Datasheet 2SK2935 Datasheet (HIT)

2SK2935

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

RDS =0.020 Ω typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

Outline

ADE-208-558B (Z)

3rd. Edition

Jun 1998

TO–220CFM

G

D

1

2

3

S

1. Gate

2. Drain

3. Source

2SK2935

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note3

AP

Note3

AR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

60 V
±20 V
35 A
140 A
35 A
35 A
105 mJ
30 W

2

2SK2935

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

DS(on)

60——V I
±20——V I
——±10 µAVGS = ±16V, VDS = 0
——10µAVDS = 60 V, VGS = 0

1.5 — 2.5 V ID = 1mA, VDS = 10V
— 0.020 0.026 Ω ID = 15A, VGS = 10V

— 0.032 0.050 Ω ID = 15A, VGS = 4V
Forward transfer admittance |yfs|1423—S ID = 15A, VDS = 10V
Input capacitance Ciss — 1100 — pF VDS = 10V
Output capacitance Coss — 540 — pF VGS = 0
Reverse transfer capacitance Crss — 200 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

— 15 — ns ID = 15A, VGS = 10V

— 180 — ns RL = 2Ω

— 175 — ns

— 195 — ns

— 0.95 — V IF = 35A, VGS = 0

— 40 — ns IF = 35A, VGS = 0
recovery time

Note: 4. Pulse test

= 10mA, VGS = 0

D

= ±100µA, VDS = 0

G

diF/ dt =50A/µs

Note4

Note4

Note4

3

2SK2935

Main Characteristics

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

50

40

10 V

6 V

4.5 V

5 V

D

30

20

Drain Current I (A)

10

Pulse Test

4 V

3.5 V

V = 3 V

GS

200

Maximum Safe Operation Area

100

50

D

20

PW = 10 ms (1shot)

DC Operation (Tc = 25°C)

100 µs

1 ms

10

5

Operation in

2

Drain Current I (A)

this area is

1

limited by R

DS(on)

0.5
Ta = 25 °C

0.2

0.1 0.3 1 3 10 30 100
Drain to Source Voltage V (V)

Typical Transfer Characteristics

50

V = 10 V

DS

Pulse Test

40

D

30

Tc = 75°C

20

Drain Current I (A)

10

10 µs

DS

25°C

–25°C

0

246810

Drain to Source Voltage V (V)

DS

0

12345

Gate to Source Voltage V (V)

GS

4

2SK2935

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

1.0

Pulse Test

0.8

DS(on)

V (V)

0.6

I = 20A

0.4

D

10 A

0.2
5 A

Drain to Source Saturation Voltage

0

48

Gate to Source Voltage V (V)

12

16 20

GS

Static Drain to Source on State Resistance

vs. Temperature

0.10

W

Pulse Test

0.08

DS(on)

R ( )

0.06

0.04

V = 4 V

GS

0.02

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

10 V

20 A

5,10 A

5, 10,20 A

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Drain Current

0.5

Pulse Test

W

0.2

DS(on)

0.1

R ( )

0.05

V = 4 V

GS

10 V

0.02

Drain to Source On State Resistance

0.01

0.1 3 100.3

1

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

50

fs

20

Tc = –25 °C

10

5

75 °C

2

1

Forward Transfer Admittance |y | (S)

0.5

V = 10 V

DS

Pulse Test

0.1 0.3 1 3 10 30 100
Drain Current I (A)

D

10030

25 °C

5

2SK2935

Body–Drain Diode Reverse

1000

Recovery Time

di / dt = 50 A / µs

500

V = 0, Ta = 25 °C

GS

200
100

50

20

Reverse Recovery Time trr (ns)

10

0.1 0.3 1 3 10 30 100
Reverse Drain Current I (A)

Dynamic Input Characteristics

100

I = 35 A

D

V = 50 V

DS

80

60

V

DS

V

GS

DD

40

20

Drain to Source Voltage V (V)

0

V = 50 V

DD

25 V
10 V

20 40 60 80 100

Gate Charge Qg (nc)

DR

25 V
10 V

Typical Capacitance vs.

5000

Drain to Source Voltage

2000

1000

500
200

100

Capacitance C (pF)

50

V = 0

20

GS

f = 1 MHz

10

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

20

16

GS

1000

300

100

t

d(off)
t

f

12

30

8

10

Switching Time t (ns)

4

Gate to Source Voltage V (V)

0

3

1

0.1 0.3 1 3 10 30 100
Drain Current I (A)

Ciss

Coss

Crss

DS

t

r

t

d(on)

V = 10 V, V = 3 0 V

GS

DD

PW = 5 µs, duty < 1 %

D

6

2SK2935

Reverse Drain Current vs.

Source to Drain Voltage

50

40

30

10 V

5 V

V = 0, –5 V

GS

DR

20

10

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Avalanche Test Circuit

Pulse Test

SD

Maximum Avalanche Energy vs.

Channel Temperature Derating

125

I = 35 A

AR

100

AP

V = 25 V

DD

duty < 0.1 %
Rg > 50

W

75

50

25

0

Repetitive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

Avalanche Waveform

Vin
15 V

V

DS

Monitor

Rg

50W

L

I

AP

Monitor

D. U. T

V

1

E = • L • I •

AR

2

I

AP

V

DD

I

D

V

DD

0

AP

2

DSS

V – V

DSS DD

V

DS

V

(BR)DSS

7

2SK2935

3

s (t)

1

g

0.3

0.1

D = 1

0.5

0.2

0.1

Normalized Transient Thermal Impedance vs. Pulse Width

q g q

ch – c(t) = s (t) • ch – c

q

ch – c = 4.17 °C/W, Tc = 25 °C

Tc = 25°C

0.05

0.03

Normalized Transient Thermal Impedance

0.01
10 µ

0.02

0.01

1shot pulse

100 µ 1 m 10 m

Pulse Width PW (S)

Switching Time Test Circuit

Vin Monitor

Vout
Monitor

D.U.T.

R

L

V

Vin
10 V

50W

DD

= 30 V

P

DM

PW

T

D =

100 m 1 10

Waveform

Vin

Vout

10%

10%

PW

T

90%

10%

td(on)

90%

tr

90%

td(off)

t

f

8

Package Dimentions

2SK2935

Unit: mm

1.0 ± 0.2

1.15 ± 0.2

0.6 ± 0.1

2.54 ± 0.5

10.0 ± 0.3

f

3.2 ± 0.2

4.1 ± 0.3 12.0 ± 0.3

2.54 ± 0.5

4.5 ± 0.3

2.5 ± 0.2

2.7 ± 0.2

15.0 ± 0.3

13.6 ± 1.0

0.7 ± 0.1

Hitachi Code

EIAJ

JEDEC

TO–220CFM

—
—

9

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