Datasheet 2SK2978 Datasheet (HIT)

Features

• Low on-resistance

R

= 0.09Ω typ. (VGS = 4 V, ID = 1.5 A)

DS(on)

• Low drive current

• High speed switching

• 2.5V gate drive devices.

Outline

2SK2978

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-659B (Z)

3rd. Edition

Jun 1998

G

UPAK

1

2

3

D

4

1. Gate

2. Drain

3. Source

4. Drain

S

2SK2978

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state

(BR)DSS

(BR)GSS

DSS

GSS

GS(off)

R

DS(on)

resistance
Static drain to source on state

R

DS(on)

resistance
Forward transfer admittance |yfs| 3.0 5.0 — S ID = 1.5A, VDS = 10V
Input capacitance Ciss — 260 — pF VDS = 10V
Output capacitance Coss — 150 — pF VGS = 0
Reverse transfer capacitance Crss — 75 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time
Note: 3. Pulse test

4. Marking is “ZY”

20——V I
±10——V I
——10µAVDS = 20 V, VGS = 0
——±10 µAVGS = ±8V, VDS = 0

0.5 — 1.5 V ID = 1mA, VDS = 10V
— 0.09 0.12 Ω ID = 1.5A, VGS = 4V

— 0.12 0.20 Ω ID = 1.5A, VGS = 2.5V

— 15 — ns VGS = 4V, ID = 1.5A
— 70 — ns RL = 6.67Ω
—55—ns
—70—ns
— 0.9 — V IF = 2.5A, VGS = 0
— 75 — ns IF = 2.5A, VGS = 0

20 V
±10 V

2.5 A
5A

2.5 A
1W

= 10mA, VGS = 0

D

= ±100µA, VDS = 0

G

diF/ dt =50A/µs

Note3

Note3

Note3

2

Main Characteristics

2SK2978

Power vs. Temperature Derating

2.0
Test condition :
When using the alumina ceramic
board (12.5 x 20 x 0.7 mm)

1.5

1.0

0.5

Channel Dissipation Pch (W)

0

10 V
5

4

D

3

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

5 V

3 V

2.5 V

Pulse Test

2 V

Maximum Safe Operation Area

10

3

D

1

0.3
Operation in

this area is

0.1
limited by R

Drain Current I (A)

0.03
Ta = 25 °C

0.01

0.1 0.3 1 3 10 30 100
Drain to Source Voltage V (V)

Typical Transfer Characteristics

5

4

D

3

PW = 10 ms (1 shot)

DC Operation

DS(on)

10 µs

100 µs

1 ms

V = 10 V
Pulse Test

DS

DS

2

Drain Current I (A)

1

0

246810

Drain to Source Voltage V (V)

V = 1.5 V

GS

DS

2

75°C

Drain Current I (A)

1

0

12345

Gate to Source Voltage V (V)

25°C

Tc = –25°C

GS

3

2SK2978

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

1

Pulse Test

0.8

DS(on)

V (V)

0.6

I = 5 A

0.4

0.2
1 A

D

2.5 A

Drain to Source Saturation Voltage

0

24

Gate to Source Voltage V (V)

6

810

GS

Static Drain to Source on State Resistance

vs. Temperature

0.25
Pulse Test

0.2

DS(on)

R ( )Ω

I = 5 A

D

0.15

2.5 V

0.1
V = 4 V

GS

1, 2.5 A

5 A

0.05

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

1.5 A

2.5 A

1 A

Static Drain to Source on State Resistance

vs. Drain Current

1

Ω

0.5

DS(on)

0.2

R ( )

0.1

V = 2.5 V

GS

PulseTest

4 V

0.05

0.02

Drain to Source On State Resistance

0.01

0.1 1

0.2

0.5

Drain Current I (A)

2

D

Forward Transfer Admittance vs.

Drain Current

10

5

fs

2

1

Tc = –25 °C

25 °C

75 °C

0.5

0.2

Forward Transfer Admittance |y | (S)

0.1

0.1 0.2 0.5 1
Drain Current I (A)

V = 10 V

DS

Pulse Test

25

D

105

10

4

2SK2978

Body–Drain Diode Reverse

Recovery Time

100

50

20

di / dt = 50 A / µs

Reverse Recovery Time trr (ns)

10

0.1 0.2 0.5

V = 0, Ta = 25 °C

GS

1

Reverse Drain Current I (A)

Dynamic Input Characteristics

50

I = 2.5 A

D

40

DS

2

510

DR

1000

300

100

Capacitance C (pF)

20

16

1000

500

GS

Typical Capacitance vs.
Drain to Source Voltage

Ciss

Coss

Crss

30

10

3

V = 0

GS

f = 1 MHz

1

0 5 10 15 20 25

Drain to Source Voltage V (V)

DS

Switching Characteristics

V = 4 V, V = 10 V

GS

DD

PW = 5 µs, duty < 1 %

V

30

GS

V = 10 V

DD

20

10

Drain to Source Voltage V (V)

0

V = 10 V

DD

5 V

4 8 12 16 20

Gate Charge Qg (nc)

12

5 V

8

4

V

DS

0

200

100

t

f

50

Switching Time t (ns)

Gate to Source Voltage V (V)

20

t

d(on)

10

0.1 0.2

0.5

1

Drain Current I (A)

t

d(off)

t

r

2

D

10

5

5

2SK2978

Reverse Drain Current vs.

Source to Drain Voltage

5

4 V

4

DR

2.5 V

3

V = 0

2

GS

1

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Pulse Test

SD

Switching Time Test Circuit Waveform

Vin Monitor

Vout
Monitor

D.U.T.

R

Vin
4 V

50Ω

L

V

DD

= 10 V

Vin
Vout

10%

10%

90%

10%

td(on)

90%

tr

90%

td(off)

t

f

6

Package Dimensions

4.5 ± 0.1

1.8 max

4

0.53 max

0.48 max

1

1.5

φ

1.0

23

1.5

3.0

1.5 ± 0.1

0.4

2.5 ± 0.1

4.25 max

0.8 min

2SK2978

Unit: mm

0.44 max

0.44 max

Hitachi Code

EIAJ

JEDEC

UPAK

SC–62

–

7

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