Datasheet 2SK2955 Datasheet (HIT)

2SK2955

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

RDS =0.010 Ω typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

Outline

ADE-208-564B (Z)

3rd. Edition

Jun 1998

TO–3P

G

D

1. Gate

1

2

3

S

2. Drain
(Flange)

3. Source

2SK2955

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note3

AP

Note3

AR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs|2440—S ID = 20A, VDS = 10V
Input capacitance Ciss — 2200 — pF VDS = 10V
Output capacitance Coss — 1050 — pF VGS = 0
Reverse transfer capacitance Crss — 320 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

recovery time
Note: 4. Pulse test

60——V I
±20——V I
——±10 µAVGS = ±16V, VDS = 0
——10µAVDS = 60 V, VGS = 0

1.5 — 2.5 V ID = 1mA, VDS = 10V
— 0.010 0.013 Ω ID = 20A, VGS = 10V
— 0.015 0.025 Ω ID = 20A, VGS = 4V

— 25 — ns ID = 20A, VGS = 10V
— 200 — ns RL = 1.5Ω
— 320 — ns
— 240 — ns
— 0.95 — V IF = 45A, VGS = 0
— 60 — ns IF = 45A, VGS = 0

60 V
±20 V
45 A
180 A
45 A
45 A
173 mJ
100 W

= 10mA, VGS = 0

D

= ±100µA, VDS = 0

G

diF/ dt =50A/µs

Note4

Note4

Note4

2

Main Characteristics

2SK2955

200

150

100

Channel Dissipation Pch (W)

Power vs. Temperature Derating

50

50

40

0

10 V

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

6 V

5 V
4 V

Pulse Test

Maximum Safe Operation Area

1000

300
100

D

30
10

Operation in

3

this area is

Drain Current I (A)

0.3

0.1

50

40

limited by R

1

Ta = 25 °C

0.1 0.3 1
Drain to Source Voltage V (V)

Typical Transfer Characteristics

V = 10 V

DS

Pulse Test

10 µs

100 µs

PW = 10 ms (1shot)

DC Operation (Ta = 25°C)

DS(on)

3

10

1 ms

30

DS

100

D

30

20

Drain Current I (A)

10

0

246810

Drain to Source Voltage V (V)

3.5 V

3 V

V = 2.5 V

GS

DS

D

30

20

Drain Current I (A)

10

0

Gate to Source Voltage V (V)

Tc = 75°C

12345

25°C

–25°C

GS

3

2SK2955

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

0.5
Pulse Test

0.4

DS(on)

V (V)

0.3

I = 20 A

0.2

0.1

D

10 A

Drain to Source Saturation Voltage

0

48

12

16 20

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

40

W

Pulse Test

32

DS(on)

R (m )

24

V = 4 V

GS

I = 20 A

D

10 A 5 A

16

5, 10, 20 A

8

10 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

5 A

GS

Static Drain to Source on State Resistance

vs. Drain Current

100

Pulse Test

W

50

20

DS(on)

R (m )

10

V = 4 V

GS

10 V

5

2

Drain to Source On State Resistance

1

1 5 20 10021050

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

500

fs

Pulse Test

V = 10 V

DS

200
100

50

Tc = –25 °C

20
10

25 °C

5
2

75 °C

1

Forward Transfer Admittance |y | (S)

0.5

0.1 0.3 1 3 10 30 100
Drain Current I (A)

D

4

2SK2955

Body–Drain Diode Reverse

Recovery Time

100

50

20

di / dt = 50 A / µs

Reverse Recovery Time trr (ns)

10

V = 0, Ta = 25 °C

GS

0.1 0.3 1 3 10 30 100
Reverse Drain Current I (A)

Dynamic Input Characteristics

100

I = 45 A

D

80

DS

60

V

DS

V

GS

V = 10 V

DD

40

20

Drain to Source Voltage V (V)

0

V = 50 V

DD

25 V
10 V

40 80 120 160 200

Gate Charge Qg (nc)

DR

25 V
50 V

Typical Capacitance vs.

10000

5000

2000

1000

500

Capacitance C (pF)

200

100

50

Drain to Source Voltage

V = 0

GS

f = 1 MHz

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

20

16

GS

1000

500

200

12

100

8

4

50

Switching Time t (ns)

20

Gate to Source Voltage V (V)

0

10

0.1 0.2 1 2 10 20 100

0.5 5 50
Drain Current I (A)

Ciss

Coss

Crss

DS

t

d(off)

t

f

t

r

t

d(on)

V = 10 V, V = 30 V

GS

DD

PW = 10 µs, duty < 1 %

D

5

2SK2955

Reverse Drain Current vs.

Source to Drain Voltage

50

40

DR

30

10 V

5 V

V = 0, –5 V

GS

20

10

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Avalanche Test Circuit Avalanche Waveform

V

DS

Monitor

Rg

Vin
15 V

50W

Pulse Test

SD

L

I

AP

Monitor

D. U. T

Maximum Avalanche Energy vs.

Channel Temperature Derating

200

AR

160

120

80

40

0

Repetitive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

1

E = • L • I •

AR

2

I

AP

V

DD

I

D

V

DD

0

AP

2

I = 45 A

AP

V = 25 V

DD

duty < 0.1 %
Rg > 50

W

V

DSS

V – V

DSS DD

V

DS

V

(BR)DSS

6

2SK2955

3

Normalized Transient Thermal Impedance vs. Pulse Width

s (t)

1

g

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.02

0.01

1shot pulse

0.01
10 µ

100 µ 1 m 10 m 100 m 1 10

Pulse Width PW (S)

Tc = 25°C

q g q

ch – c(t) = s (t) • ch – c

q

ch – c = 1.25 °C/W, Tc = 25 °C

P

DM

PW

T

D =

PW

T

Switching Time Test Circuit Waveform

Vin Monitor

Vout
Monitor

D.U.T.

R

Vin
10 V

50W

L

V

DD

= 30 V

Vin
Vout

10%

10%

90%

td(on)

tr

90%

td(off)

90%

10%

t

f

7

2SK2955

Package Dimensions

16.0 max

0.5 typ

f

3.2 ± 0.2

1.0 typ

Unit: mm

5.0 max

1.5 typ

5.0 ± 0.3

1.6 typ

1.4 max

2.0 typ

1.0 ± 0.2

3.6 typ

5.45 ± 0.2 5.45 ± 0.2

0.9 typ

1.0 typ

2.0 typ

20.1 max18.0 ± 0.5

14.9 ± 0.2

0.3 typ

2.8 typ

0.6 ± 0.2

Hitachi Code

EIAJ

JEDEC

TO–3P
SC–65

—

8

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