Datasheet 2SK2685 Datasheet (HIT)

Application

UHF low noise amplifier

Features

• Excellent low noise characteristics.

Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz)

• High associated gain.

Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz)

• High voltage.

VDS = 6 or more voltage.

• Small package. (CMPAK-4)

2SK2685

GaAs HEMT

ADE-208-400

1st. Edition

Outline

CMPAK–4

2

3

1

4

1. Source

2. Gate

3. Source

4. Drain

2SK2685

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Gate to drain voltage V
Drain current I

DSS

GSO

GDO

D

Channel power dissipation Pch 100 mW
Channel temperature Tch 125 °C
Storage temperature Tstg –55 to +125 °C

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Gate to source leak current I
Gate to source cutoff voltage V
Drain current I

GSS

GS(off)

DSS

Forward transfer admittance |yfs| 40 60 — mS VDS = 3 V, ID = 10 mA,

Associated gain Ga — 17.0 — dB VDS = 3 V, ID = 10 mA,

Associated gain Ga — 15.2 — dB VDS = 3 V, ID = 3 mA,

Associated gain Ga 16 21.4 — dB VDS = 3 V, ID = 10 mA,

Associated gain Ga — 19.7 — dB VDS = 3 V, ID = 3 mA,

Minimum noise figure Fmin — 0.83 — dB VDS = 3 V, ID = 10 mA,

Minimum noise figure Fmin — 1.08 — dB VDS = 3 V, ID = 3 mA,

Minimum noise figure Fmin — 0.52 1.0 dB VDS = 3 V, ID = 10 mA,

Minimum noise figure Fmin — 0.74 — dB VDS = 3 V, ID = 3 mA,

Note: Marking is “ZT–”.

— — –20 µAVGS = –6 V, VDS = 0
–0.3 — –2.0 V VDS = 3 V, ID = 100 µA
35 50 70 mA VDS = 3 V, VGS = 0

6V
–6 V
–7 V
20 mA

(Pulse Test)

f = 1 kHz

f = 2 GHz

f = 2 GHz

f = 900 MHz

f = 900 MHz

f = 2 GHz

f = 2 GHz

f = 900 MHz

f = 900 MHz

2

2SK2685

Maximum Channel Power

Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0 20015010050

Ambient Temperature Ta (°C)

Typical Transfer Characteristics

100

80

VDS = 3 V
Pulse Test

20

Typical Output Characteristics

–0.4 V

16

(mA)

D

12

8

–0.3 V

–0.1 V

–0.5 V

Pulse Test

–0.6 V

–0.7 V

Drain Current I

4

–0.8 V

VGS = –0.9 V

0 12345

Drain to Source Voltage V

DS

(V)

Forward Transfer Admittance vs.

Gate to Source Voltage

100

VDS = 3 V
Pulse Test

80

(mA)

D

60

40

Drain Current I

20

–2.0

–1.6 –1.2 –0.8 –0.4 0

Gate to Source Voltage V

GS

(V)

60

40

20

Forward Transfer Admittance yfs (mS)

0

–2.0 –1.6 –1.2 –0.8 –0.4 0

Gate to Source Voltage V

GS

(V)

3

2SK2685

Forward Transfer Admittance vs.

Drain Current

100

V

= 3 V

DS

Pulse Test

80

60

40

20

Forward Transfer Admittance yfs (mS)

0

4 8 12 16 20

Drain Current I

D

Minimum Noise Figure vs. Drain Current

3

2

(mA)

30

Associated Gain vs. Drain Current

f = 900 MHz

20

3 V

1 V

3 V

V

= 1 V

DS

f = 2 GHz

10

Associated Gain Ga (dB)

0 102030

Drain Current ID (mA)

Associated Gain vs. Drain to Source Voltage

30

f = 900 MHz

20

= 1 V

DS

1

Minimum Noise Figure Fmin (dB)

f = 2 GHz

f = 900 MHz

V

1 V

3 V

3 V

0 102030

Drain Current I

(mA)

D

2 GHz

10

Associated Gain Ga (dB)

ID = 10 mA

0 246810

Drain to Source Voltage V

DS

(V)

4

2SK2685

Minimum Noise Figure vs.

3.0

2.0

1.0

Minimum Noise Figure Fmin (dB)

0 246810

Drain to Source Voltage

ID = 10 mA

2 GHz

f = 900 MHz

Drain to Source Voltage VDS (V)

Isolation vs. Drain Current

50

40

30

50

40

30

20

10

Isolation S21 – S12 (dB)

0 102030

V

= 1 V

DS

Isolation vs. Drain Current

Drain Current ID (mA)

3 V

3 V

f = 900 MHz

V

= 1 V

DS

20

10

Isolation S21 – S12 (dB)

0102030

Drain Current ID (mA)

f = 2 GHz

5

2SK2685

0.2

0

–0.2

180°

S11 Parameter vs. Frequency

1

0.8

0.6

0.4

0.2 0.4 0.6 0.8 2 3 45 101.0 1.5

–0.4

–0.6

–0.8

–1

Condition : ID = 10 mA, Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(V
(V

DS
DS

= 1 V)
= 3 V)

S21 Parameter vs. Frequency

90°

120°

150°

1.5

–1.5

2

3

4

5

–5

–4

–3

–2

Scale : 2/div.

60°

10

∞

–10

30°

S12 Parameter vs. Frequency

90

°

Scale : 0.02/div.

60

°

30°

0°

–30°

–60°

180°

–150°

150°

120

–120°

°

–90°

Condition : ID = 10 mA, Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(V
(V

DS
DS

= 1 V)
= 3 V)

S22 Parameter vs. Frequency

0.6

0.8

1.5
2

1

0.4
3

4

0.2

5

10

0°

0

0.2 0.4 0.6 0.8 2 3 45 101.0 1.5

∞

–10

–150°

–120°

–90°

–60°

Condition : ID = 10 mA, Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(V
(V

= 1 V)

DS

= 3 V)

DS

–30°

–0.2

–0.4

–0.6

–0.8

–1

–1.5

Condition : ID = 10 mA, Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(V
(V

DS
DS

= 1 V)
= 3 V)

–2

–3

–4

–5

6

2SK2685

S Parameter (VDS = 1 V, ID = 10 mA, ZO = 50 )

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

200 0.996 –4.8 5.12 175.8 0.00691 89.8 0.688 –3.2
400 0.980 –9.5 5.13 169.9 0.0143 88.2 0.682 –6.5
600 0.977 –15.0 5.07 165.4 0.0210 83.3 0.674 –10.6
800 0.970 –19.9 4.94 161.6 0.0276 81.5 0.668 –13.8
1000 0.952 –24.4 4.84 156.5 0.0399 79.3 0.658 –17.2
1200 0.938 –29.2 4.74 152.7 0.0404 76.0 0.648 –20.7
1400 0.916 –34.0 4.67 147.7 0.0462 74.8 0.636 –23.7
1600 0.896 –38.2 4.55 144.1 0.0523 73.1 0.622 –27.1
1800 0.882 –42.9 4.47 140.0 0.0578 72.0 0.611 –29.9
2000 0.859 –47.1 4.36 135.8 0.0630 70.3 0.597 –33.1

S Parameter (VDS = 3 V, ID = 10 mA, ZO = 50 Ω)

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

200 0.998 –4.0 5.13 175.8 0.00581 89.8 0.802 –3.2
400 0.988 –9.2 5.14 170.1 0.0110 85.5 0.796 –6.5
600 0.978 –14.5 5.08 165.2 0.0163 83.3 0.790 –9.8
800 0.968 –19.4 4.95 161.4 0.0216 82.0 0.783 –13.3
1000 0.953 –24.2 4.85 156.4 0.0363 79.2 0.774 –16.4
1200 0.937 –28.7 4.75 152.5 0.0312 76.5 0.764 –19.4
1400 0.917 –33.3 4.68 147.8 0.0358 75.3 0.753 –22.5
1600 0.900 –37.5 4.57 144.0 0.0401 73.2 0.742 –25.4
1800 0.883 –41.9 4.49 140.1 0.0442 72.8 0.731 –28.1
2000 0.858 –46.1 4.37 135.9 0.0477 71.4 0.718 –31.1

7

0.3

0.3

+ 0.1
– 0.05

+ 0.1
– 0.05

2.0 ± 0.2

1.3 ± 0.2

0.65

0.65

0.65

0.6

1.25 ± 0.2

0.3

0.4

+ 0.1
– 0.05

+ 0.1
– 0.05

0.2

0.9 ± 0.1

0.425

1.25 ± 0.1

0.425

2.1 ± 0.3

0.16

0 – 0.1

+ 0.1
– 0.06

Unit: mm

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

CMPAK-4(T)
—
Conforms

0.006 g

Datasheet Title

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning.
If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then
consult a physician without delay.

2. Disposal of this product must be handled, separately from other general refuse, by a specialist
processing contractor in the same way as dangerous items.

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Datasheet Title

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