Datasheet 2SK2922 Datasheet (HIT)

2SK2922

Silicon N Channel MOS FET

UHF Power Amplifier

ADE-208-675(Z)

1st. Edition

Aug. 1998

Features

• High power output, High gain, High efficiency
PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz)

• Compact package capable of surface mounting

Outline

1

2

3

4

UPAK

1. Gate

2. Source

3. Drain

4. Source

This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.

2SK2922

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

10 V

Gate to source voltage V

GSS

±6V

Drain current I

D

0.7 A

Drain peak current I

D(pulse)

Note1

1.4 A

Channel dissipation Pch

Note2

3W
Channel temperature Tch 150 °C
Storage temperature Tstg –45 to +150 °C

Note: 1. PW ≤ 10ms, duty cycle ≤ 50 %

2. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Zero gate voltage drain current I

DSS

— — 100 µAVDS = 10 V, VGS = 0

Gate to source leak current I

GSS

——±5.0 µAVGS = ±6V, VDS = 0

Gate to source cutoff voltage V

GS(off)

0.4 — 1.2 V ID = 3mA, VDS = 5V
Input capacitance Ciss — 27 — pF VGS = 2V, VDS = 0, f = 1MHz
Output capacitance Coss — 13 — pF VDS = 5, VGS = 0, f = 1MHz
Output Power Pout 31 — — dBm VDS = 4.7V, f =836.5Mhz

Pin = 23dBm

Drain Rational ηD 57——%V

DS

= 4.7V, f =836.5Mhz

Pin = 23dBm

Note: 1. Marking is “HX”.

2SK2922

3

Main Characteristics

0

50 100 150 200

4

3

2

1

1.0

0.8

0.6

0.4

0.2

0

0.5 1.0 1.5 2.0 2.5

5

4

3

2

1

0

1

2345

6

5 V

6 V

Tc = –25°C

25°C
75°C

0.001

1

0.3

0.03

0.1

0.003 0.01 0.3 0.1 0.3 1

0.01

Channel Power Dissipation Pch (W)

Case Temperature Tc (°C)

Maximum Channel Power

Dissipation Curve

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Pulse Test

V = 5 V
Pulse Test

DS

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Drain Current I (A)

D

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance

vs. Drain Current

5.5 V

V = 1 V

GS

4.5 V
4 V

3.5 V
3 V

2.5 V
2 V

1.5 V

V = 5 V
Pulse Test

DS

Tc = –25°C

25°C

75°C

3

10

2SK2922

4

1.0

0.8

0.6

0.4

0.2

–25

0

0 25 50 75 100 125

–6

–4

–2 0 2 4 6

15

100

2

10

5

0.1 0.2 0.5 1 2 5 10

1

0.3

0.1

0.003

0.03

0.01

0.001

Tc = –25°C

25°C

75°C

1 mA

10 mA

I = 0.1 mA

D

V = 5 V

DS

35

30

25

20

20

50

1

V = 0
f = 1 MHz

GS

V = 0
f = 1 MHz

DS

Drain to Source Saturation Voltage

vs. Drain Current

Drain Current I (A)

D

Ambient Temperature Ta (°C)

Gate to Source Cutoff Voltage

Gate to Source Cutoff Voltage vs.

Ambient Temperature

GS(off)

GS

Input Capacitance vs.

Gate to Source Voltage

Gate to Source Voltage V (V)

Input Capacitance Ciss (pF)

DS

Drain to Source V (V)

Output Capacitance Coss (pF)

Drain to Source Saturation Voltage

DS(sat)

V (V)

V (V)

Output Capacitance vs.

Drain to Source Voltage

V = 6 V
Pulse Test

GS

0.01

0.03

0.1 0.3 10.001 0.003

2SK2922

5

2.5

2.0

1.5

1.0

0.5

0

100

80

60

40

20

0

500400300200100

V = 4.7 V
I = 150 mA
f = 836.5MHz

DS

DO

0.1 0.2 0.5 1 2 5 10

2

10

5

1

V = 0
f = 1 MHz

GS

Po

η

D

Output Power, Drain Rational

vs. Input Power

Output Power Po (W)

Input power Pin (mW)

Drain Rational (%)

η

D

Reverse Transfer Capacitance vs.

Drain to Gate Votage

Drain to Gate Voltege V (V)

Reverse Transfer Capacitance Crss (pF)

DG

2SK2922

6

Package Dimensions

Unit: mm

4.5 ± 0.1

1.8 max

1.5 ± 0.1

0.44 max

0.44 max

0.48 max

0.53 max

1.5

1.5

3.0

2.5 ± 0.1

4.25 max

0.8 min

φ

1.0

0.4

Hitachi Code

EIAJ

JEDEC

UPAK

SC–62

—

1

23

4

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo [phone] Fax: [phone]

Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: [phone]
Fax: [phone]

URL NorthAmerica : http:semiconductor.hitachi.com/

Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX

Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322

Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> [phone]
Fax: <1>[phone]

For further information write to: