Datasheet 2SK2958-S, 2SK2958-L Datasheet (HIT)

2SK2958(L),2SK2958(S)

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-568B (Z)

3rd. Edition

Jun 1998

Features

• Low on-resistance

R

DS(on)

= 5.5mΩ typ.

• 4V gate drive devices.

• High speed switching

Outline

1. Gate

2. Drain

3. Source

4. Drain

1

2

3

4

1

2

3

4

LDPAK

G

D

S

2SK2958(L),2SK2958(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

30 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

75 A

Drain peak current I

D(pulse)

Note1

300 A

Body-drain diode reverse drain current I

DR

75 A

Channel dissipation Pch

Note2

100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

30——V I

D

= 10mA, VGS = 0

Gate to source breakdown voltage V

(BR)GSS

±20——V I

G

= ±100µA, VDS = 0

Zero gate voltege drain current I

DSS

——10µAVDS = 30 V, VGS = 0

Gate to source leak current I

GSS

——±10 µAVGS = ±16V, VDS = 0

Gate to source cutoff voltage V

GS(off)

1.0 — 2.0 V ID = 1mA, VDS = 10V

Static drain to source on state
resistance

R

DS(on)

— 5.5 7.0 mΩ ID = 40A, VGS = 10V

Note3

Static drain to source on state
resistance

R

DS(on)

— 9.0 14.0 mΩ ID = 40A, VGS = 4V

Note3

Forward transfer admittance |yfs|3560—S I

D

= 40A, VDS = 10V

Note3

Input capacitance Ciss — 4100 — pF VDS = 10V
Output capacitance Coss — 2700 — pF VGS = 0
Reverse transfer capacitance Crss — 800 — pF f = 1MHz
Turn-on delay time t

d(on)

— 45 — ns VGS = 10V, ID = 40A

Rise time t

r

— 430 — ns RL = 0.25Ω

Turn-off delay time t

d(off)

— 460 — ns

Fall time t

f

— 440 — ns

Body–drain diode forward voltage V

DF

— 1.0 — V IF = 75A, VGS = 0

Body–drain diode reverse
recovery time

t

rr

— 90 — ns IF = 75A, VGS = 0

diF/ dt =50A/µs

Note: 3. Pulse test

2SK2958(L),2SK2958(S)

3

Main Characteristics

160

120

80

0

50 100 150 200

0.1 0.3 1

3

10

30

100

100

80

60

40

20

0

246810

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

1000

300
100

30
10

1

0.3

0.1

3

Ta = 25°C

10 µs

100 µs

1 ms

DC Operation

(Tc = 25°C)

Operation in
this area is
limited by R

DS(on)

PW = 10 ms (1 shot)

5 V

4 V

3.5 V

3 V

40

V = 10 V

GS

6 V

2.5 V

100

80

60

40

20

0

12345

Tc = –25°C

25°C

75°C

V = 10 V
Pulse Test

DS

Pulse Test

2SK2958(L),2SK2958(S)

4

0

48

12

16 20

20

16

12

8

4

–40 0 40 80 120 160

0

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Drain Current I (A)

D

Drain to Source On State Resistance

R (m )

W

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I (A)

D

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance vs.

Drain Current

V = 4 V

GS

10 V

Pulse Test

R (m )

W

DS(on)

0.5

0.4

0.3

0.2

0.1

Pulse Test

I = 50 A

D

20 A
10 A

1 30 1003

50

2

5

1

10 1000300

20

10

V = 4 V

GS

10 V

Pulse Test

10, 20 A

I = 50 A

D

20 A

10 A

50 A

0.1 0.3 1 3 10 30 100

500

100

200

20

50

10

2

5

1

0.5

Tc = –25 °C

75 °C

25 °C

V = 10 V
Pulse Test

DS

2SK2958(L),2SK2958(S)

5

0.1 0.3 1 3 10 30 100

01020304050

3000

100000

10000

30000

50

40

30

20

10

0

20

16

12

8

4

80 160 240 320 400

0

1000

100

200

20

10

0.1 0.2

2

10

100

1000

500

100

200

20

50

10

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

1000

300

20

1

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs.
Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

100

V = 0
f = 1 MHz

GS

Ciss

Coss

Crss

I = 75 A

D

V

GS

V

DS

V = 5 V

10 V
25 V

DD

V = 25 V

10 V

5 V

DD

0.5

5

5

2000

5000

500

50

50

V = 10 V, V = 10 V
PW = 5 µs, duty < 1 %

GS

DD

r

t

d(on)

t

d(off)

t

t

f

2SK2958(L),2SK2958(S)

6

100

80

60

40

20

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

V = 0, –5 V

GS

5 V

10 V

Pulse Width PW (S)

Normalized Transient Thermal Impedance

s (t)

g

Normalized Transient Thermal Impedance vs. Pulse Width

3

1

0.3

0.1

0.03

0.01
10 µ

100 µ 1 m 10 m

100 m 1 10

DM

P

PW

T

D =

PW

T

ch – c(t) = s (t) • ch – c
ch – c = 1.25 °C/W, Tc = 25 °C

q g q
q

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

2SK2958(L),2SK2958(S)

7

Vin Monitor

D.U.T.

Vin
10 V

R

L

V
= 10 V

DD

tr

td(on)

Vin

90%

90%

10%

10%

Vout

td(off)

Vout
Monitor

50W

90%

10%

t

f

Switching Time Test Circuit Waveform

2SK2958(L),2SK2958(S)

8

Package Dimensions

Unit: mm

10.2 ± 0.3
(1.4)

8.6 ± 0.3

1.27 ± 0.2

1.2 ± 0.2

2.54 ± 0.5

11.3 ± 0.5

(1.5)

0.86

+0.2
–0.1

3.0

+0.3

–0.5

0.76 ± 0.1

10.0

+0.3

–0.5

2.54 ± 0.5

4.44 ± 0.2

1.3 ± 0.2

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

10.2 ± 0.3
(1.4)

8.6 ± 0.3

1.27 ± 0.2

2.54 ± 0.5

(1.5)

0.86

+0.2
–0.1

10.0

+0.3

–0.5

2.54 ± 0.5

4.44 ± 0.2

1.3 ± 0.2

2.59 ± 0.2

0.4 ± 0.1

1.2 ± 0.2

(1.5)

0.1

+0.2
–0.1

L type S type

Hitachi Code

EIAJ

JEDEC

LDPAK

—
—

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