Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK2857 is a switching device which can be driven directly
by a 5V power source.
The 2SK2857 features a low on-state resistance and excellent
Switching Characteristics, and is suitable for applications such as
actuator driver.
FEATURES
• Can be driven by a 5V power source.
• Low On-state resistance :
DS(on)1
R
R
= 220 mΩ MAX. (VGS = 4 V, ID = 1.5 A)
DS(on)2
= 150 mΩ MAX. (VGS = 10 V, ID = 2.5 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation
Note1
Note2
Channel Temperature T
Storage Temperature T
DSS
GSS
D(DC)
D(pulse)
I
T
P
ch
stg
−55 to +150 °C
60 V
±20 V
±4 A
±16 A
2W
150 °C
PACKAGE DRAWING (Unit : mm)
4.5±0.1
.
0.42
±0.06
0.8MIN
1.6±0.2
2
1
1.5
3.0
0.47
±0.06
3
0.42
2.5±0.1
±0.06
1.5±0.1
4.0±0.25
+0.03
0.41
-0.05
Marking : NX
EQUIVALENT CIRCUIT
Drain
Internal
Gate
Gate
Protection
Diode
Source
Diode
Electrode
Connection
1.Souce
2.Drain
3.Gate
Notes1.
2.
Remark
PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
Mounted on ceramic board of 16 cm
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11648EJ2V0DS00 (2nd edition)
Date Published March 1999 NS CP (K)
Printed in Japan
2
× 0.7 mm
The mark
••••
shows major revised points.
©
1998,1999
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
2SK2857
Drain Cut-off Current I
Gate Leakage Current I
Gate Cut-off Voltage V
DSS
VDS = 60 V, VGS = 0 V 10
GSS
VGS = ±20 V, VDS = 0 V ±10
GS(off)
VDS = 10 V, ID = 1 mA 1.0 1.4 2.0 V
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 2 A 1 S
DS(on)1 VGS
Drain to Source On-state Resistance
R
R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
DS(on)2 VGS
iss
oss
rss
d(on)
r
d(off)
f
G
GS
GD
F(S-D) IF
rr
rr
= 4 V, ID = 1.5 A 150 220 m
= 10 V, ID = 2.5 A 110 150 m
VDS = 10 V
VGS = 0 V
f = 1 MHz
VDD = 25 V, ID = 1 A
V
R
GS(on)
L
= 25
= 10 V, R
G
Ω
= 10
Ω
265 pF
125 pF
56 pF
8ns
11 ns
52 ns
22 ns
VDS = 48 V
VGS = 10 V
D
= 4 A
I
10.6 nC
0.7 nC
3.5 nC
= 4 A, VGS = 0 V 0.86 V
IF = 4 A, VGS = 0 V
di/dt = 50 A /
s
µ
49 ns
26.6 nC
A
µ
A
µ
Ω
Ω
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
L
R
V
PG.
V
GS
RG = 10 Ω
0
τ
τ = 1 s
µ
Duty Cycle ≤ 1 %
RG
VDD
Wave Form
ID
Wave Form
VGS
GS
10 %
0
0
10 %
td(on)
90 %
tr
ton
D
I
V
GS(on)
ID
td(off)
90 %
90 %
10 %
tf
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
50 Ω
RL
VDD
2
Data Sheet D11648EJ2V0DS00
Page 3
TYPICAL CHARACTERISTICS (TA = 25°C)
2SK2857
••••
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
30
TA - Ambient Temperature -
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
2.0
8 V
1.6
1.2
0.8
- Drain Current - A
D
I
0.4
6 V
4 V
60
VGS = 2 V
90
120
˚C
150
FORWARD BIAS SAFE OPERATING AREA
100
10
Limited (@V
DS(on)
R
1
- Drain Current - A
D
I
TA = 25˚C
Single Pulse
Mounted on Ceramic
Board of 16cm x 0.7mm
0.1
V
DS
TRANSFER CHARACTERISTICS
20
VDS = 10 V
10
1
- Drain Current - A
D
0.1
I
V)
0
1
=
GS
2
1
PW
=
10
ms
100 ms
DC
10 100
- Drain to Source Voltage - V
= 125˚C
A
T
75˚C
25˚C
−25˚C
1 ms
0
20
0.4
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
0.8
V
DS
- Drain to Source Voltage - V
1.2
VDS = 10 V
10
TA = −25
1
| - Forward Transfer Admittance - S
fs
| y
0.1
0.1
1
ID - Drain Current - A
25
75
125
1.6 2.0
˚C
˚C
˚C
˚C
0.01
1
23
54
VGS - Gate to Sorce Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
240
GS = 4 V
V
200
160
120
TA = 125
75
25
−25
˚C
˚C
˚C
˚C
80
40
0
10
20
0.1 10
RDS(on) - Drain to Source On-state Resistance - mΩ
1
I
D - Drain Current - A
20
Data Sheet D11648EJ2V0DS00
3
Page 4
2SK2857
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
240
GS = 10 V
V
200
160
120
80
40
0
0.1
RDS(on) - Drain to Source On-State Resistance - mΩ
1000
f = 1 MHz
100
Ciss, Coss, Crss - Capacitance - pF
TA = 125˚C
1
I
D - Drain Current - A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
75˚C
25˚C
−25˚C
10 20
C
iss
C
oss
C
rss
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1000
800
600
400
200
- Drain to Source On-state Resistance - mΩ
DS (on)
R
0
2
6
4
810
ID = 2.5 A
1.5 A
12
VGS - Gate to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
100
10
14 16
tr
td(off)
tf
td(on)
10
1
VDS - Drain Source Voltage - V
10 100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
20
VGS = 0 V
10
1
- Source to Drain Current - A
F
I
0.1
0.8
0.6
1.0 1.2 1.4 1.6 1.8 2.0
V
F(S-D)
- Source to Drain Voltage - V
td(on), tr, td(off), tf - Swwitchig Time - ns
0.1
0.1 1 10
D - Drain Current - A
I
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
ID = 4 A
50
40
V
DS
30
VDD = 12 V
30 V
48 V
V
GS
20
- Drain to Source Voltage - V
10
DS
V
084126210
12
10
8
6
4
- Gate to Source Voltage - V
2
GS
V
0
Qg - Gate Charge - nC
4
Data Sheet D11648EJ2V0DS00
Page 5
[MEMO]
2SK2857
Data Sheet D11648EJ2V0DS00
5
Page 6
[MEMO]
2SK2857
6
Data Sheet D11648EJ2V0DS00
Page 7
[MEMO]
2SK2857
Data Sheet D11648EJ2V0DS00
7
Page 8
2SK2857
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
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rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
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parties arising from the use of these circuits, software, and information.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
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Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
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