Datasheet 2SK2826-ZJ, 2SK2826-S Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK2826

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.

FEATURES

• Super Low On-State Resistance

DS(on)1

R

= 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A)

DS(on)2

R

= 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A)

iss

• Low C

iss

: C

= 7200 pF (TYP.)

• Built-in Gate Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (V
Gate to Source Voltage (V

DS

= 0 V) V

DS

= 0 V) V

Drain Current (DC) I

Note1

Drain Current (Pulse)
Total Power Dissipation (T
Total Power Dissipation (T

C

= 25°C) P

A

= 25°C) P
Channel Temperature T
Storage Temperature T

Note2

Single Avalanche Current
Single Avalanche Energy

Note2

DSS

GSS(AC)

GSS(DC)

D(DC)

D(pulse)

I

T

T

ch

stg

AS

I

AS

E

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK2826

2SK2826-S

2SK2826-ZJ TO-263

60 V

±20 V

+20, –10 V

±70 A

±280 A

100 W

1.5 W

150 °C

–55 to + 150 °C

70 A

490 mJ

TO-220AB

TO-262

Notes 1.

PW ≤ 10

2.

Starting Tch = 25 °C, R

µ

s, Duty cycle ≤ 1 %

A

= 25 Ω, VGS = 20 V → 0 V

THERMAL RESISTANCE

Channel to Case Rth(ch-C) 1.25 °C/W
Channel to Ambient R

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D11273EJ2V0DS00 (2nd edition)
Date Published April 1999 NS CP(K)
Printed in Japan

th

(ch-A) 83.3 °C/W

The mark

••••

shows major revised points.

©

1998

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK2826

Drain to Source On-state Resi stance R

•

Gate to Source Cut-off Voltage V

DS(on)1VGS

DS(on)2VGS

R

GS(off)VDS

= 10 V, ID = 35 A 5.5 6.5 m
= 4.0 V, ID = 35 A 7.0 9.7 m

= 10 V, ID = 1 mA 1.0 1.5 2.0 V
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 35 A 20 94 S
Drain Leakage Current I
Gate to Source Leakage Current I
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t

•

Rise Time t

•

•

Turn-off Delay Time t

•

Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

DSS

VDS = 60 V, VGS = 0 V 10

GSS

VGS = ±20 V, VDS = 0 V ±10

iss

VDS = 10 V 7200 pF

oss

VGS = 0 V 2000 pF

rss

f = 1 MHz 700 pF

d(on)ID

d(off)

GS

GD

F(S-D)IF

rr

= 35 A 100 ns

r

GS(on)

V

= 10 V 1200 ns

VDD = 30 V 440 ns

f

RG = 10

G

ID = 70 A 150 nC

Ω

520 ns

VDD = 48 V 20 nC
VGS = 10 V 40 nC

= 70 A, VGS = 0 V 0.97 V

IF = 70 A, VGS = 0 V 80 ns

rr

di/dt = 100A/µ s 250 nC

Ω
Ω

A

µ

A

µ

TEST CIRCUIT 1 AVALANCHE CAPABILITY

VGS = 20V → 0 V

PG.

V

G

R

DD

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

V

DS

Starting T

L

DD

V

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

G

= 2 mA

PG.

I

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

PG.

V

GS

0

t

t = 1 µs
Duty Cycle ≤ 1 %

G

R

D.U.T.

R

G

= 10 Ω

V

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

10 %10

0

t

d(on)

V

90

%

I

trt

t

on

GS(on)

D

d(off)tf

%

90

90

%

%

t

off

L

R

V

DD

2

Data Sheet D11273EJ2V0DS00

TYPICAL CHARACTERISTICS (TA = 25 °C)

2SK2826

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

C - Case Temperature - ˚C

T

FORWARD BIAS SAFE OPERATING AREA

1000

I

D(pulse)

100

10

- Drain Current - A

D

I

1

0.1

Limited

DS(on)

R

(at VGS =10 V)

TC = 25

˚C

Single Pulse

DS -

V

I

D(DC)

Power Dissipation Limited

100 ms

DC

1 10 100

Drain to Source Voltage - V

10 ms

1 ms

PW = 10 µs

100 µs

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

140

120

100

80

60

40

- Total Power Dissipation - W

20

T

P

0

40 60 80 100 120 140 160

20

C

- Case Temperature - ˚C

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

100

80

60

V

GS

=10 V

40

- Drain Current - A

D

I

V

GS

= 4.0 V

20

0

0.2

DS

- Drain to Source Voltage - V

V

0.4

0.6

Pulsed

0.8

FORWARD TRANSFER CHARACTERISTICS

1000

100

10

- Drain Current - A

D

I

1

TA = -25˚C

25˚C
75˚C

125˚C

0

2

GS

- Gate to Source Voltage - V

V

4

Pulsed

V

DS

= 10 V

68

Data Sheet D11273EJ2V0DS00

3

1 000

100

10

2SK2826

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

Rth(ch-A) = 83.3 ˚C/W

1

0.1

0.01

- Transient Thermal Resistance - ˚C/W

th(t)

r

0.001

10 µ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

100 µ

100

VGS = 0V

10

1.0

| - Forward Transfer Admittance - S

fs

0.1

| y

0.1

1.0

I

D

- Drain Current - A

TA = 175˚C
75˚C
25˚C

-25˚C

Rth(ch-C) = 1.25 ˚C/W

Single Pulse

TC = 25

1 m 10 m 100 m 1 10 100 1 000

PW - Pulse Width - s

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

VDS=10V
Pulsed

30

20

10

- Drain to Source On-State Resistance - mΩ

10 100

DS(on)

R

0

10

V

GS

- Gate to Source Voltage - V

˚C

20 30

Pulsed

A

= 25˚C

T
ID = 35 A

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

30

20

Pulsed

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

2.0

1.5

VDS = 10 V
I

D

= 1 mA

1.0

10

- Drain to Source On-State Resistance - mΩ

0

DS(on)

R

4

V

GS

= 4.0 V

10

I

D

- Drain Current - A

V

GS

= 10 V

100 1000

0.5

- Gate to Source Cutoff Voltage - V

GS(off)

V

Data Sheet D11273EJ2V0DS00

0

- 50

0 50 100 150

T

ch

- Channel Temperature - ˚C

200

2SK2826

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

20

15

VGS = 4.0 V

10

5

0

- 50

RDS(on) - Drain to Source On-state Resistance - mΩ

0

T

ch - Channel Temperature - ˚C

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

VGS = 10 V

50

100 150

100 000

10 000

Ciss

Coss

1 000

Crss

Ciss, Coss, Crss - Capacitance - pF

100

0.1

1 10 100

V

DS - Drain to Source Voltage - V

I

D = 25 A

VGS = 0 V
f = 1 MHz

•

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

100

VGS = 10 V

10

VGS = 0 V

1

SD - Diode Forward Current - A

0.1

I

0

0.5

1.0

VSD - Source to Drain Voltage - V

SWITCHING CHARACTERISTICS

10 000

1 000

100

td(on), tr, td(off), tf - Switching Time - ns

10

0.1
I

110

D - Drain Current - A

td(on)

VDD = 30 V
VGS = 10 V
RG = 10 Ω

Pulsed

1.5

tr

tf

td(off)

100

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

1000

100

10

trr - Reverse Recovery Time - ns

1

0.1

1.0 10 100

I

F - Drain Current - A

di/dt = 100 A/µs

GS = 0 V

V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

80

60

40

20

VDS - Drain to Source Voltage - V

0

Data Sheet D11273EJ2V0DS00

VGS

VDD = 48 V

30 V
12 V

VDS

50 100 150 200

G - Gate Charge - nC

Q

8

6

4

2

VGS - Gate to Source Voltage - V

5

2SK2826

SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD

100

I

AS

= 70 A

10

1.0

V

DD

| - Single Avalanche Energy - mJ

AS

| I

10 µ

= 30 V

GS

= 20 V → 0 V

V

G

= 25 Ω

R

100 µ

- Inductive Load - H

L

E

AS

= 490 mJ

1 m 10 m

SINGLE AVALANCHE ENERGY
DERATING FACTOR

160
140

120

V

DD

R

G

= 25 Ω

V

GS

= 20 V → 0

AS

≤ 70 A

I

= 30 V

100

80
60
40

Energy Derating Factor - %

20

0

25 50

75 100

125 150

Starting Tch - Starting Channel Temperature - ˚C

V

6

Data Sheet D11273EJ2V0DS00

PACKAGE DRAWINGS (Unit : mm)

1)TO-220AB (MP-25) 2)TO-262 (MP-25 Fin Cut)

2SK2826

10.6 MAX.

10.0

3.0±0.3

4

1

1.3±0.2

0.75±0.1

2.54 TYP.

3)TO-263 (MP-25ZJ)

2 3

(10)

φ

2.54 TYP.

4

3.6±0.2

5.9 MIN.6.0 MAX.

15.5 MAX.12.7 MIN.

4.8 MAX.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

4.8 MAX.

1.3±0.2

2.8±0.2

1.3±0.2

1

1.3±0.2

0.75±0.3

2.54 TYP. 2.54 TYP.

EQUIVALENT CIRCUIT

(10)

4

2 3

1.0±0.5

8.5±0.2

12.7 MIN.

4.8 MAX.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1.3±0.2

2.8±0.2

1.0±0.5

1.4±0.2

0.7±0.2

2.54 TYP. 2.54 TYP.

123

Remark

The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

8.5±0.2

(0.5R)

5.7±0.4

2.8±0.2

(0.8R)

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.5±0.2

Gate

Gate
Protection
Diode

Drain

Body
Diode

Source

Data Sheet D11273EJ2V0DS00

7

2SK2826

• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.

• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.

• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.

• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.

M7 98. 8