Datasheet 2SK2977LS Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

DC/DC Converter Applications

Ordering number:ENN6423

2SK2977LS

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.5

Features

· Low ON resistance.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

Package Dimensions

unit:mm

2078B

[2SK2977LS]

10.0

3.2

16.1

3.6

123

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %1021A

PD

Tc=25˚C

3.5

7.2

0.9

1.2

0.75

2.4

2.552.55

16.0

14.0

2.8

0.6

1.2

0.7

1 : Gate
2 : Drain
3 : Source
SANYO : TO220FI-LS

03V
02±V
03A

0.2W
03W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SG

SD
SD

SSD)RB(
SSD
SSG

)ffo(VSDI,V01=

1)no(VSGI,V01=

2)no(VSGI,V4=

I

V,Am1=

D

V

SD

V

SG

0=03V

SG

V,V03=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1=0.14.2V

D

A81=5172S

D

A81=5122mΩ

D

A81=5253mΩ

D

31000TS (KOTO) TA-2275 No.6423–1/4

sgnitaR

nimpytxam

Continued on next page.

tinU

2SK2977LS

Continued from preceding page.

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ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

S

zHM1=f,V01=0061Fp
zHM1=f,V01=008Fp
zHM1=f,V01=003Fp

tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS054sn
tiucriCtseTdeificepseeS051sn
tiucriCtseTdeificepseeS081sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

V,A03=

SG

D

0=0.12.1V

sgnitaR

nimpytxam

A81=04Cn
A81=5Cn
A81=21Cn

tinU

Switching Time Test Circuit

VDD=15V

V

IN

10V

0V

V

IN

PW=10µs
D.C.≤1%

P.G

30

25

–A

20

D

15

10

G

50Ω

10.0V

Drain Current, I

5

0

00.20.1 0.40.3 0.60.5 0.80.7 1.00.9

50

45

Drain-to-Source Voltage, VDS–V

D

I

-- V

D

RDS(on) -- V

8.0V

6.0V

ID=18A
RL=0.83Ω

S

DS

GS

4.0V

V

OUT

VGS=2.5V

3.0V

IT01054

Tc=25°C
ID=18A

30

25

20

–A

D

15

10

Drain Current, I

5

D

VDS=10V

GS

°C

--25

Tc=75°C

I

-- V

25°C

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

40

35

Gate-to-Source Voltage, VGS–V

RDS(on) -- Tc

IT01055

–mΩ

40

(on)

35

DS

30

25

20

15

Static Drain-to-Source

On-State Resistance, R

10

Gate-to-Source Voltage, V

–mΩ

30

(on)

25

DS

20

15

10

5

Static Drain-to-Source

On-State Resistance, R

5472638910

GS

–V

IT01056

0

--60 40--40 --20 12020 60 80 100 1601400

=4V

GS

=18A, V

I

D

=10V

GS

=18A, V

I

D

Case Temperature, Tc – ˚C

IT01057

No.6423–2/4

100

7
5

3

fs|–S

2

y

10

7
5

3
2

1.0
7
5

3
2

Forward Transfer Admittance, |

0.1

2

0.01 1001.0 100.1

1000

VDD=15V

7

VGS=10V

5

3
2

100

7
5

3

Switching Time, SW Time – ns

2

y

fs -- I



D

VDS=10V

°C

25

°C

Tc=--25

°C

75

357 2357 2357 2357

Drain Current, ID–A

SW Time -- I

D

IT01058

td(off)

t

f

t

r

td(on)

2SK2977LS

100

10

–A

F

1.0

Forward Current, I

0.1

0.01

10000

1000

Ciss, Coss, Crss – pF

I

-- V

F

SD

7
5

3
2

7
5

3
2

7
5

3
2

7
5

3
2

0.20 0.4 0.6 0.8 1.21.0

°C

Tc=75

25

°C

°C

--25

Diode Forward Voltage, VSD–V

Ciss, Coss, Crss -- V

7
5

3
2

7
5

3
2

Ciss

Coss

Crss

VGS=0

IT01059

DS

f=1MHz

10

23 57

0.1 1.0

10

VDS=10V

9

ID=18A

V

8

–

GS

7

6

5
4

3

2

Gate-to-Source Voltage, V

1
0

0 5 10 15 20 25 30 35 40

23 57 23 57

Drain Current, ID–A

10 100

VGS -- Qg

Total Gate Charge, Qg – nC

P

-- Ta

2.5

–W

2.0

D

1.5

1.0

D

IT01060

IT01062

100

0 5 10 15 20 25 30

1000

7
5

3
2

100

7
5

–A

3

D

2

,I

10

7
5

3

Operation in this

2

area is limited by RDS(on).

Drain Current

1.0
7
5

3

Tc=25°C

2

Single pulse

0.1

0.1

40

35

–W

D

30

25

20

15

Drain-to-Source Voltage, VDS–V

A S O

IDP=120A

ID=30A

DC operation

23 57

Drain-to-Source Voltage, V

23 57 23 57

1.0

P

-- Tc

D

1ms

10ms

100ms

10 100

–V

DS

IT01061

100µs

IT01063

0.5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C Case Temperature, Tc – ˚C

IT01065

10

5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

IT01064

No.6423–3/4

2SK2977LS

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6423–4/4