Datasheet 2SK2928 Datasheet (HIT)

Features

e

• Low on-resistance

R

= 0.040Ω typ.

DS(on)

• 4V gate drive devices.

• High speed switching

Outline

2SK2928

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-551B (Z)

3rd. Edition

Jun 1998

TO–220AB

G

D

1

2

S

1. Gate

2. Drain(Flang

3. Source

3

2SK2928

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note3

AP

Note3

AR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Ta = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

60 V
±20 V
15 A
60 A
15 A
15 A
19 mJ
40 W

2

2SK2928

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current I
Gate to source leak current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

DSS

GSS

GS(off)

DS(on)

DS(on)

60——V I
±20——V I
——10µAVDS = 60 V, VGS = 0
——±10 µAVGS = ±16V, VDS = 0

1.5 — 2.5 V ID = 1mA, VDS = 10V
— 0.040 0.052 Ω ID = 8A, VGS = 10V

— 0.060 0.105 Ω ID = 8A, VGS = 4V
Forward transfer admittance |yfs| 7 11 — S ID = 8A, VDS = 10V
Input capacitance Ciss — 500 — pF VDS = 10V
Output capacitance Coss — 260 — pF VGS = 0
Reverse transfer capacitance Crss — 110 — pF f = 1MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse recovery

t

d(on)

r

d(off)

f

DF

rr

— 10 — ns VGS = 10V, ID = 8A

— 80 — ns RL = 3.75Ω

— 100 — ns

— 110 — ns

— 0.9 — V IF = 15A, VGS = 0

— 50 — ns IF = 15A, VGS = 0
time

Note: 4. Pulse test

= 10mA, VGS = 0

D

= ±100µA, VDS = 0

G

diF/ dt =50A/µs

Note4

Note4

Note4

3

2SK2928

Main Characteristics

Power vs. Temperature Derating

80

0

60

40

20

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

10 V

6 V 5 V

20

4 .5 V

16

4 V

Pulse Test

1000

Maximum Safe Operation Area

300
100

D

30
10

3
1

Operation in
this area is
limited by R

Ta = 25°C

Drain Current I (A)

0.3

0.1

0.1 0.3 1
Drain to Source Voltage V (V)

Typical Transfer Characteristics

20

V = 10 V

DS

Pulse Test

16

10 µs

10

100 µs

1 ms

30

DS

PW = 10 ms (1shot)

DC Operation (Tc = 25°C)

DS(on)

3

100

D

12

8

Drain Current I (A)

4

0

Drain to Source Voltage V (V)

4

3.5 V

3 V

V = 2.5 V

GS

246810

DS

D

12

8

Drain Current I (A)

4

0

Tc = 75°C

12345

Gate to Source Voltage V (V)

25°C

–25°C

GS

2SK2928

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

2.0

1.6

DS(on)

V (V)

1.2

0.8

0.4

Drain to Source Saturation Voltage

0

48

12

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

0.20
Pulse Test

W

0.16

DS(on)

R ( )

0.12

I = 10 A

D

Static Drain to Source on State Resistance

1.0

vs. Drain Current

Pulse Test

0.5

DS(on)

0.2

R ( )W

I = 20 A

D

0.1
V = 4 V

GS

0.05

10 A

5 A

0.02

Drain to Source On State Resistance

0.01

16 20 5 20 100110502

GS

Drain Current I (A)

Forward Transfer Admittance vs.

20

fs

5 A

10

5

Tc = –25 °C

Pulse Test

10 V

D

Drain Current

25 °C

V = 4 V

0.08

GS

0.04
10 V

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

2

5 A20 A 10 A

1

Forward Transfer Admittance |y | (S)

0.5

0.1 0.2 1 5

75 °C

V = 10 V

DS

Pulse Test

0.5 2

Drain Current I (A)

D

10

20

5

2SK2928

Body–Drain Diode Reverse

500

Recovery Time

di / dt = 50 A / µs
V = 0, Ta = 25 °C

200

GS

100

50

20

10

Reverse Recovery Time trr (ns)

5

0.1 0.5 1 2 100.2 5
Reverse Drain Current I (A)

Dynamic Input Characteristics

100

I = 15A

D

80

DS

60

V

DS

V

GS

V = 10 V

DD

40

20

Drain to Source Voltage V (V)

0

V = 50 V

DD

25 V
10 V

8 16 24 32 400

Gate Charge Qg (nc)

DR

25 V
50 V

Typical Capacitance vs.
Drain to Source Voltage

2000
1000

500

200
100

50

Capacitance C (pF)

20

V = 0

GS

f = 1 MHz

10

20

01020304050

Drain to Source Voltage V (V)

20

16

GS

1000

300

Switching Characteristics

100

12

30

8

10

4

Switching Time t (ns)

3

Gate to Source Voltage V (V)

0

1

0.1 0.2 1 5 10

Ciss

Coss

Crss

t

d(off)

t

f

t

r

t

d(on)

V = 10 V, V = 30 V

GS

DD

PW = 5 µs, duty < 1 %

0.5

Drain Current I (A)

2

D

DS

20

6

2SK2928

Reverse Drain Current vs.

Source to Drain Voltage

20

16

12

10 V

5 V

DR

8

4

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V (V)

Avalanche Test Circuit Avalanche Waveform

V

DS

Monitor

Rg

Vin
15 V

50W

V = 0, –5 V

GS

Pulse Test

SD

L

I

AP

Monitor

D. U. T

Maximun Avalanche Energy vs.

Channel Temperature Derating

25

I = 15 A

AR

20

AP

V = 25 V

DD

duty < 0.1 %
Rg > 50

W

15

10

5

0

Repetitive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

V

1

E = • L • I •

AR

2

I

AP

V

DD

I

D

V

DD

0

AP

2

DSS

V – V

DSS DD

V

DS

V

(BR)DSS

7

2SK2928

3

1

0.3

0.1

0.03

Normalized Transient Thermal Impidance @ `

0.01
10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Normalized Transient THermal Impedance vs. Width

q g q

ch – c(t) = s (t) • ch – c

q

ch – c = 3.12 °C/W, Tc = 25 °C

P

DM

PW

T

100 µ 1 m 10 m

100 m 1 10

Pulse Width @PW (S)

Tc = 25°C

PW

D =

T

Switching Time Test Circuit

Vin Monitor

Vout
Monitor

D.U.T.

R

L

V

Vin
10 V

50W

DD

= 30 V

Vin

Vout

td(on)

10%

10%

Waveform

90%

tr

90%

td(off)

90%

10%

t

f

8

Package Dimensions

2SK2928

Unit: mm

2.79 ±0.2

1.27

18.5 ±0.57.8 ±0.5

1.2±0.1

2.54 ±0.5

10.16±0.2

9.5

8.0

1.27±0.1

1.5 max

0.76 ±0.1

2.54 ±0.5

f 3.6

+ 0.2

– 0.1

6.4

+ 0.1
– 0.08

15.0 ±0.3

0.5±0.1

14.0 ±0.5

2.7 max

4.44±0.2

1.26±0.15

Hitachi Code

EIAJ

JEDEC

TO–220AB

SC–46

—

9

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