10

5

Switching Time t (ns)

V = 4 V, V = 10 V

2
1

GS

PW = 2 µs, duty < 1 %

DD

0.1 0.2 0.5 1 2 5 10
Drain Current I (A)

D

Reverse Drain Current vs.

Source to Drain Voltage

1.0

0.8

DR

0.6
5 V

V = 0

GS

0.4

0.2

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Pulse Test

SD

6

Switching Time Test Circuit Waveform

R

L

V

DD

= 10 V

Vout
Monitor

Vin

Vout

10%

10%

Vin Monitor

Vin
4 V

D.U.T.

50W

2SK2980

90%

10%

td(on)

90%

tr

90%

td(off)

t

f

7

2SK2980

Package Dimensions

0.4

0.95

0.95

1.9

+ 0.3

2.8

– 0.1

+ 0.10
– 0.05

+ 0.1

+ 0.1

0.65

0.3

– 0.3

0.65

1.5

– 0.3

+ 0.2

+ 0.2

– 0.6

2.8

– 0.1

1.1

0.16

0 ~ 0.15

+ 0.10
– 0.06

Hitachi Code

EIAJ

JEDEC

Unit: mm

MPAK

SC–59A

TO–236Mod.

8

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