Datasheet 2SK2951 Datasheet (SANYO)

Ordering number : ENN6916

2SK2951

N-Channel Silicon MOSFET

2SK2951

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

Package Dimensions

unit : mm

2062A

[2SK2951]

0.4

3

1.5

0.75

4.5

1.6

3.0

0.5

2

1

1.5

2.5

4.25max

1.0

0.4

1 : Gate
2 : Drain
3 : Source

Specifications

SANYO : PCP
(Bottom view)

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature Tch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 4 A
Mounted on a ceramic board (250mm
Tc=25°C 3.5 W

2

✕0.8mm) 1.5 W

200 V
±20 V

1A

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.0 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on) ID=0.5A, VGS=10V 2.5 3.5 Ω

(BR)DSSID

DSS
GSS

yfs





=1mA, VGS=0 200 V
VDS=200V, VGS=0 100 µA
VGS=±15V, VDS=0 ±10 µA

VDS=10V, ID=0.5A 0.4 0.8 S

min typ max

Marking : KS Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

20101 TS IM TA-1034

No.6916-1/4

2SK2951

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=20V , f=1MHz 60 pF
Output Capacitance Coss VDS=20V , f=1MHz 18 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 7 pF
Turn-ON Delay Time td(on) See specified Test Circuit 5 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 30 ns
Fall Time t
Diode Forward Voltage V

SD

See specified Test Circuit 10 ns

r

See specified Test Circuit 18 ns

f

IS=1A, VGS=0 1.0 1.5 V

min typ max

Switching Time Test Circuit

Ratings

Unit

IN

VDD=100V

D

ID=0.5A
RL=200Ω

V

OUT

V

10V

0V

PW=10µs
D.C.≤1%

IN

V

G

8V

ID -- V

6V

50Ω

5V

DS

S

2SK2951

=4V

V

GS

P.G

1.0

0.8

-- A
D

0.6

10V

20V

0.4

Drain Current, I

0.2

0

012345

Drain-to-Source V oltage, VDS -- V

6.0

5.5

5.0

4.5

4.0

(on) -- Ω

DS

3.5

3.0

2.5

2.0

1.5

1.0

Static Drain-to-Source

On-State Resistance, R

0.5
0

02468101214 2016 18

RDS(on) -- V

GS

Tc=25°C
ID=0.5A

Gate-to-Source V oltage, VGS -- V

ID -- V

2.0

1.8

1.6

1.4

-- A
D

1.2

1.0

0.8

0.6

Drain Current, I

0.4

0.2
0

IT02855 IT02856

IT02857

01234567 1089

6.0

5.5

5.0

4.5

4.0

(on) -- Ω

DS

3.5

3.0

2.5

2.0

1.5

1.0

Static Drain-to-Source

On-State Resistance, R

0.5
0

--60 --40 --20 0 20 40 60 80 100 120 160140

Gate-to-Source V oltage, VGS -- V

RDS(on) -- Tc

Case Temperature, Tc -- °C

GS

VDS=10V

75°C

Tc= --25°C

25°C

VGS=10V
ID=0.5A

IT02858

No.6916-2/4

10

7
5

3
2

1.0
7

5
3

2

0.1
7

5
3

2

Forward Transfer Admittance, yfs -- S

0.01
23 57 23 57 23 57

0.01 0.1 1.0 10

yfs -- I

Tc= --25°C

25°C

Drain Current, I

1000

Ciss, Coss, Crss -- pF

100

1.0

7
5

3
2

7
5

3
2

10

7
5

3
2

0

Ciss, Coss, Crss -- V

20 40 12010060 80

Drain-to-Source V oltage, V

10

I

=4A

5

DP

2

I

=1A

D

1.0

-- A
D

5

A S O

Ciss

Coss

Crss

75°C

D

D

10ms

-- A

1ms

DS

100µs

DS

-- V

10µs

DC operation

2

Operation in this

0.1

area is limited by RDS(on).

Drain Current, I

5

2

Tc=25°C
Single pulse

0.01
25

37 2 5

10

Drain-to-Source V oltage, V

5.0

4.5

-- W

4.0

D

3.5

3.0

2.5

2.0

1.5

1.0

0.5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

37 23

DS

100

-- V

PD -- Tc

Case Temperature, Tc -- °C

VDS=10V

IT02859

f=1MHz

IT02861

IT02900

IT02864

2SK2951

I

-- V

F

P

5

D

Tc=75°C

t

d

td(on)

-- Ta

SD

25°C

(off)

t

f

t

r

7

D

--25°C

SD

D

1.0

-- A

-- V

2

✕0.8mm)

10

7
5

3
2

1.0

-- A
F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01
0 0.1 0.2 0.3 0.4 1.10.5 0.6 0.7 0.8 0.9 1.0

Diode Forward V oltage, V

SW Time -- I

23

Switching Time, SW Time -- ns

100

7
5

3
2

10

7
5

3
2

1.0

0.1

Drain Current, I

2.0

1.8

-- W

1.6

D

1.5

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Mounted on a ceramic board(250mm

Ambient Temperature, Ta -- °C

VGS=0

IT02860

VDD=100V
VGS=10V

23

IT02862

IT02863

No.6916-3/4

2SK2951

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of February, 2001. Specifications and information herein are subject
to change without notice.

No.6916-4/4

PS