Datasheet 2SK2938-S, 2SK2938-L Datasheet (HIT)

2SK2938(L),2SK2938(S)

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-561B (Z)

3rd. Edition

Jun 1998

Features

• Low on-resistance

RDS =0.026 Ω typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

Outline

1. Gate

2. Drain

3. Source

4. Drain

1

2

3

4

1

2

3

4

LDPAK

G

D

S

2SK2938(L),2SK2938(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

60 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

25 A

Drain peak current I

D(pulse)

Note1

100 A

Body-drain diode reverse drain current I

DR

25 A

Avalanche current I

AP

Note3

20 A

Avalanche energy E

AR

Note3

34 mJ

Channel dissipation Pch

Note2

50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

2SK2938(L),2SK2938(S)

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

60——V I

D

= 10mA, VGS = 0

Gate to source breakdown voltage V

(BR)GSS

±20——V I

G

= ±100µA, VDS = 0

Gate to source leak current I

GSS

——±10 µAVGS = ±16V, VDS = 0

Zero gate voltege drain current I

DSS

——10µAVDS = 60 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

1.5 — 2.5 V ID = 1mA, VDS = 10V

Static drain to source on state R

DS(on)

— 0.026 0.034 Ω ID = 15A, VGS = 10V

Note4

resistance R

DS(on)

— 0.045 0.07 Ω ID = 15A, VGS = 4V

Note4

Forward transfer admittance |yfs|1117—S I

D

= 15A, VDS = 10V

Note4

Input capacitance Ciss — 740 — pF VDS = 10V
Output capacitance Coss — 380 — pF VGS = 0
Reverse transfer capacitance Crss — 140 — pF f = 1MHz
Turn-on delay time t

d(on)

— 10 — ns ID = 15A, VGS = 10V

Rise time t

r

— 160 — ns RL = 2Ω

Turn-off delay time t

d(off)

— 100 — ns

Fall time t

f

— 150 — ns

Body–drain diode forward voltage V

DF

— 0.95 — V IF = 25A, VGS = 0

Body–drain diode reverse
recovery time

t

rr

— 40 — ns IF = 25A, VGS = 0

diF/ dt =50A/µs

Note: 4. Pulse test

2SK2938(L),2SK2938(S)

4

Main Characteristics

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

80

60

40

20

0

50 100 150 200

50

40

30

20

10

0

246810

3.5 V

4 V

5 V

V = 3 V

GS

6 V

4.5 V

10 V

20

16

12

8

4

0

12345

Tc = 75°C

25°C

–25°C

V = 10 V
Pulse Test

DS

Maximum Safe Operation Area

200
100

50

10

20

5

1

2

0.5

0.2

0.1 0.3 1 3 10 30 100

Ta = 25 °C

1 ms

PW = 10 ms (1shot)

DC Operation (Tc = 25°C)

10 µs

100 µs

Operation in
this area is
limited by R

DS(on)

Pulse Test

2SK2938(L),2SK2938(S)

5

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Drain Current I (A)

D

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current I (A)

D

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance vs.

Drain Current

Drain to Source On State Resistance

R ( )

W

DS(on)

Static Drain to Source on State Resistance

R ( )

W

DS(on)

1.0

0.8

0.6

0.4

0.2

0

48

12

16 20

I = 15 A

D

5 A

10 A

0.1 1 100.2 5

0.5

0.02

0.05

0.01

20.5 5020

0.2

0.1

V = 4 V

GS

10 V

Pulse Test

0.10

0.08

0.06

0.04

0.02

–40 0 40 80 120 160

0

V = 4 V

GS

10 V

2, 5 A

10 A

2, 5, 10 A

Pulse Test

0.1 0.3 1 3 10 30 100

50

20

5

10

1

2

0.5

25 °C

Tc = –25 °C

75 °C

V = 10 V
Pulse Test

DS

Pulse Test

2SK2938(L),2SK2938(S)

6

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body–Drain Diode Reverse

Recovery Time

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs.
Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

0.1 0.3 1 3 10 30 100

1000

500

50

100

20
10

200

di / dt = 50 A / µs
V = 0, Ta = 25 °C

GS

01020304050

2000

5000

1000

100

200

500

10

20

50

V = 0
f = 1 MHz

GS

Ciss

Coss

Crss

100

80

60

40

20

0

20

16

12

8

4

8 16243240

0

I = 25 A

D

V

GS

V

DS

V = 50 V

25 V
10 V

DD

V = 50 V

25 V
10 V

DD

1000

300

30

100

3

10

1

0.1 0.3 1 3 10 30 100

V = 10 V, V = 3 0 V
PW = 5 µs, duty < 1 %

GS

DD

t

f

r

t

d(on)

t

d(off)

t

2SK2938(L),2SK2938(S)

7

Channel Temperature Tch (°C)

Repetitive Avalanche Energy E (mJ)

AR

Maximum Avalanche Energy vs.

Channel Temperature Derating

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Source to Drain Voltage

D. U. T

Rg

I
Monitor

AP

V
Monitor

DS

V

DD

50W

Vin
15 V

0

I

D

V

DS

I

AP

V

(BR)DSS

L

V

DD

E = • L • I •

2

1

V

V – V

AR

AP

DSS

DSS DD

2

Avalanche Test Circuit Avalanche Waveform

20

16

12

8

4

0

0.4 0.8 1.2 1.6 2.0

V = 0, –5 V

GS

10 V

5 V

Pulse Test

40

32

24

16

8

25 50 75 100 125 150

0

I = 20 A
V = 25 V
duty < 0.1 %
Rg > 50

AP

DD

W

2SK2938(L),2SK2938(S)

8

Vin Monitor

D.U.T.

Vin
10 V

R

L

V
= 30 V

DD

tr

td(on)

Vin

90%

90%

10%

10%

Vout

td(off)

Vout
Monitor

50W

90%

10%

t

f

3

1

0.3

0.1

0.03

0.01
10 µ

100 µ 1 m 10 m

100 m 1 10

DM

P

PW

T

D =

PW

T

ch – c(t) = s (t) • ch – c
ch – c = 2.5 °C/W, Tc = 25 °C

q g q
q

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Switching Time Test Circuit

Waveform

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermao Impedance

s (t)

g

2SK2938(L),2SK2938(S)

9

Package Dimentions

Unit: mm

10.2 ± 0.3
(1.4)

8.6 ± 0.3

1.27 ± 0.2

1.2 ± 0.2

2.54 ± 0.5

11.3 ± 0.5

(1.5)

0.86

+0.2
–0.1

3.0

+0.3

–0.5

0.76 ± 0.1

10.0

+0.3

–0.5

2.54 ± 0.5

4.44 ± 0.2

1.3 ± 0.2

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

10.2 ± 0.3
(1.4)

8.6 ± 0.3

1.27 ± 0.2

2.54 ± 0.5

(1.5)

0.86

+0.2
–0.1

10.0

+0.3

–0.5

2.54 ± 0.5

4.44 ± 0.2

1.3 ± 0.2

2.59 ± 0.2

0.4 ± 0.1

1.2 ± 0.2

(1.5)

0.1

+0.2
–0.1

L type S type

Hitachi Code

EIAJ

JEDEC

LDPAK

—
—

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