Datasheet 2SK2959 Datasheet (HIT)

Features

e

• Low on-resistance

R

= 7mΩ typ.

DS(on)

• 4V gate drive devices.

• High speed switching

Outline

2SK2959

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-569C (Z)

4th. Edition

Aug 1998

TO–220AB

G

D

1

2

S

1. Gate

2. Drain(Flang

3. Source

3

2SK2959

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state

(BR)DSS

(BR)GSS

DSS

GSS

GS(off)

R

DS(on)

resistance
Static drain to source on state

R

DS(on)

resistance
Forward transfer admittance |yfs|2545—S ID = 25A, VDS = 10V
Input capacitance Ciss — 2000 — pF VDS = 10V
Output capacitance Coss — 1500 — pF VGS = 0
Reverse transfer capacitance Crss — 350 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time
Note: 3. Pulse test

30——V I
±20——V I
——10µAVDS = 30 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0

1.0 — 2.0 V ID = 1mA, VDS = 10V
— 7.0 10 mΩ ID = 25A, VGS = 10V

—1218mΩID = 25A, VGS = 4V

— 20 — ns VGS = 10V, ID = 25A
— 330 — ns RL = 0.4Ω
— 190 — ns
— 190 — ns
— 0.95 — V IF = 50A, VGS = 0
— 60 — ns IF = 50A, VGS = 0

30 V
±20 V
50 A
200 A
50 A
75 W

= 10mA, VGS = 0

D

= ±100µA, VDS = 0

G

diF/ dt =50A/µs

Note3

Note3

Note3

2

Main Characteristics

2SK2959

100

Power vs. Temperature Derating

75

50

25

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

10 V

50

5 V

4 V

40

D

3.5 V

30

Pulse Test

3 V

1000

Maximum Safe Operation Area

300
100

D

30
10

Operation in

3

this area is

Drain Current I (A)

limited by R

1

0.3
Ta = 25°C

0.1

0.1 0.3 1
Drain to Source Voltage V (V)

Typical Transfer Characteristics

50

V = 10 V

DS

Pulse Test

40

D

30

10 µs

PW = 10 ms (1 shot)

DC Operation

(Tc = 25°C)

DS(on)

100 µs

1 ms

3

10

DS

30

100

20

Drain Current I (A)

10

0

246810

Drain to Source Voltage V (V)

2.5 V

V = 2 V

GS

DS

20

75°C

Drain Current I (A)

10

0

12345

Gate to Source Voltage V (V)

25°C

Tc = –25°C

GS

3

2SK2959

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

0.5
Pulse Test

0.4

DS(on)

V (V)

0.3

0.2

I = 20 A

D

0.1

10 A

Drain to Source Saturation Voltage

0

48

Gate to Source Voltage V (V)

12

16 20 1

GS

Static Drain to Source on State Resistance

vs. Temperature

20

W

Pulse Test

I = 5, 10, 20 A

D

16

DS(on)

R (m )

V = 4 V

GS

12

8

10 V

4

5 ,10, 20 A

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

5 A

Static Drain to Source on State Resistance

vs. Drain Current

500

Pulse Test

W

500

DS(on)

100

R (m )

50

20

V = 4 V

GS

10

Drain to Source On State Resistance

5

Drain Current I (A)

10

10 V

205

D

Forward Transfer Admittance vs.

Drain Current

50

fs

20

10

Tc = –25 °C

25 °C

5

75 °C

2

1

Forward Transfer Admittance |y | (S)

0.5

0.1

0.2 1 2 10

0.5 5
Drain Current I (A)

V = 10 V

DS

Pulse Test

D

100250

200

20

50

4

2SK2959

Body–Drain Diode Reverse

Recovery Time

100

50

20

10

5

2

Reverse Recovery Time trr (ns)

1

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

0.1 0.3 1 3 10 30 100

Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

50

I = 50 A

D

40

DS

V

GS

30

V

DS

V = 5 V

DD

20

10 V
25 V

20

16

12

8

10000

3000

1000

300

100

Capacitance C (pF)

300

10

01020304050

Drain to Source Voltage V (V)

1000

500

GS

200

100

50

Typical Capacitance vs.
Drain to Source Voltage

Ciss

Coss

Crss

V = 0

GS

f = 1 MHz

Switching Characteristics

V = 10 V, V = 10 V

GS

DD

PW = 5 µs, duty < 1 %

t

d(off)

t

f

t

r

DS

10

Drain to Source Voltage V (V)

0

V = 25 V

DD

10 V

5 V

20 40 60 80 100

Gate Charge Qg (nc)

4

Switching Time t (ns)

20

Gate to Source Voltage V (V)

0

10

0.1 0.2 2 10 50

0.5 5
Drain Current I (A)

t

d(on)

201

D

5

2SK2959

Reverse Drain Current vs.

Source to Drain Voltage

50

3

s (t)

1

g

0.3

D = 1

0.5

40

DR

30

10 V

5 V

V = 0, –5 V

GS

20

10

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Pulse Test

SD

Normalized Transient Thermal Impedance vs. Pulse Width

Tc = 25°C

0.2

q g q

0.1

0.1

ch – c(t) = s (t) • ch – c

q

ch – c = 1.67 °C/W, Tc = 25 °C

0.05

0.03

Normalized Transient Thermal Impedance

0.02

0.01

1shot pulse

P

DM

PW
T

D =

PW

T

0.01
10 µ

100 µ 1 m 10 m

100 m 1 10

Pulse Width PW (S)

6

Switching Time Test Circuit Waveform

2SK2959

Vin Monitor

Vin
10 V

50W

D.U.T.

R

L

V

DD

= 10 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

7

2SK2959

Package Dimensions

Unit: mm

2.79 ±0.2

1.27

18.5 ±0.57.8 ±0.5

1.2±0.1

2.54 ±0.5

10.16±0.2

9.5

8.0

1.27±0.1

1.5 max

0.76 ±0.1

2.54 ±0.5

f 3.6

+ 0.2

– 0.1

6.4

+ 0.1
– 0.08

15.0 ±0.3

0.5±0.1

14.0 ±0.5

2.7 max

4.44±0.2

1.26±0.15

Hitachi Code

EIAJ

JEDEC

TO–220AB

SC–46

—

8

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