Datasheet 2SK2929 Datasheet (HIT)

2SK2929

e

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

RDS =0.026 Ω typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

Outline

ADE-208-552C (Z)

4th. Edition

Jun 1998

TO–220AB

G

D

1

2

S

1. Gate

2. Drain(Flang

3. Source

3

2SK2929

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note3

AP

Note3

AR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

60 V
±20 V
25 A
100 A
25 A
20 A
34 mJ
50 W

2

2SK2929

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

DS(on)

60——V I
±20——V I
——±10 µAVGS = ±16V, VDS = 0
——10µAVDS = 60 V, VGS = 0

1.5 — 2.5 V ID = 1mA, VDS = 10V
— 0.026 0.034 Ω ID = 15A, VGS = 10V

— 0.045 0.07 Ω ID = 15A, VGS = 4V
Forward transfer admittance |yfs|1117—S ID = 15A, VDS = 10V
Input capacitance Ciss — 740 — pF VDS = 10V
Output capacitance Coss — 380 — pF VGS = 0
Reverse transfer capacitance Crss — 140 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

— 10 — ns ID = 15A, VGS = 10V

— 160 — ns RL = 2Ω

— 100 — ns

— 150 — ns

— 0.95 — V IF = 25A, VGS = 0

— 40 — ns IF = 25A, VGS = 0
recovery time

Note: 4. Pulse test

= 10mA, VGS = 0

D

= ±100µA, VDS = 0

G

diF/ dt =50A/µs

Note4

Note4

Note4

3

2SK2929

Main Characteristics

80

Power vs. Temperature Derating

60

40

20

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

50

Typical Output Characteristics

10 V

6 V

40

5 V

Pulse Test

200

Maximum Safe Operation Area

100

100 µs

50

D

20

PW = 10 ms (1shot)

DC Operation (Tc = 25°C)

1 ms

10

5

Operation in

2
1

this area is
limited by R

DS(on)

Drain Current I (A)

0.5
Ta = 25 °C

0.2

0.1 0.3 1 3 10 30 100
Drain to Source Voltage V (V)

Typical Transfer Characteristics

20

V = 10 V

DS

Pulse Test

16

10 µs

DS

D

30

20

Drain Current I (A)

10

0

Drain to Source Voltage V (V)

4

4.5 V
4 V

3.5 V

V = 3 V

GS

246810

DS

D

12

8

Drain Current I (A)

4

0

Tc = 75°C

12345

Gate to Source Voltage V (V)

25°C

–25°C

GS

2SK2929

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

1.0
Pulse Test

0.8

DS(on)

V (V)

0.6

I = 15 A

0.4

D

0.2

Drain to Source Saturation Voltage

0

48

12

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

0.10

W

vs. Temperature

Pulse Test

0.08

DS(on)

R ( )

0.06
V = 4 V

GS

0.04

0.02

10 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

10 A

5 A

16 20

GS

10 A

2, 5 A

2, 5, 10 A

Static Drain to Source on State Resistance

vs. Drain Current

0.5

W

0.2

DS(on)

0.1

R ( )

0.05

V = 4 V

Pulse Test

GS

10 V

0.02

Drain to Source On State Resistance

0.01

0.1 1 100.2 5
Drain Current I (A)

20.5 5020

D

Forward Transfer Admittance vs.

50

fs

20

10

5

Drain Current

Tc = –25 °C

25 °C

75 °C

2

1

Forward Transfer Admittance |y | (S)

0.5

V = 10 V

DS

Pulse Test

0.1 0.3 1 3 10 30 100
Drain Current I (A)

D

5

2SK2929

Body–Drain Diode Reverse

Recovery Time

1000

di / dt = 50 A / µs

500

V = 0, Ta = 25 °C

GS

200

100

50

20

Reverse Recovery Time trr (ns)

10

0.1 0.3 1 3 10 30 100
Reverse Drain Current I (A)

Dynamic Input Characteristics

100

I = 25 A

D

DR

20

Typical Capacitance vs.
Drain to Source Voltage

5000

2000

1000

Ciss

500
200

Coss

100

Capacitance C (pF)

50

V = 0

20

GS

f = 1 MHz

10

Crss

01020304050

Drain to Source Voltage V (V)

DS

Switching Characteristics

1000

DS

80

V = 50 V

DD

25 V

60

V

DS

10 V

V

GS

40

20

Drain to Source Voltage V (V)

0

V = 50 V

DD

25 V
10 V

8 16243240

Gate Charge Qg (nc)

16

100

12

30

8

t

d(off)

t

f

t

r

300

GS

10

4

0

Switching Time t (ns)

3

Gate to Source Voltage V (V)

1

V = 10 V, V = 3 0 V
PW = 5 µs, duty < 1 %

0.1 0.3 1 3 10 30 100
Drain Current I (A)

t

GS

d(on)

DD

D

6

2SK2929

Reverse Drain Current vs.

Source to Drain Voltage

20

16

DR

10 V

12

8

5 V

V = 0, –5 V

GS

4

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Avalanche Test Circuit Avalanche Waveform

V

DS

Monitor

Rg

Vin
15 V

50W

Pulse Test

SD

L

I

AP

Monitor

D. U. T

Maximum Avalanche Energy vs.

Channel Temperature Derating

40

AR

32

24

16

8

0

Repetitive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

AR

1
2

I

AP

I

D

E = • L • I •

V

DD

V

DD

0

AP

2

I = 20 A

AP

V = 25 V

DD

duty < 0.1 %
Rg > 50

V – V

W

V

DSS

DSS DD

V

V

DS

(BR)DSS

7

2SK2929

3

1

0.3

0.1

0.03

Normalized Transient Thermal Impidance @ `

0.01
10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Normalized Transient THermal Impedance vs. Width

q g q

ch – c(t) = s (t) • ch – c

q

ch – c = 2.5 °C/W, Tc = 25 °C

P

DM

PW
T

100 µ 1 m 10 m

100 m 1 10

Pulse Width @PW (S)

Tc = 25°C

PW

D =

T

Switching Time Test Circuit

Vin Monitor

Vout
Monitor

D.U.T.

R

L

V

Vin
10 V

50W

DD

= 30 V

Vin

Vout

td(on)

10%

10%

Waveform

90%

tr

90%

td(off)

90%

10%

t

f

8

Package Dimentions

2SK2929

Unit: mm

2.79 ±0.2

1.27

18.5 ±0.57.8 ±0.5

1.2±0.1

2.54 ±0.5

10.16±0.2

9.5

8.0

1.27±0.1

1.5 max

0.76 ±0.1

2.54 ±0.5

f 3.6

+ 0.2

– 0.1

6.4

+ 0.1
– 0.08

15.0 ±0.3

0.5±0.1

14.0 ±0.5

2.7 max

4.44±0.2

1.26±0.15

Hitachi Code

EIAJ

JEDEC

TO–220AB

SC–46

—

9

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